Zobrazeno 1 - 10
of 84
pro vyhledávání: '"S.A. Teys"'
Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study
Autor:
S.A. Teys
Publikováno v:
Applied Surface Science. 392:1017-1025
Structural and morphological features of the wetting layer formation and the transition to the three-dimensional Ge growth on (111) and (100) Si surfaces under quasi-equilibrium growth conditions were studied by means of scanning tunneling microscopy
Autor:
I.O. Akhundov, V.Sh. Aliev, V.L. Alperovich, A.P. Anciferov, A.L. Aseev, A.K. Bakarov, I.I. Beterov, M.V. Budantsev, A.A. Bykov, A.V. Chaplik, A. Chin, I.A. Derebezov, D.V. Dmitriev, S.A. Dvoretsky, A.V. Dvurechenskii, M.V. Entin, V.M. Entin, L.I. Fedina, T.A. Gavrilova, K.V. Grachev, V.A. Gritsenko, A.K. Gutakovskii, A.V. Haisler, V.A. Haisler, D.G. Ikusov, D.R. Islamov, E.V. Ivanova, M.M. Kachanova, V.V. Kaichev, A.K. Kalagin, A.N. Karpov, D.M. Kazantsev, S.S. Kosolobov, A.S. Kozhukhov, D.A. Kozlov, V.D. Kuzmin, Z.D. Kvon, A.V. Latyshev, A.S. Mardezov, A.S. Medvedev, N.N. Mikhailov, A.G. Milekhin, D.A. Nasimov, I.G. Neizvestny, L.A. Nenasheva, E.B. Olshanetsky, T.V. Perevalov, A.G. Pogosov, D.A. Pokhabov, V.P. Popov, V.Ya. Prinz, V.G. Remesnik, S.V. Rihlicky, E.E. Rodyakina, D.I. Rogilo, K.N. Romanyuk, N.S. Rudaya, I.I. Ryabtsev, I.V. Sabinina, V.K. Sandyrev, A.A. Saraev, O.I. Semenova, D.V. Sheglov, A.A. Shevyrin, A.A. Shklyaev, V.A. Shvets, N.L. Shwartz, G.Yu. Sidorov, Yu.G. Sidorov, S.V. Sitnikov, E.V. Spesivcev, A.S. Terekhov, S.A. Teys, O.A. Tkachenko, V.A. Tkachenko, A.I. Toropov, D.B. Tretyakov, A.V. Tsarev, I.E. Tyschenko, I.N. Uzhakov, V.S. Varavin, S.A. Vitkalov, A.I. Yakimov, M.V. Yakushev, A.S. Yaroshevich, D.R.T. Zahn, M.V. Zamoryanskaya, E.Yu. Zhdanov, Yu.A. Zhivodkov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0da5de83dc57a11bf54bce44596bd0a4
https://doi.org/10.1016/b978-0-12-810512-2.00028-7
https://doi.org/10.1016/b978-0-12-810512-2.00028-7
Autor:
S.A. Teys
Structural and morphological features of the formation of the wetting layer and the start of three-dimensional growth of Ge on Si(111) and (001) surfaces under quasi-equilibrium growth conditions were studied by means of scanning tunneling microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f3b3f9cdf3f8b7af7004a73677e4b82
https://doi.org/10.1016/b978-0-12-810512-2.00011-1
https://doi.org/10.1016/b978-0-12-810512-2.00011-1
Publikováno v:
Surface Science. 600:4878-4882
The vicinal Si(1 1 1) surface, inclined towards the [ 1 ¯ 1 ¯ 2 ] direction, was investigated by scanning tunnelling microscopy and spot profile analysing low energy electron diffraction. It has been established that the surface, consisting of regu
Publikováno v:
Physics of the Solid State. 46:80-84
The growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces is investigated by scanning tunneling microscopy (STM). It is shown that the formation of a Ge wetting layer on the Si(111) surface at germanium deposition rat
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Autor:
B.Z. Olshanetsky, S.A. Teys
Publikováno v:
Surface Science. 230:184-196
Structure and reversible structural phase transitions on clean vicinal Si surfaces inclined from the (111) plane towards [2 1 1 ] and [ 2 11] poles and the effect of nickel on the structure and the structural transitions on these surfaces have been s
Publikováno v:
Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005..
Investigation of a minimal stable nucleus on Si(111)-7/spl times/7 surface was carried out by interatomic potential calculations and STM image analyses. Potential relief for adatom diffusion through this surface was calculated using Tersoff potential
Publikováno v:
2003 Siberian Russian Workshop on Electron Devices and Materials. Proceedings. 4th Annual (IEEE Cat. No.03EX664).
The reasons for three-bilayer Ge nano-island nucleation on a Si(111) surface at low deposition rates, at the initial stages of wetting layer formation, were investigated. The simulation of Ge epitaxial growth on an atomically clean and flat Si(111) s
Akademický článek
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