Zobrazeno 1 - 10
of 667
pro vyhledávání: '"S.-J. Jeng"'
Autor:
Akbari-Gharalari, Naeimeh1, Khodakarimi, Sina1, Nezhadshahmohammad, Farshad2, Karimipour, Mohammad3, Ebrahimi-Kalan, Abbas1 Abbasebra@gmail.com, Jiagian Wu4,5,6
Publikováno v:
BioImpacts. Sep2024, Vol. 14 Issue 5, p1-17. 17p.
Autor:
Akhmedov, Farkhod1 (AUTHOR) farhodsam92@gmail.com, Nasimov, Rashid2 (AUTHOR) rashid.nasimov@tsue.uz, Abdusalomov, Akmalbek1 (AUTHOR) akmaljon@gachon.ac.kr
Publikováno v:
Fire (2571-6255). Sep2024, Vol. 7 Issue 9, p332. 19p.
Autor:
E. Engbrecht, Edward P. Maciejewski, Christopher D. Sheraw, R. Divakaruni, Zhengwen Li, Allen H. Gabor, L. Economikos, Fernando Guarin, N. Zhan, H-K Lee, MaryJane Brodsky, Kenneth J. Stein, Siyuranga O. Koswatta, Y. Yang, Byeong Y. Kim, J. Hong, A. Bryant, Herbert L. Ho, Ruqiang Bao, Nicolas Breil, Babar A. Khan, E. Woodard, W-H. Lee, C-H. Lin, A. Levesque, Kevin McStay, V. Basker, Viraj Y. Sardesai, C. Tran, A. Ogino, Reinaldo A. Vega, C. DeWan, Shreesh Narasimha, J-J. An, Amit Kumar, A. Aiyar, Ravikumar Ramachandran, W. Wang, X. Wang, W. Nicoll, D. Hoyos, A. Friedman, Barry Linder, Yongan Xu, E. Alptekin, Cathryn Christiansen, S. Polvino, Han Wang, Scott R. Stiffler, G. Northrop, S. Saudari, J. Rice, Saraf Iqbal Rashid, Sunfei Fang, Michael V. Aquilino, Z. Ren, B. Kannan, Geng Wang, Noah Zamdmer, T. Kwon, Paul D. Agnello, Hasan M. Nayfeh, S. Jain, Robert R. Robison, M. Hasanuzzaman, J. Cai, L. Lanzerotti, D. Wehelle-Gamage, Basanth Jagannathan, J. Johnson, E. Kaste, Kai Zhao, Huiling Shang, Carl J. Radens, Shariq Siddiqui, Y. Ke, D. Ferrer, Ximeng Guan, D. Conklin, K. Boyd, K. Henson, Siddarth A. Krishnan, Bernard A. Engel, H. Dong, S. Mahajan, Unoh Kwon, Dominic J. Schepis, William Y. Chang, Liyang Song, Brian J. Greene, Chengwen Pei, S.-J. Jeng, Clevenger Leigh Anne H, Vijay Narayanan, C. Zhu, Wai-kin Li, Henry K. Utomo, Wei Liu, Dureseti Chidambarrao
Publikováno v:
2014 IEEE International Electron Devices Meeting.
We present a fully integrated 14nm CMOS technology featuring finFET architecture on an SOI substrate for a diverse set of SoC applications including HP server microprocessors and LP ASICs. This SOI finFET architecture is integrated with a 4th generat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6233530b0b3fd6ddc14276a018716523
https://doi.org/10.1109/iedm.2014.7046977
https://doi.org/10.1109/iedm.2014.7046977
Autor:
Abdi SMY; Department of Biomedical Sciences, Faculty of Medicine and Health Sciences, Universiti Putra Malaysia, Serdang, 43400, Selangor, Malaysia., Al-Bakri SSM; Department of Biomedical Sciences, Faculty of Medicine and Health Sciences, Universiti Putra Malaysia, Serdang, 43400, Selangor, Malaysia., Nordin N; Department of Biomedical Sciences, Faculty of Medicine and Health Sciences, Universiti Putra Malaysia, Serdang, 43400, Selangor, Malaysia. shariza@upm.edu.my.; Malaysian Research Institute on Ageing (MyAgeing™), Universiti Putra Malaysia, 43400, Serdang, Selangor, Malaysia. shariza@upm.edu.my.; Genetics & Regenerative Medicine (ReGEN) Research Group, Faculty of Medicine and Health Sciences, Universiti Putra Malaysia, Serdang, 43400, Selangor, Malaysia. shariza@upm.edu.my.
