Zobrazeno 1 - 10
of 32
pro vyhledávání: '"S.D. Calawa"'
Autor:
L.J. Mahoney, R. H. Mathews, C.L. Chen, J.P. Sage, T.C.L.G. Sollner, P.A. Maki, C. D. Parker, S.D. Calawa, K.M. Molvar
Publikováno v:
Solid-State Electronics. 44:1853-1856
Monolithic resonant-tunneling-diode (RTD) relaxation oscillators are fabricated. The highest repetition rate of this pulse generator is 6.7 GHz with a pulse width of approximately 60 ps. Oscillators with an RTD connected to an off-chip transmission l
Autor:
Chang-Lee Chen, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner, R. H. Mathews, L.J. Mahoney, K.M. Molvar
Publikováno v:
Proceedings of the IEEE. 87:596-605
We describe a new family of clocked logic gates based on the resonant-tunneling diode (RTD). Pairs of RTDs form storage latches, and these are connected by networks consisting of field-effect transistors (FETs), saturated resistors, and RTDs. The des
Autor:
A. Napoleone, Steven H. Groves, L.J. Mahoney, E.K. Duerr, S.D. Calawa, Douglas C. Oakley, D. C. Shaver, K.M. Molvar, Joseph P. Donnelly, K. A. McIntosh
Publikováno v:
Applied Physics Letters. 81:2505-2507
Geiger-mode (photon-counting) operation at 1.06 μm has been demonstrated with InGaAsP/InP avalanche photodiodes operated at room temperature. A photon detection efficiency of 33% was measured on uncoated detectors, representing an internal avalanche
Autor:
R. H. Mathews, C. L. Chen, L.J. Mahoney, K.M. Molvar, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner
Publikováno v:
Applied Physics Letters. 74:4058-4060
Device-quality layers were regrown on GaAs wafers by molecular-beam epitaxy over conductive pregrown areas and on selectively patterned high-resistivity areas formed by oxygen implantation. The regrowth over both areas resulted in comparable device-q
Publikováno v:
Applied Physics Letters. 73:3824-3826
A general technique has been demonstrated at microwave and submillimeter-wave frequencies for photoconductive sampling in the frequency domain using photomixers and continuous-wave laser diodes. A microwave version in which two photomixers were coupl
Autor:
L.J. Mahoney, R. H. Mathews, C.L. Chen, K.M. Molvar, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner
Publikováno v:
IEEE Electron Device Letters. 19:478-480
A novel technique of integrating resonant-tunneling diodes (RTDs) with pseudomorphic high-electron-mobility transistors (pHEMTs) is demonstrated. A proton was implanted through the pHEMT layers to convert the RTD structure underneath to a high-resist
Autor:
Michael J. Manfra, L.J. Mahoney, George W. Turner, E.K. Duerr, K.A. Mclntosh, Joseph P. Donnelly, Douglas C. Oakley, K.M. Molvar, J.M. Mahan, Richard J. Molnar, A. Napoleone, S.D. Calawa, B.F. Aull
Publikováno v:
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..
In this paper, InGaAsP/InP APDs is designed for detection of near infrared (1-1.5 /spl mu/m wavelength) light and GaN APDs designed for detection of ultraviolet (
Autor:
Douglas C. Oakley, Joseph P. Donnelly, S.D. Calawa, L.J. Mahoney, D. C. Shaver, E.K. Duerr, A. Napoleone, K. A. McIntosh, K.M. Molvar
Publikováno v:
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society.
InGaAsP/InP Geiger-mode avalanche photodiodes (APDs) have been demonstrated with low dark count rates and high photon sensitivity at 1.06 /spl mu/m. APD arrays can be operated with a common bias voltage with excellent uniformity of response and dark
Autor:
R. Blundell, Robert Kimberk, E.K. Duerr, Cheuk-yu Edward Tong, S.D. Calawa, K. A. McIntosh, S.M. Duffy, Simon Verghese
Publikováno v:
1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
We report the first successful demonstration of a photomixer local oscillator (LO) integrated with a superconducting heterodyne detector. The photomixer LO generated the difference frequency of two diode lasers by optical heterodyne conversion in low
Publikováno v:
Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088).
Summary form only given. We believe we report the first demonstration of high-power GaInSb-InAs type-II QW lasers incorporating GaInAsSb absorber layers. To ensure good carrier transport from the absorber layers to the active wells, the absorber laye