Design and Testing of the Front-End Electronics of WCDA in LHAASO

Autor: F. Aharonian, Q. An, null Axikegu, L.X. Bai, Y.X. Bai, Y.W. Bao, D. Bastieri, X.J. Bi, Y.J. Bi, H. Cai, J.T. Cai, Z. Cao, J. Chang, J.F. Chang, X.C. Chang, B.M. Chen, J. Chen, L. Chen, M.J. Chen, M.L. Chen, Q.H. Chen, S.H. Chen, S.Z. Chen, T.L. Chen, X.L. Chen, Y. Chen, N. Cheng, Y.D. Cheng, S.W. Cui, X.H. Cui, Y.D. Cui, B.Z. Dai, H.L. Dai, Z.G. Dai, null Danzengluobu, R.S. Dong, X.J. Dong, J.H. Fan, Y.Z. Fan, Z.X. Fan, J. Fang, K. Fang, C.F. Feng, L. Feng, S.H. Feng, Y.L. Feng, B. Gao, C.D. Gao, Q. Gao, W. Gao, M.M. Ge, L.S. Geng, G.H. Gong, Q.B. Gou, J.L. Gu, M.H. Gu, J.G. Guo, X.L. Guo, Y.Q. Guo, Y.Y. Guo, Y.A. Han, H.H. He, H.N. He, J.C. He, S.L. He, X.B. He, Y. He, Z.Q. He, M. Heller, Y.K. Hor, C. Hou, X. Hou, H.B. Hu, S. Hu, S.C. Hu, X.J. Hu, D.H. Huang, Q.L. Huang, W.H. Huang, X.T. Huang, Z.C. Huang, F. Ji, X.L. Ji, H.Y. Jia, K. Jiang, Z.J. Jiang, C. Jin, D. Kuleshov, K. Levochkin, B.B. Li, C. Li, F. Li, H.B. Li, H.C. Li, H.Y. Li, J. Li, K. Li, W.L. Li, X. Li, X.R. Li, Y. Li, Y.Z. Li, Z. Li, E.W. Liang, Y.F. Liang, S.J. Lin, B. Liu, C. Liu, D. Liu, H. Liu, H.D. Liu, J. Liu, J.L. Liu, J.S. Liu, J.Y. Liu, M.Y. Liu, R.Y. Liu, S.M. Liu, W. Liu, Y.N. Liu, Z.X. Liu, W.J. Long, R. Lu, H.K. Lv, B.Q. Ma, L.L. Ma, X.H. Ma, J.R. Mao, A. Masood, W. Mitthumsiri, T. Montaruli, Y.C. Nan, B.Y. Pang, P. Pattarakijwanich, Z.Y. Pei, B.D. Piazzoli, M.Y. Qi, J.J. Qin, D. Ruffolo, V. Rulev, A. Saiz, L. Shao, O. Shchegolev, X.D. Sheng, J.R. Shi, C.X. Song, H.C. Song, Yu. V. Stenkin, V. Stepanov, Q.N. Sun, X.N. Sun, Z.B. Sun, P.H.T. Tam, Z.B. Tang, W.W. Tian, D. della Volpe, B.D. Wang, C. Wang, H. Wang, H.G. Wang, J.C. Wang, J.S. Wang, L.P. Wang, L.Y. Wang, R.N. Wang, W. Wang, X.G. Wang, X.J. Wang, X.Y. Wang, Y.D. Wang, Y.J. Wang, Y.P. Wang, Z. Wang, Z.H. Wang, Z.X. Wang, D.M. Wei, J.J. Wei, Y.J. Wei, T. Wen, C.Y. Wu, H.R. Wu, S. Wu, W.X. Wu, X.F. Wu, S.Q. Xi, J. Xia, J.J. Xia, G.M. Xiang, G. Xiao, H.B. Xiao, G.G. Xin, Y.L. Xin, Y. Xing, D.L. Xu, R.X. Xu, L. Xue, D.H. Yan, X.B. Yan, C.W. Yang, F.F. Yang, J.Y. Yang, L.L. Yang, M.J. Yang, R.Z. Yang, S.B. Yang, Y.H. Yao, Z.G. Yao, Y.M. Ye, L.Q. Yin, N. Yin, X.H. You, Z.Y. You, Y.H. Yu, Q. Yuan, H.D. Zeng, T.X. Zeng, W. Zeng, Z.K. Zeng, M. Zha, X.X. Zhai, B.B. Zhang, H.M. Zhang, H.Y. Zhang, J.L. Zhang, J.W. Zhang, L. Zhang, L.X. Zhang, P.F. Zhang, P.P. Zhang, R. Zhang, S.R. Zhang, S.S. Zhang, X. Zhang, X.P. Zhang, Y. Zhang, Y.F. Zhang, Y.L. Zhang, B. Zhao, J. Zhao, L. Zhao, L.Z. Zhao, S.P. Zhao, F. Zheng, Y. Zheng, B. Zhou, H. Zhou, J.N. Zhou, P. Zhou, R. Zhou, S.Z. Zhou, X.X. Zhou, C.G. Zhu, F.R. Zhu, H. Zhu, K.J. Zhu, X. Zuo

