Zobrazeno 1 - 10 of 47 pro vyhledávání: '"S.G. Jahn"'
1
Alpha-emission channeling investigations of the lattice location of Li in Ge
Autor: Ulrich Wahl, H. Quintel, Hans Hofsäss, K BharuthRam, Carsten Ronning, S.G. Jahn, M. Restle
Publikováno v: Scopus-Elsevier
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 118(1-4), 76-81. ELSEVIER SCIENCE BV
CIÊNCIAVITAE
The alpha-emission channeling and blocking technique is a direct method for lattice site determination of radioactive atoms in single crystals. Position-sensitive detection of emitted alpha-particles provides an efficient means of carrying out such e
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f3575d675f20bea9c2a007450a9d453
https://doi.org/10.1016/0168-583x(95)01196-x
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2
Defect recovery of ion-implanted CdTe
Autor: A. Burchard, Robert Magerle, S.G. Jahn, Manfred Deicher, J. Freidinger
Publikováno v: Journal of Crystal Growth. 161:128-133
The defect recovery of Bridgman and MBE grown CdTe implanted with In and Cd ions (E = 60-350 keV) has been studied using the perturbed γγ angular correlation technique (PAC) sensitive to defects present in the immediate neighborhood of the implante
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::93a7635dc2271d305336866a1efeaae3
https://doi.org/10.1016/0022-0248(95)00621-4
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3
α-emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystals
Autor: Hugo Pattyn, H. Hofsäss, S.G. Jahn, André Vantomme, Guido Langouche, M. Restle, J. De Wachter, Mats Lindroos, Ulrich Wahl, P. Van Duppen, R Moons, S Blasser
Publikováno v: Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 106(1-4), 23-27. ELSEVIER SCIENCE BV
Scopus-Elsevier
The lattice site occupation of oversized atoms, implanted in Ni and Fe at 60, 180 and 293 K has been studied extensively using the α-emission channeling technique. Low dose (
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77b10d97349fd1a73fae04e9e2493032
https://doi.org/10.1016/0168-583X(95)00671-0
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6
Lattice Sites of Li in Si and Ge
Autor: M. Restle, Ulrich Wahl, S.G. Jahn, Hans Hofsäss, H. Quintel
Publikováno v: Materials Science Forum. :115-120
The lattice sites of ion implanted Li-8 in Si and Ge were studied using the alpha-emission channeling technique. In both materials tetrahedral interstitial sites were found to be the major occupied lattice sites following room temperature implantatio
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::de6bace2c38c897fe82e6c1fb1627712
https://doi.org/10.4028/www.scientific.net/msf.196-201.115
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7
Impurity lattice location and recovery of structural defects in semiconductors studied by emission channeling
Autor: Ulrich Wahl, Hans Hofsäss, S.G. Jahn
Publikováno v: Hyperfine Interactions. 84:27-41
Doping of semiconductors by ion implantation usually requires implantation doses below 1013 cm−2 to obtain typical impurity concentrations of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::406e3e34ba81bf010211dbb5505bbd80
https://doi.org/10.1007/bf02060641
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8
Lattice sites of ion implanted Li in indium antimonide
Autor: Ulrich Wahl, Ekkehard Recknagel, Carsten Ronning, S.G. Jahn, M. Restle, Hans Hofsäss
Publikováno v: Scopus-Elsevier
CIÊNCIAVITAE
We have studied the interaction of Li and implantation defects using the emission channeling technique after implantation of 60 keV 8Li ions into n- and p-InSb. Emission channeling patterns of α-particles emitted in the nuclear decay of 8Li ( t 1 2
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ecd64c8b0235967955565947b15bcb1
https://doi.org/10.1016/0168-583x(94)95865-3
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9
Structural defect recovery in GaP after heavy ion implantation
Autor: Ekkehard Recknagel, S. Winter, S.G. Jahn, Ulrich Wahl, Hans Hofsäss
Publikováno v: Scopus-Elsevier
The channeling and blocking effect of electrons and positrons emitted in nuclear decay allows the lattice site location of radioactive impurities implanted into single crystals at small concentrations (ppm) and low implantation fluences (1012/cm2). W
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38badfa1bece2fdf9d46c0c2b1bc1d24
https://doi.org/10.1016/0169-4332(91)90158-g
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