Publikováno v:
Cell biochemistry and biophysics [Cell Biochem Biophys] 2024 Oct 22. Date of Electronic Publication: 2024 Oct 22.
Autor:
M. Gilbert, David L. Harame, David C. Ahlgren, J. Malinowski, D. Nguyen-Ngoc, S.-J. Jeng, Kathryn T. Schonenberg, Bernard S. Meyerson, D.A. Sunderland, Kenneth J. Stein
Publikováno v:
Solid-State Electronics. 41:1503-1507
This article reviews the status of IBM's SiGe HBT technology, with a focus on manufacturability issues and circuit applications. Device design and process integration issues which have driven the development of the technology are discussed. Device re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c130c69ec21a1694e6c34134fdafa054
https://doi.org/10.1016/s0038-1101(97)00096-8
https://doi.org/10.1016/s0038-1101(97)00096-8
Autor:
J. Malinowski, D. Sunderland, D. C. Ahlgren, David Harame, M. Soyuer, S.-J. Jeng, Kathryn T. Schonenberg, D. Nguyen-Ngoc, K. Stein, M. Gilbert, B. Meyerson
Publikováno v:
Canadian Journal of Physics. 74:159-166
This review discusses the fundamentals of SiGe epitaxial base heterojunction bipolar transistor (HBT) technology that have been developed for use in analog and mixed-signal applications in the 1–20 GHz range. The basic principles of operation of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0315989fd14894e814004aa3c54e133f
https://doi.org/10.1139/p96-851
https://doi.org/10.1139/p96-851
Autor:
J. Malinowski, M. Gilbert, David L. Harame, D. Nguyen-Ngoc, K.S. Stein, D.A. Sunderland, Kathryn T. Schonenberg, David C. Ahlgren, Bernard S. Meyerson, S.-J. Jeng
Publikováno v:
Applied Surface Science. 102:194-201
Graded SiGe-base heterojunction transistors (HBTs) offer the advantages of bandgap engineering while maintaining the cost and manufacturing benefits of the silicon industry. For a technology to be widely used in the mixed signal applications arena it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6617434be154fd3a987ae28c1e40478
https://doi.org/10.1016/0169-4332(96)00048-7
https://doi.org/10.1016/0169-4332(96)00048-7
Autor:
Andreas D. Stricker, Peter Andrew Smith, Jae-Sung Rieh, John E. Florkey, S.-J. Jeng, H. Chen, Marwan H. Khater, Gregory G. Freeman, J. Johnson, Kathryn T. Schonenberg, David C. Ahlgren, E. Mengistu, Basanth Jagannathan, S. Subbanna, C.M. Schnabel, David R. Greenberg, F. Golan, Kenneth J. Stein, Francois Pagette, R.A. Groves, David Angell
Publikováno v:
IEEE Electron Device Letters. 23:258-260
This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f/sub T/) of 207 GHz and an f/sub MAX/ extrapolated from Mason's unilateral gain of 285 GHz. f/sub MAX/ extrapolated from maximum available gain is 194 GHz. Transistors sized 0.12/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baa60a555d8c26bf4d785edc577ace87
https://doi.org/10.1109/55.998869
https://doi.org/10.1109/55.998869
Autor:
Putthanbut, Napasiri1,2 (AUTHOR), Lee, Jea Young1 (AUTHOR), Borlongan, Cesario V.1 (AUTHOR) cborlong@usf.edu
Publikováno v:
Journal of Biomedical Science. 8/25/2024, Vol. 31 Issue 1, p1-24. 24p.
Autor:
Nouri, Zeinab1,2 (AUTHOR), Barfar, Ashkan3 (AUTHOR), Perseh, Sahra2 (AUTHOR), Motasadizadeh, Hamidreza4 (AUTHOR), Maghsoudian, Samane2,5 (AUTHOR), Fatahi, Yousef2,5 (AUTHOR), Nouri, Keyvan6 (AUTHOR), Yektakasmaei, Mohaddese Pourashory7 (AUTHOR), Dinarvand, Rassoul2,5,8 (AUTHOR), Atyabi, Fatemeh2,5 (AUTHOR) atyabifa@tums.ac.ir
Publikováno v:
Journal of Nanobiotechnology. 8/2/2024, Vol. 22 Issue 1, p1-28. 28p.