Zobrazeno 1 - 10
of 34
pro vyhledávání: '"S.I. Vlaskina"'
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 3, Pp 344-348 (2017)
The luminescence spectra of SiC crystals and films with grain boundaries (GB) on the atomic level were observed. The GB spectra are associated with luminescence centers localized in areas of specific structural abnormalities in the crystal, without n
Externí odkaz:
https://doaj.org/article/426fe099f1d746eabeb9c804cfb544d6
Autor:
S.I. Vlaskina
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 19, Iss 3, Pp 273-278 (2016)
Nanocrystalline silicon carbide (nc-SiC) films as protective coating and as solar cell material for a harsh environment, high temperatures, light intensities and radiation, were investigated. p- and n-types 100-mm silicon wafers with (100) orientatio
Externí odkaz:
https://doaj.org/article/57f52bdcdb6c43a0a07092043329f5f3
Autor:
S.I. Vlaskina
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 19, Iss 1, Pp 62-66 (2016)
Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigate
Externí odkaz:
https://doaj.org/article/75280b8afb7c4bf5a0c4adbb43893cf2
Autor:
S.U. Yuldashev, O.S. Lytvyn, V. S. Khomchenko, S.I. Vlaskina, Mazin, P.V. Demydiuk, V. E. Rodionov
Publikováno v:
Nanoscience and Nanoengineering. 4:46-51
The ZnO films were prepared by reactive rf-magnetron sputtering on silicon and sapphire substrates. For Cu-doping of the ZnO films, the close space sublimation method (CSS) was used at atmospheric pressure in air. After CSS processing, the ZnO and Zn
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects
Autor:
S.I. Vlaskina
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 17:380-383
Phase transformations of SiC crystals and thin films with in-grown original defects have been studied. The analysis of absorption, excitation and low-temperature photoluminescence spectra testifies to formation of new micro-phases during the growth.
Autor:
S.I. Vlaskina
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 17:155-159
Autor:
S.I. Vlaskina
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 16:273-279
Autor:
S.I. Vlaskina
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 16:132-135
Publikováno v:
Semiconductor physics, quantum electronics and optoelectronics. 12:173-177
The reliability of AC thick-film EL devices has been studied. The AC thick- film EL devices were fabricated by Novatech Inc. using the industrial print screen technology. The analysis of reasons for failure has been proposed. The dependence of EL lam
Autor:
S.I. Vlaskina
Publikováno v:
Semiconductor physics, quantum electronics and optoelectronics. 10:21-25