Grain Boundary Characterisation in Sequentially Laterally Solidified Polycrystalline-Silicon Thin Film Transistors

Autor: S.D. Brotherton, Antonio Valletta, Matteo Rapisarda, Luigi Mariucci, Guglielmo Fortunato, A. Bonfiglietti, Alessandro Pecora

Publikováno v: ECS Transactions. 8:211-216

An unambiguous characterisation of the polycrystalline-Si grain boundary behaviour has been obtained by studying thin film transistors, TFTs, realized on sequentially lateral solidified, SLS, material. The grain boundary, GB, carrier trapping has bee

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::484d1c4ef96aeb7ac3865ef79b93341b
https://doi.org/10.1149/1.2767310

Analysis of electrical characteristics of gate overlapped lightly doped drain (GOLDD) polysilicon thin-film transistors with different LDD doping concentration

Autor: Luigi Mariucci, J.R. Ayres, A. Bonfiglietti, Guglielmo Fortunato, Antonio Valletta, Alessandro Pecora, Massimo Cuscunà, S.D. Brotherton

Publikováno v: IEEE Transactions on Electron Devices. 50:2425-2433

Different drain field architectures have been recently investigated to reduce field-enhanced effects in conventional self-aligned polysilicon thin-film transistor (TFT) architecture, induced by the intense electric fields at the drain junction. Among

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1377341dd28f8e3e98c88d0a8d18e5b1
https://doi.org/10.1109/ted.2003.819250

Short Channel effects and drain field relief architectures in polysilicon TFTs

Autor: Antonio Valletta, Luca Maiolo, M. Cuscunà, Alessandro Pecora, Matteo Rapisarda, Luigi Mariucci, S.D. Brotherton, Guglielmo Fortunato

Publikováno v: ECS transactions 37 (2011): 3–14. doi:10.1149/1.3600718
info:cnr-pdr/source/autori:Fortunato, Guglielmo; Cuscunà, Massimo; Maiolo, Luca; Mariucci, Luigi; Rapisarda, Matteo; Pecora, Alessandro; Valletta, Antonio; Brotherton, Stan D./titolo:Short Channel effects and drain field relief architectures in polysilicon TFTs/doi:10.1149%2F1.3600718/rivista:ECS transactions/anno:2011/pagina_da:3/pagina_a:14/intervallo_pagine:3–14/volume:37

Applications of polycrystalline silicon (polysilicon) thin film transistors (TFTs) to active matrix organic light emitting displays require further performance improvement. The biggest leverage in circuit performance can be obtained by reducing chann

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::824abc9ad4063b95874a5c7e2d7be6ba
http://www.scopus.com/record/display.url?eid=2-s2.0-84856822021&origin=inward

Excimer Laser Crystallisation of Poly-Si TFTs for AMLCDs

Autor: S.D. Brotherton, Carole Anne Fisher, John R. A. Ayres, Frank W. Rohlfing, J. P. Gowers, David J. Mcculloch

Publikováno v: MRS Proceedings. 621

There is interest in reducing the shot number in the poly-Si laser crystallisation process in order to improve its throughput. Two distinct shot number dependent effects have been identified, which are both laser intensity dependent. The critical las

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::482a633df75bcd86183d9ed77aa04fb3
https://doi.org/10.1557/proc-621-q7.1.1

Influence of Excimer Laser Beam Shape on Poly-Si Crystallisation

Autor: S.D. Brotherton, David J. Mcculloch, J. P. Gowers

Publikováno v: Japanese Journal of Applied Physics. 43:5114

Excimer laser crystallization is the currently preferred technique for the fabrication of high performance poly-Si thin film transistors for use in active matrix displays with integrated drive circuits. One of the issues with this process is the trad

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::83a08edf56d6f9f617f6058cbcf0e250
https://doi.org/10.1143/jjap.43.5114