Publikováno v: IEEE Transactions on Nuclear Science. 68:2257-2267

Water Cherenkov detector array (WCDA) is one of the key parts of the Large High Altitude Air Shower Observatory (LHAASO), the construction of which was completed by the end of 2020. The WCDA covers a 78 000-m2 area and there exist 3120 large size pho

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d646cfe23a43206dd509f63b3ee790d2
https://doi.org/10.1109/tns.2021.3092739

Characteristics and Sources of Black Carbon and Organic Carbon in Topsoil from Different Functional Zones of Beijing, China

Autor: L. Liu, S.B. Yang

Publikováno v: Eurasian Soil Science. 54:927-942

Considering human activities are the most direct and important factors leading to the accumulation and loss of soil black carbon (BC), a detailed understanding of soil BC in different functional zones and reasonable soil management are the keys to de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a79d2db4cabac9c874c8b08abfc829dc
https://doi.org/10.1134/s1064229321060090

Corrigendum to 'Performance test of the electromagnetic particle detectors for the LHAASO experiment' [Nucl. Instrum. Methods Phys. Res. A 1001 (2021) 165193]

Autor: F. Aharonian, Q. An, null Axikegu, L.X. Bai, Y.X. Bai, Y.W. Bao, D. Bastieri, X.J. Bi, Y.J. Bi, H. Cai, J.T. Cai, Z. Cao, J. Chang, J.F. Chang, X.C. Chang, B.M. Chen, J. Chen, L. Chen, M.J. Chen, M.L. Chen, Q.H. Chen, S.H. Chen, S.Z. Chen, T.L. Chen, X.L. Chen, Y. Chen, N. Cheng, Y.D. Cheng, S.W. Cui, X.H. Cui, Y.D. Cui, B.Z. Dai, H.L. Dai, Z.G. Dai, null Danzengluobu, D. della Volpe, B. D’Ettorre Piazzoli, X.J. Dong, J.H. Fan, Y.Z. Fan, Z.X. Fan, J. Fang, K. Fang, C.F. Feng, L. Feng, S.H. Feng, Y.L. Feng, B. Gao, C.D. Gao, Q. Gao, W. Gao, M.M. Ge, L.S. Geng, G.H. Gong, Q.B. Gou, M.H. Gu, J.G. Guo, X.L. Guo, Y.Q. Guo, Y.Y. Guo, Y.A. Han, H.H. He, H.N. He, J.C. He, S.L. He, X.B. He, Y. He, M. Heller, Y.K. Hor, C. Hou, X. Hou, H.B. Hu, S. Hu, S.C. Hu, X.J. Hu, D.H. Huang, Q.L. Huang, W.H. Huang, X.T. Huang, Z.C. Huang, F. Ji, X.L. Ji, H.Y. Jia, K. Jia, K. Jiang, Z.J. Jiang, C. Jin, D. Kuleshov, K. Levochkin, B. Li, B.B. Li, C. Li, F. Li, H. Li, H.B. Li, H.C. Li, H.Y. Li, J. Li, K. Li, W.L. Li, X. Li, X.R. Li, Y. Li, Y.Z. Li, Z. Li, E.W. Liang, Y.F. Liang, S.J. Lin, B. Liu, C. Liu, D. Liu, H. Liu, H.D. Liu, J. Liu, J.L. Liu, J.S. Liu, J.Y. Liu, M.Y. Liu, R.Y. Liu, S.M. Liu, W. Liu, Y.N. Liu, Z.X. Liu, W.J. Long, R. Lu, H.K. Lv, B.Q. Ma, L.L. Ma, X.H. Ma, J.R. Mao, A. Masood, W. Mitthumsiri, T. Montaruli, Y.C. Nan, B.Y. Pang, P. Pattarakijwanich, Z.Y. Pei, M.Y. Qi, D. Ruffolo, V. Rulev, A. Sáiz, L. Shao, O. Shchegolev, X.D. Sheng, J.R. Shi, H.C. Song, Yu.V. Stenkin, V. Stepanov, Q.N. Sun, X.N. Sun, Z.B. Sun, P.H. T. Tam, Z.B. Tang, W.W. Tian, B.D. Wang, C. Wang, H. Wang, H.G. Wang, J.C. Wang, J.S. Wang, L.P. Wang, L.Y. Wang, R.N. Wang, W. Wang, X.G. Wang, X.J. Wang, X.Y. Wang, Y.D. Wang, Y.J. Wang, Y.P. Wang, Z. Wang, Z.H. Wang, Z.X. Wang, D.M. Wei, J.J. Wei, Y.J. Wei, T. Wen, C.Y. Wu, H.R. Wu, S. Wu, W.X. Wu, X.F. Wu, S.Q. Xi, J. Xia, J.J. Xia, G.M. Xiang, G. Xiao, H.B. Xiao, G.G. Xin, Y.L. Xin, Y. Xing, D.L. Xu, R.X. Xu, L. Xue, D.H. Yan, C.W. Yang, F.F. Yang, J.Y. Yang, L.L. Yang, M.J. Yang, R.Z. Yang, S.B. Yang, Y.H. Yao, Z.G. Yao, Y.M. Ye, L.Q. Yin, N. Yin, X.H. You, Z.Y. You, Y.H. Yu, Q. Yuan, H.D. Zeng, T.X. Zeng, W. Zeng, Z.K. Zeng, M. Zha, X.X. Zhai, B.B. Zhang, H.M. Zhang, H.Y. Zhang, J.L. Zhang, J.W. Zhang, L. Zhang, L.X. Zhang, P.F. Zhang, P.P. Zhang, R. Zhang, S.R. Zhang, S.S. Zhang, X. Zhang, X.P. Zhang, Y. Zhang, Y.F. Zhang, Y.L. Zhang, B. Zhao, J. Zhao, L. Zhao, L.Z. Zhao, S.P. Zhao, X. Zhao, F. Zheng, Y. Zheng, B. Zhou, H. Zhou, J.N. Zhou, P. Zhou, R. Zhou, X.X. Zhou, C.G. Zhu, F.R. Zhu, H. Zhu, K.J. Zhu, X. Zuo

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1022:165986

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a060cc0b14cf4ced7c32f44efdfb0dbc
https://doi.org/10.1016/j.nima.2021.165986

Effect of dynamic recrystallization at tool-chip interface on accelerating tool wear during high-speed cutting of AISI1045 steel

Autor: E.B. Yue, C.L. Pu, S.B. Yang, S. V. Subramanian, G. Zhu

Publikováno v: International Journal of Machine Tools and Manufacture. 100:72-80

Acceleration of tool crater wear in high-speed cutting is usually attributed to the high tool–chip interface temperature increasing diffusion coefficient( D E f f ), where the role of microstructure is ignored. The main purpose of this paper is to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7d411f021113a9f3cfa1da08dfc33740
https://doi.org/10.1016/j.ijmachtools.2015.10.006

Effects of flow ratios on surface morphology and structure of hydrogenated amorphous carbon films prepared by microwave plasma chemical vapor deposition

Autor: Youwen Yang, F.M. Pan, Wenjie Zhang, S.B. Yang

Publikováno v: Applied Surface Science. 255:9058-9061

A series of hydrogenated amorphous carbon (a-C:H) films were deposited on silicon substrates by microwave plasma chemical vapor deposition technique with a mixture of hydrogen and acetylene. The effects of flow ratio of hydrogen to acetylene on surfa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a50e26f9e17b55ba4bc9d324bffe4977
https://doi.org/10.1016/j.apsusc.2009.06.111