Zobrazeno 1 - 10
of 131
pro vyhledávání: '"S.C. Binari"'
Publikováno v:
International Journal of Heat and Mass Transfer. 50:4767-4779
Experiments on removing high heat fluxes from GaN-on-SiC semiconductor dies using microchannel coolers are described. The dies contain an AlGaN/GaN heterostructure operated as a direct current resistor, providing a localized heat source. The active d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f8587deafd5aab3146561f37243336a
https://doi.org/10.1016/j.ijheatmasstransfer.2007.03.013
https://doi.org/10.1016/j.ijheatmasstransfer.2007.03.013
Publikováno v:
IEEE Transactions on Components and Packaging Technologies. 28:797-809
This paper presents finite-element thermo-mechanical simulation studies of microchannel-based techniques to cool AlGaN/GaN high electron mobility rf transistors grown on SiC substrates. A number of problems are considered, including standard thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d32ee3ff1e0e1199ad3ae2df9f54340
https://doi.org/10.1109/tcapt.2005.848584
https://doi.org/10.1109/tcapt.2005.848584
Publikováno v:
Proceedings of the IEEE. 90:1048-1058
It is well known that trapping effects can limit the output power performance of microwave field-effect transistors (FETs). This is particularly true for the wide bandgap devices. In this paper we review the various trapping phenomena observed in SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aea6a3b9f1aa442c51543e170a5200c
https://doi.org/10.1109/jproc.2002.1021569
https://doi.org/10.1109/jproc.2002.1021569
Autor:
Mario G. Ancona, S.C. Binari
Publikováno v:
2011 International Conference on Simulation of Semiconductor Processes and Devices.
As a tool for studying the critical issue of reliability in GaN HEMTs we develop a multi-dimensional device simulator based on a continuum formulation in which the electrical, mechanical, thermal and transport variables are fully coupled. The new sim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa8c195482b3680b2688a3047dfb5503
https://doi.org/10.1109/sispad.2011.6035062
https://doi.org/10.1109/sispad.2011.6035062
Publikováno v:
Conference Proceedings Southeastcon '81..
Millimeter wave Schottky barrier mixer diodes are extremely important devices for radio astronomy. The performance of the Schottky diodes depends largely on the characteristics and quality of the GaAs epitaxial materials used. Systematic manipulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb4fe8e726033e0764ffc5b5a6095413
https://doi.org/10.1109/secon.1981.673570
https://doi.org/10.1109/secon.1981.673570
Publikováno v:
2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).
It is well known that trapping effects can limit the output power performance of microwave field-effect transistors. This is particularly true for the wide-bandgap devices. In this paper, we review the various trapping phenomena observed in SiC and G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ffb6e39b7c76c697c5d52729102aa8f
https://doi.org/10.1109/mwsym.2002.1012217
https://doi.org/10.1109/mwsym.2002.1012217
Autor:
S.C. Binari
Publikováno v:
1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
There is an extensive effort to develop GaN and the related alloys for electronic device applications. The primary focus is the development of microwave power devices, and in this area, AlGaN/GaN HEMTs have demonstrated record output power densities.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57e190a7bd554779763d9b64b98fa2f7
https://doi.org/10.1109/mwsym.1999.779575
https://doi.org/10.1109/mwsym.1999.779575
Publikováno v:
1988., IEEE MTT-S International Microwave Symposium Digest.
A lateral InP transferred-electron device structure was investigated and its application to millimeter-wave monolithic integrated circuits (MMICs) was demonstrated. The discrete devices were tested in a tunable waveguide cavity. These tests showed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ba1159b9904aba18f1765abcb3aee5f
https://doi.org/10.1109/mwsym.1988.22124
https://doi.org/10.1109/mwsym.1988.22124
Autor:
H. Dietrich, W. Jones, Raed Sabbah, K. Ikossi-Anastasiou, C. S. Kyono, W. Kruppa, N. Valsaraj, S.C. Binari
Publikováno v:
Proceedings of 28th Southeastern Symposium on System Theory.
The performance of Heterojunction Bipolar Transistors (HBTs) fabricated on novel quaternary InAlGaAs/InGaAs structures grown lattice matched on InP substrates are presented. For the first time the measured pulsed current voltage characteristics on In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aae284048f9ce7f6aa1b992d7989bce
https://doi.org/10.1109/ssst.1996.493528
https://doi.org/10.1109/ssst.1996.493528
Publikováno v:
Electronics Letters. 27:2265
Vertical pin diodes were fabricated using MeV Si/S coimplantation and keV Be/P coimplantalion into undoped semi-insulaling GaAs to obtain buried n+and surface p + regions, respectively. An exploratory device with a 500×500 μm 2 junction area and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b47cc627781e66a138e0781f51e8b74
https://doi.org/10.1049/el:19911401
https://doi.org/10.1049/el:19911401