Zobrazeno 1 - 10
of 181
pro vyhledávání: '"S.G. Chamberlain"'
Publikováno v:
IEEE Journal of Oceanic Engineering. 33:1-54
The IEEE oceanic engineering society (OES) has completed forty years of active engagement: the initial eight years in the form of the oceanography coordinating committee (OCC), followed by seven years as the council of oceanic engineering (COE), then
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b7760397fb1f2ae66f641b09d23e722
https://doi.org/10.1109/joe.2008.923545
https://doi.org/10.1109/joe.2008.923545
Autor:
S.G. Chamberlain, Prasad S. Gudem
Publikováno v:
IEEE Transactions on Electron Devices. 42:1333-1339
Numerical simulation of amorphous silicon phototransistors using the conventional trap distribution model is shown to give drain-to-source currents lower than experimentally reported values by about a factor of ten. Several attempts to optimize the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c3f1777d252d3168d0af427ebfe9428
https://doi.org/10.1109/16.391218
https://doi.org/10.1109/16.391218
Autor:
M.J. Van der Tol, S.G. Chamberlain
Publikováno v:
IEEE Transactions on Electron Devices. 40:741-749
In the literature, it is unclear whether or not buried-channel (BC) MOSFETs are less resistant to drain-induced barrier lowering than surface-channel MOSFETs. The authors clarify this confusion and experimentally demonstrate the relationship between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f4f3379242ce23e76c7097295fc3208
https://doi.org/10.1109/16.202786
https://doi.org/10.1109/16.202786
Akademický článek
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Autor:
S.G. Chamberlain, J.R.F. McMacken
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 11:629-637
A model based on a linearized solution of the Shockley-Read-Hall trapping expressions is presented. It allows these equations to be eliminated from the system matrix. This results in significantly reduced memory requirements and execution times. To i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3472ebfd07e03466e5c1616339f77ef
https://doi.org/10.1109/43.127624
https://doi.org/10.1109/43.127624
Autor:
S.G. Chamberlain, C.R. Smith
Publikováno v:
IEEE Transactions on Electron Devices. 39:864-873
The authors present a theory, a design methodology, and a transient simulator for a silicon single-phase CCD. The time-varying distribution of the surface hole charge is derived and an expression for maximum bias transition rate is established. The n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f46d976ee4b702402d29402d643219af
https://doi.org/10.1109/16.127477
https://doi.org/10.1109/16.127477
Autor:
S.G. Chamberlain, M.J. Van der Tol
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 10:1015-1035
A buried-channel (BC) MOSFET model for DC, transient and small-signal circuit simulation, which has been incorporated into SPICE 3B1, is presented. The model includes all of the modes of operation inherent to the BC-MOSFET, including the partial mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de3ba6f5fc1f3fce10b7341eb69b761d
https://doi.org/10.1109/43.85739
https://doi.org/10.1109/43.85739
Autor:
J.R.F. McMacken, S.G. Chamberlain
Publikováno v:
IEEE Journal of Solid-State Circuits. 25:1257-1267
Analytic and iterative transit-time models for both long-and short-channel MOSFETs are developed. The derivation is based on common compact IC drain-current models such as BSIM; thus, the short-channel expressions can account for effects such as velo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64fdf2edc0bf5bd72ff48ee93acbc0d4
https://doi.org/10.1109/4.62150
https://doi.org/10.1109/4.62150
Publikováno v:
Proceedings of 1994 IEEE International Electron Devices Meeting.
In this paper we concentrate on large format CCD Image Sensors of a million or more pixels. We review the state of the art of mega sensors and also highlight the present challenges and technical issues. The second part of our paper deals with our dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::060ff52bb4252765fc064938fc4b931c
https://doi.org/10.1109/iedm.1994.383317
https://doi.org/10.1109/iedm.1994.383317
Publikováno v:
[1991] Proceedings Fourth Annual IEEE International ASIC Conference and Exhibit.
Discusses the design considerations involved in the practical application of the wide dynamic range photodetector technology to a spectrum analyzer intended for use in a Radar Electronic Support Measures (RESM) system. A 128 element photodetector arr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dc1c0ce6cd226ef1e180d596913875c
https://doi.org/10.1109/asic.1991.242940
https://doi.org/10.1109/asic.1991.242940