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pro vyhledávání: '"S.-I Mo"'
Publikováno v:
Microelectronics Journal. 32:497-502
We proposed a new lateral double-diffused MOS (LDMOS) structure employing a double p/n epitaxial layer, which is formed on p− substrates. Trenched gate and drain are also employed to obtain uniform and high drift current density. The breakdown volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::321dd2b7618cbe1d5048e39622a6dba8
https://doi.org/10.1016/s0026-2692(01)00021-0
https://doi.org/10.1016/s0026-2692(01)00021-0
