Zobrazeno 1 - 10
of 144
pro vyhledávání: '"S.I. Long"'
Autor:
Jingshi Yao, S.I. Long
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 53:763-767
Linear amplification with nonlinear components (LINC) using a nonisolating combiner has the potential for high efficiency and good linearity. In past work, the interaction between two power amplifiers has been interpreted as a time-varying load prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e569ee8efb56ee48af7ed3a84e4906c8
https://doi.org/10.1109/tcsii.2006.876384
https://doi.org/10.1109/tcsii.2006.876384
Publikováno v:
IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications. 50:1556-1559
In this brief, the contribution of transistor feedback capacitance to the total output capacitance in Class-E power amplifiers is analyzed. It is shown that the feedback capacitance loads the output of the transistor by its nominal value plus an amou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::188503f1f5f9effbfee32ceae7092616
https://doi.org/10.1109/tcsi.2003.819815
https://doi.org/10.1109/tcsi.2003.819815
Autor:
S.I. Long, J.Q. Zhang
Publikováno v:
IEEE Journal of Solid-State Circuits. 32:890-897
A new GaAs current-mode (CM) chip-to-chip interconnection circuit is presented that provides high signal transfer speed with a 50 /spl Omega/ active termination and reduced input voltage swing. The power dissipation is shown to be 1/8 of an ECL I/O a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1647253c93d9570761e0a4e660b79927
https://doi.org/10.1109/4.585291
https://doi.org/10.1109/4.585291
Publikováno v:
IEEE Journal of Solid-State Circuits. 30:580-585
GaAs Two-Phase Dynamic FET Logic (TDFL) circuits are capable of extremely low power dissipation (20 nW/MHz/gate), high speed (1 GHz), and are compatible with static GaAs logic families. This paper demonstrates that TDFL can be modified to execute two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::783bab58be803e78a060a6736f45beea
https://doi.org/10.1109/4.384171
https://doi.org/10.1109/4.384171
Publikováno v:
IEEE Journal of Solid-State Circuits. 27:1364-1371
An extremely low-power, high-density GaAs logic family is described. Two-phase dynamic FET logic (TDFL) provides all the standard logic functions (NOT, NAND, NOR), and it operates from two nonoverlapping clocks and a single supply. TDFL gates are sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd461b257a406d8df32eb9ca9c2d9d47
https://doi.org/10.1109/4.156439
https://doi.org/10.1109/4.156439
Publikováno v:
IEEE Transactions on Circuits and Systems. 37:1201-1208
The construction of time-domain solutions by the superposition of modes is explained for the general case, which may not have any symmetry in the lines or terminations. This simplified method requires that the logic-gate terminal impedances be approx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::039be2c88e0f892d6503da68ae970366
https://doi.org/10.1109/31.103215
https://doi.org/10.1109/31.103215
Publikováno v:
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9de8019206168d02057d0be20a14a2b
https://doi.org/10.1109/cornel.1987.721237
https://doi.org/10.1109/cornel.1987.721237
Publikováno v:
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::540a37966535854ab7637fa737b97397
https://doi.org/10.1109/cornel.1987.721225
https://doi.org/10.1109/cornel.1987.721225
Publikováno v:
MTT-S International Microwave Symposium Digest.
A new approach to the design and fabrication of planar high speed GaAs integrated circuits is described. Experimental digital circuits of MSI level complexities have been fabricated showing high gate density, low dynamic switching energies and very h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91dbd393d7cb8ae2e051363b1d3c64ef
https://doi.org/10.1109/mwsym.1979.1124120
https://doi.org/10.1109/mwsym.1979.1124120
Autor:
R.J. Hamilton, S.I. Long
Publikováno v:
MTT-S International Microwave Symposium Digest.
Amplifier evaluations in the 30 to 45 GHz frequency range have yielded device noise figures below 9 dB with up to 5 dB associated gain. Other reaults and a device model in close agreement with measured impedances are presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2677b26d22ce414adef4943b6b62554c
https://doi.org/10.1109/mwsym.1977.1124349
https://doi.org/10.1109/mwsym.1977.1124349