Zobrazeno 1 - 10
of 514
pro vyhledávání: '"S.H. Ku"'
Autor:
Kuang-Chao Chen, Wen-Jer Tsai, T.W. Lin, W. P. Lu, Ti-Wen Chen, T.C. Lu, S.H. Ku, Chih-Yuan Lu, C.W. Lee, Tahui Wang, C.H. Cheng
Publikováno v:
2018 IEEE International Memory Workshop (IMW).
Endurance of floating gate flash memories at 19nm node and beyond is studied comprehensively. Experiments reveal that the random telegraph noise (RTN) would degrade the read margin with a tail, which quickly reshapes into a symmetric Gaussian form in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14518f27765fdcdcc72a0047588eaf83
https://doi.org/10.1109/imw.2018.8388829
https://doi.org/10.1109/imw.2018.8388829
Autor:
Haidurov, Alexander1 (AUTHOR) haiduroa@tcd.ie, Budanov, Andrei V.1 (AUTHOR) haiduroa@tcd.ie
Publikováno v:
Cells (2073-4409). Sep2024, Vol. 13 Issue 18, p1587. 19p.
Autor:
Y.W. Chang, K.C. Chen, L. Liu, N.K. Zous, T.C. Lu, S.H. Ku, S.W. Huang, I.J. Huang, A. Suzuki, W.P. Lu, C.H. Cheng, K.W. Wu, C.W. Lee
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e39a03e1dee0793d40567883961341e8
https://doi.org/10.7567/ssdm.2015.k-7-4
https://doi.org/10.7567/ssdm.2015.k-7-4
Autor:
W.P. Lu, M. S. Chen, S W Huang, G D Lee, S.H. Ku, Chih-Yuan Lu, C H Tsai, N K Zous, W C Tzeng, Kuang-Chao Chen, K W Liu, T.F. Ou, C H Liu
Publikováno v:
IEEE Electron Device Letters. 32:734-736
A variety of cell performances, such as program speed, second-bit effect, program disturbance along the channel direction (X-disturbance), and random telegraph noise (RTN), are investigated extensively under different junction dosages in a virtual-gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03b1616fb51236a726c45e1d30651f76
https://doi.org/10.1109/led.2011.2134064
https://doi.org/10.1109/led.2011.2134064
Autor:
Yun-Yan Chung, S.H. Ku, Chih-Yuan Lu, N.K. Zou, V. Chen, Kuang-Chao Chen, Tahui Wang, W.P. Lu, Yu-Che Chou
Publikováno v:
IEEE Electron Device Letters. 32:458-460
Discrete nitride program charge loss in a small-area SONOS Flash memory cell during retention is observed. Our measurement shows that a retention Vt of a programmed SONOS cell exhibits a stepwise evolution with retention time. Individual single-progr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::231eadf43dad94c6c5a2383e68cb52ae
https://doi.org/10.1109/led.2011.2109031
https://doi.org/10.1109/led.2011.2109031
Autor:
Chih-Yuan Lu, Tahui Wang, S.H. Ku, H.C. Ma, J.P. Chiu, Kuang-Chao Chen, N.K. Zou, V. Chen, Yu-Che Chou, W.P. Lu
Publikováno v:
IEEE Electron Device Letters. 30:1188-1190
Program-charge effects in a SONOS Flash cell on the amplitude of random telegraph noise (RTN) are investigated. We measure RTN in 45 planar SONOS cells and 40 floating-gate (FG) cells in erase state and program state, respectively. We find that a SON
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46bcc7bea8b9f1e87a852f947687f472
https://doi.org/10.1109/led.2009.2030589
https://doi.org/10.1109/led.2009.2030589
Akademický článek
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Autor:
Christopher S. Putnam, K. Duncan, Lawrence F. Wagner, Yue Liang, Sungjae Lee, Anthony I. Chou, Y. Deng, Murshed M. Chowdhury, Kai Zhao, Brian Johnson, Brian J. Greene, William K. Henson, Rainer Thoma, Dustin K. Slisher, R. Rupani, Scott K. Springer, J. Johnson, D. Daley, C. Wermer, Jean-Olivier Plouchart, Edward P. Maciejewski, Y. Wang, Jie Deng, Hongmei Li, Amit Kumar, Jai-Hoon Sim, Paul A. Hyde, Richard Q. Williams, S.H. Ku, A. Sutton, Shreesh Narasimha, Daeik Daniel Kim
Publikováno v:
2012 Symposium on VLSI Technology (VLSIT).
We demonstrate advanced modeling and optimization of 32nm high-K metal gate (HKMG) SOI CMOS technology for high-speed digital and RF/analog system-on-chip applications. To enable high-performance RF/analog circuit design, we present challenging devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0856e026fef8b67a3ab657c495e22e07
https://doi.org/10.1109/vlsit.2012.6242498
https://doi.org/10.1109/vlsit.2012.6242498
Autor:
Kalasariya, Haresh S.1,2 hareshahir22@gmail.com, Maya-Ramírez, Carlos Eliel3 emayar1800@alumno.ipn.mx, Cotas, João4 jcotas@uc.pt, Pereira, Leonel4 leonel.pereira@uc.pt
Publikováno v:
Phycology. Jun2024, Vol. 4 Issue 2, p276-313. 38p.
Autor:
S.H. Ku, K. F. Chen, Chih-Yuan Lu, I. J. Huang, L. H. Chong, C. H. Lee, Tahui Wang, N.K. Zous, T. T. Han, C. H. Cheng, Chienying Lee, M. S. Chen, W. P. Lu, J. S. Huang, Kuang-Chao Chen, Y. J. Chen
Publikováno v:
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.
Reliability issues including random telegraph noise (RTN) and program disturbance in floating gate (FG) NAND strings for different junction dosages are compared. Although the initial threshold voltage (V T ) distributions are similar for various sour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b896981d637dbef1ab8c2a219a8a4c62
https://doi.org/10.1109/vtsa.2011.5872269
https://doi.org/10.1109/vtsa.2011.5872269