Zobrazeno 1 - 10
of 69
pro vyhledávání: '"S.A. Chalmers"'
Publikováno v:
IEEE Photonics Technology Letters. 6:778-781
We report advances in the power conversion efficiencies of vertical-cavity top-surface-emitting lasers defined by proton implantation. Efficiencies as high as 13.4% and 15.8% have been obtained for single-mode and multimode operation, respectively. S
Autor:
J. Cheng, Kevin L. Lear, Gregory A. Vawter, John C. Zolper, A.C. Adams, Ronald E. Leibenguth, Yin-Chen Lu, Bo Lu, J.L. Zilko, Ping Zhou, S.A. Chalmers
Publikováno v:
IEEE Photonics Technology Letters. 6:398-401
Optical switches based on GaAs/AlGaAs vertical-cavity surface-emitting lasers and heterojunction phototransistors are combined monolithically into new switching configurations that perform optical logic and spatial routing in a dynamically programmab
Autor:
Gregory A. Vawter, Kevin L. Lear, R.E. Leibenguth, S.A. Chalmers, A.C. Adams, J. Cheng, J.L. Zilko, Ping Zhou, Yin-Chen Lu, Bo Lu, John C. Zolper
Publikováno v:
IEEE Photonics Technology Letters. 6:222-226
The design, fabrication, and experimental demonstration of dynamically reconfigurable binary optical switches based on the integration of GaAs/AlGaAs vertical-cavity surface-emitting lasers and heterojunction phototransistors are reported. These new
Autor:
S.A. Chalmers, Gregory A. Vawter, Ping Zhou, Kevin L. Lear, John C. Zolper, Ronald E. Leibenguth, A.C. Adams, J. Cheng
Publikováno v:
IEEE Photonics Technology Letters. 5:1035-1038
We describe the design and the first experimental demonstration of a monolithic integrated optoelectronic switch combining a GaAs/AlGaAs heterojunction bipolar transistor (HBT) with a vertical-cavity surface-emitting laser (VCSEL). The switch has hig
Autor:
S.A. Chalmers, Kevin L. Lear
Publikováno v:
IEEE Photonics Technology Letters. 5:972-975
We report advances in the power conversion (wall-plug) efficiency of vertical-cavity top-surface-emitting lasers. The devices were fabricated from molecular beam epitaxial layers using deep proton implants to define gain-guided lasers. The epitaxial
Publikováno v:
Solid State Communications. 79:223-226
Defect-activated interface modes with a large range of possible wave vectors in the superlattice planes, as well as interface modes with a well-defined in-plane wave vector, induced by a titled 80A-period GaAs/AlAs superlattice on the surface of a (G
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Autor:
K.L. Lear, S.A. Chalmers
Publikováno v:
51st Annual Device Research Conference.
Publikováno v:
Proceedings of LEOS '93.
Annealing of implant damage in proton implant isolated, top-emitting VCSELs at temperatures up to 400 /spl deg/C has been shown to improve power conversion efficiency through threshold current reduction. Additionally, lower temperature (300 /spl deg/
Autor:
Julian Cheng, Ronald E. Leibenguth, S.A. Chalmers, John C. Zolper, A.C. Adams, Kevin L. Lear, Ping Zhou, Gregory A. Vawter, J.L. Zilko
Publikováno v:
Proceedings of LEOS '93.
Monolithic arrays of optical switches based on the integration of GaAs vertical cavity surface-emitting lasers (VCSELs) with heterojunction phototransistors form a flexible two-dimensional switching fabric that is useful for a variety of applications