Zobrazeno 1 - 10
of 16
pro vyhledávání: '"S.H. Goodwin-Johansson"'
Publikováno v:
Journal of Microelectromechanical Systems. 4:139-150
Integrated force arrays (IFAs) are a novel means of microelectromechanical actuation. They are membranes that consist of thousands of micron-scale deformable capacitors and are capable of contraction and force exertion in one dimension by application
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56097cd8d354b7cdfed5703d6d65f815
https://doi.org/10.1109/84.465121
https://doi.org/10.1109/84.465121
Publikováno v:
Applied Physics Letters. 65:728-730
We report the porous nature of electron‐beam evaporated silicon on the sidewalls of metal‐oxide‐semiconductor field‐effect transistor (MOSFET) gate spacers. This property was used to develop and fabricate submicron elevated source/drain MOSFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7be65201361948f5e299b10bdb563c9d
https://doi.org/10.1063/1.113014
https://doi.org/10.1063/1.113014
Autor:
S.H. Goodwin-Johansson, J.E. Bousaba, Farid M. Tranjan, B.W. Dudley, S.K. Jones, J.D. Jacobson, M.D. Kellam, Stephen M. Bobbio, T.D. DuBois
Publikováno v:
1994 Proceedings. 44th Electronic Components and Technology Conference.
Integrated Force Arrays (IFAs) are membrane based actuators that are made of polyimide material. They are metallized membranes that are flexible enough to undergo substantial deformation when a voltage is applied. IFAs can be patterned using the tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb4c250d928467ad8e45c2fd868e1576
https://doi.org/10.1109/ectc.1994.367530
https://doi.org/10.1109/ectc.1994.367530
Publikováno v:
Electronics Letters. 30:1631-1632
A novel subquarter-micrometre MOSFET with a selfaligned source and drain structure is proposed with elevated sources and drains formed by using polysilicon spacers. The spacers can reduce the effective channel length by 50% compared to the mask lengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82887923e4253c25321e401b0b7f92bf
https://doi.org/10.1049/el:19941068
https://doi.org/10.1049/el:19941068
Publikováno v:
Electronics Letters. 33:1183
A self-aligned MOSFET structure with elevated source and drain was fabricated using electron beam evaporation of silicon. This technology allows the realisation of defect-free junctions as shallow as 200 /spl Aring/ without preamorphisation, source/d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc7f4e8bd8915edef59ab7eebbf5cfaa
https://doi.org/10.1049/el:19970776
https://doi.org/10.1049/el:19970776
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:247
Two‐dimensional doping profiles can be determined from multiple one‐dimensional secondary ion mass spectroscopy (SIMS) profiles using computed tomography techniques. The chemical nature of SIMS enables the measurement of both as‐implanted and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4cd16be1862362f06e043b20b062b98
https://doi.org/10.1116/1.587148
https://doi.org/10.1116/1.587148
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:116
Knowledge of the lateral or spatial distribution of doping impurities is important for accurate process and device simulations of submicrometer silicon devices, since the edge effects of the electric fields can no longer be neglected. A newly develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37b1afe820a876d3a4d9ab2b2c03f5a6
https://doi.org/10.1116/1.587167
https://doi.org/10.1116/1.587167
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:369
Two‐dimensional doping profiles can be determined from multiple one‐dimensional secondary ion mass spectrometry (SIMS) profiles using computed tomography techniques. The chemical nature of SIMS enables the measurement of both as‐implanted and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5def2f617e9715eee92a10d5b30b0089
https://doi.org/10.1116/1.586360
https://doi.org/10.1116/1.586360
Autor:
Mark Kellam, S.H. Goodwin-Johansson, John Russ, Richard C. Chapman, Gary E. McGuire, Kevin Kjoller
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:502
Scanning tunneling microscopy (STM) is an electrically sensitive technique with atomic resolution, making it a viable candidate for use in shallow junction delineation. It has been demonstrated that STM can be used to distinguish between n‐ and p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f66123d8a584aeec342a65e77ee7dc85
https://doi.org/10.1116/1.586383
https://doi.org/10.1116/1.586383
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 8:323-335
A technique for the determination of two-dimensional impurity profiles in silicon using methods for emission computed tomography is presented. Several one-dimensional impurity profiles obtained for different directions through the sample are used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f6a3ad3be32a1d0b67acb3a9e81a0f1
https://doi.org/10.1109/43.29587
https://doi.org/10.1109/43.29587