Zobrazeno 1 - 10
of 60
pro vyhledávání: '"S.A. Merritt"'
Publikováno v:
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B. 20:141-145
High power semiconductor laser diodes and optical power amplifiers have important roles in solid state laser and optical fiber pumping, optical storage and recording, and can serve as efficient sources for medical and display applications. These high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aed63eb0e1f542b4d0a5a124ba46c90
https://doi.org/10.1109/96.575565
https://doi.org/10.1109/96.575565
Publikováno v:
Journal of Lightwave Technology. 13:430-433
We demonstrate that the Hakki-Paoli technique, commonly used for measuring single pass gain in semiconductor lasers, can be modified to measure facet modal reflectivity down to 10/sup -6/ in semiconductor laser amplifiers. We also introduce a new tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::725983a4ede64abcbb2c9cbba40a6868
https://doi.org/10.1109/50.372438
https://doi.org/10.1109/50.372438
Autor:
F.G. Johnson, Y.J. Chen, Dennis Stone, Mario Dagenais, F. Seiferth, R.D. Whaley, S.A. Merritt, S. Fox
Publikováno v:
IEEE Photonics Technology Letters. 9:1340-1342
We report a novel, polarization insensitive, 1.55-/spl mu/m semiconductor optical amplifier grown by solid source molecular beam epitaxy. The active region contains six Ga/sub 0.47/In/sub 0.53/As quantum wells, each containing three tensile strained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c56efbb4c57aa97bf2016454cfc3d9f0
https://doi.org/10.1109/68.623256
https://doi.org/10.1109/68.623256
Autor:
Y.J. Chen, O. King, Dennis Stone, S. Agarwala, Richard A. Wilson, G.A. Porkolab, S.A. Merritt, Mario Dagenais, Seyed Ahmad Tabatabaei, F.G. Johnson
Publikováno v:
IEEE Photonics Technology Letters. 9:490-492
A wet-chemistry treatment, consisting of a fresh mixture of one-to-one 2-propanol plus concentrated sulfuric acid added to photoresist developer, which is tetramethyl ammonium hydroxide, was found to reduce the dark-current density at the -5-V dc rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c67a09ce9b9659c43c57f733d5c37607
https://doi.org/10.1109/68.559398
https://doi.org/10.1109/68.559398
Autor:
S. Kareenahalli, B. Gopalan, C.E.C. Wood, Dennis Stone, Mario Dagenais, Vijay Vusirikala, S.A. Merritt
Publikováno v:
IEEE Photonics Technology Letters. 8:1130-1132
We report on low-loss, alignment-tolerant coupling between a single-quantum-well (SQW) GaAs-AlGaAs laser and a cleaved single-mode fiber. The laser was fabricated using conventional growth and processing techniques, and did not involve any regrowth.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e83538ea9cc05c5a5ac8cca8456c400
https://doi.org/10.1109/68.531812
https://doi.org/10.1109/68.531812
Autor:
S. Wilson, Yiwen Hu, Peter J. S. Heim, O. Konoplev, Richard P. Leavitt, Mario Dagenais, D. Bowler, Simarjeet S. Saini, S.A. Merritt, Dennis Stone
Publikováno v:
Scopus-Elsevier
The reliability testing methodology of 1550 nm, sub-200 nm broadly tunable InP-based laser chips for external cavity lasers is discussed. The article summarizes FIT rate achieved and degradation observed with multiple manufactured lots.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8033bece5eb3a3d33779a99e7bbba5d3
https://doi.org/10.1109/leos.2003.1252958
https://doi.org/10.1109/leos.2003.1252958
Autor:
Mario Dagenais, C.C. Lu, S.H. Cho, S. Fox, C. Dauga, C.E.C. Wood, Peter J. S. Heim, Pinghui S. Yeh, S.A. Merritt
Publikováno v:
Proceedings of LEOS'94.
Summary form only given. Tapered semiconductor amplifiers have successfully demonstrated high-power diffraction-limited emission. So far, all these amplifiers had normal incidence facets coated with antireflection (AR) coating to prevent self-oscilla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::709375b32604f495575f0fcef9f01c67
https://doi.org/10.1109/leos.1994.586635
https://doi.org/10.1109/leos.1994.586635
Autor:
Yung Jui Chen, Dennis Stone, F. Seiferth, Mario Dagenais, F.G. Johnson, R.D. Whaley, S.A. Merritt, S. Fox
Publikováno v:
Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting.
We report a novel semionductor optical amplifier device design that incorporates delta-strained quantum wells to achieve polarization insensitivity at a wavelength of 1.55 /spl mu/m. Solid source molecular beam epitaxy (MBE) was used to grow a GaInAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63d68ab61d2d3a2fb03c1f088e9b373b
https://doi.org/10.1109/leos.1997.630653
https://doi.org/10.1109/leos.1997.630653
Publikováno v:
1997 Proceedings 47th Electronic Components and Technology Conference.
We have developed a general method for rapidly bonding semiconductor laser arrays, optical traveling wave amplifier arrays, and other optoelectronic devices to silicon waferboards or submounts. Our method uses octagonal electrodeposited copper bosses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7a9b2186b62e8a4095d47dfcdd397cd
https://doi.org/10.1109/ectc.1997.606258
https://doi.org/10.1109/ectc.1997.606258
Publikováno v:
1995 Proceedings. 45th Electronic Components and Technology Conference.
We have developed a reliable, high yield, void-free method for soldering high power semiconductor laser diodes epitaxy-side down. We have consistently obtained absolute thermal resistances as low at 1.5/spl deg/C/Watt and specific thermal resistances
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0922a5d4190abdc14ee8e5e24b4c79d2
https://doi.org/10.1109/ectc.1995.515316
https://doi.org/10.1109/ectc.1995.515316