Zobrazeno 1 - 10
of 33
pro vyhledávání: '"S.A. Grot"'
The electrical properties and device applications of homoepitaxial and polycrystalline diamond films
Publikováno v:
Proceedings of the IEEE. 79:647-668
Electronic applications of semiconductor diamonds are addressed. Doping and electrical properties of these films, formation of low-resistive 'ohmic' contacts, surface modification methods, and experimental device applications are discussed. Of partic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d818f8aa09e0d65f50fd367999ce7b80
https://doi.org/10.1109/5.90130
https://doi.org/10.1109/5.90130
Autor:
G.Sh. Gildenblat, Andrzej Badzian, Teresa Badzian, C. W. Hatfield, Russell Messier, Soonil Lee, C.R. Wronski, S.A. Grot
Publikováno v:
Journal of Materials Research. 5:2497-2501
Schottky diodes were formed with free-standing polycrystalline thin film diamond base as well as with polycrystalline diamond films grown on crystalline silicon. Current-voltage and internal photoemission measurements were used to characterize the Sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e9778faf5e26067d1b476649df3cdfd
https://doi.org/10.1557/jmr.1990.2497
https://doi.org/10.1557/jmr.1990.2497
Autor:
G.S. Gildenblat, Russell Messier, Andrzej Badzian, Teresa Badzian, S.A. Grot, M. C. Hicks, C.R. Wronski
Publikováno v:
Technical Digest., International Electron Devices Meeting.
Schottky diodes were fabricated using metal contacts to thin diamond films obtained by a plasma-enhanced chemical vapor deposition process. The diamond structure of the films was confirmed by X-ray diffraction patterns and Raman scattering spectra. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ff5bd6beed05def74eaa1a0264d037b
https://doi.org/10.1109/iedm.1988.32892
https://doi.org/10.1109/iedm.1988.32892
Publikováno v:
Applied Physics Letters. 61:2326-2328
Oxygen‐based electron cyclotron resonance (ECR) plasma etching of boron doped homoepitaxial diamond films with no de bias has been achieved. The process was developed to the point where it can provide a uniform and reproducible etching procedure th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c645dd41ec9db3cc2674254cc6de379c
https://doi.org/10.1063/1.108232
https://doi.org/10.1063/1.108232
Publikováno v:
IEEE Electron Device Letters. 13:462-464
A new technique for etching boron-doped homoepitaxial diamond films was used to fabricate mesa-isolated recessed gate field-effect transistors that operate at temperatures up to 350 degrees C. The upper temperature range is limited by the gate leakag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1e100d9437a8125d68c486b6b998cc4
https://doi.org/10.1109/55.192795
https://doi.org/10.1109/55.192795
Publikováno v:
Applied Physics Letters. 58:1542-1544
Boron‐doped homoepitaxial diamond films were selectively grown using sputtered SiO2 as a masking material. Uniform thickness, down to 50 nm, over a large area can be achieved with this technique. Hall mobility of selectively grown films is comparab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e064a879b22986bb335175e2d4aa5a2
https://doi.org/10.1063/1.105172
https://doi.org/10.1063/1.105172
Publikováno v:
IEEE Electron Device Letters. 12:37-39
Selective growth of boron-doped homoepitaxial diamond films was achieved using sputtered SiO/sub 2/ as a masking layer. The hole mobility of selectively grown films varied between 210 and 290 cm/sup 2//V-s for hole concentration between 1.0*10/sup 14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e351430179cdab6790b4de73eba06f9
https://doi.org/10.1109/55.75696
https://doi.org/10.1109/55.75696
Autor:
Andrzej Badzian, C.R. Wronski, G.S. Gildenblat, Teresa Badzian, C. W. Hatfield, S.A. Grot, Russell Messier
Publikováno v:
IEEE Electron Device Letters. 11:100-102
Both doped and undoped homoepitaxial diamond films were fabricated using microwave plasma-enhanced chemical vapor deposition (CVD). The conductivity of the diamond film is strongly affected by the surface treatment. In particular, exposure of film su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b132f7889ab3f06466ca20600b2ac0e
https://doi.org/10.1109/55.46942
https://doi.org/10.1109/55.46942
Publikováno v:
Diamond and Diamond-like Films and Coatings ISBN: 9781468459692
Diamond has many physical properties that make it an attractive semiconductor material for high-temperature and high power electronic devices1. Natural diamonds and synthetic bulk diamond fabricated by the traditional ultra high-pressure high-tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09782f1ee8d5466a2346513a2feef405
https://doi.org/10.1007/978-1-4684-5967-8_55
https://doi.org/10.1007/978-1-4684-5967-8_55
