Zobrazeno 1 - 10
of 30
pro vyhledávání: '"S. Zandolin"'
Autor:
A. De Battisti, Alvise Benedetti, Luca Nanni, S. Zandolin, Giancarlo Battaglin, Sergio Ferro, V. Rigato
Publikováno v:
Chemistry of Materials. 16:946-952
Ruthenium dioxide films were prepared by radio-frequency magnetron sputtering onto Si and Ti substrates. Films of different thicknesses (100-500 nm) were synthesized at substrate temperatures of 40, 350, and 450 °C. Their composition has been studie
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :440-444
Profilometer step-height measurements, ion-beam analysis, and electron microscopy have been used to characterize the structural changes and hydration of argon, krypton, and xenon implanted fused silica and soda-lime glass. For both glasses, a structu
Publikováno v:
Journal of Nuclear Materials. :709-713
In this paper the boronization lifetime in the reversed field pinch experiment RFX is discussed. It is found that the redeposition of carbon-rich layers, which grow during plasma exposure, cover the boron containing layers preventing the getter effec
Autor:
S. Lo Russo, Cristiana Tosello, E. Carpene, G. Principi, Luigi M. Gratton, F. Caccavale, S. Zandolin, A. Perin
Publikováno v:
Hyperfine Interactions. 113:419-427
Ion‐beam mixing of Fe–Mn bilayers induced by 100 keV krypton ions in the dose range (0.1-15)×1015 ions/cm2has been studied by means of conversion electron Mossbauer spectroscopy and X‐ray diffraction. The results indicate that a dose of about
Autor:
Lorenzo Torrisi, S. Zandolin, V. Rigato, Giacomo Cuttone, C. Marchetta, Alberto Quaranta, G. Delta Mea
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. 4:218-223
At the Istituto Nazionale di Fisica Nucleare Laboratorio Nazionale del Sud of Catania, a K=800 superconducting cyclotron is in operation since 1994. The accelerator beam extraction is accomplished using electrostatic deflectors constituted by HV elec
Publikováno v:
Scopus-Elsevier
Wide band gap a-SiC:H and a-SiN:H films have been deposited by ultra high vacuum plasma enhanced chemical vapor deposition. For a-SiC:H films SiH 4 + CH 4 , SiH 4 + CH 4 + H 2 and SiH 4 + C 2 H 2 gas mixtures have been used, whereas for a-SiN:H films
Autor:
D. Zafiropoulos, S.O. Olabanji, G. Moschini, Roberto Cherubini, A. M. I. Haque, M.C. Buoso, R.T. Ajayi, Daniele Ceccato, S. Zandolin
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :262-265
The complementary nuclear techniques of PIXE, PIGE, SEM and EDAX were employed to the study of geological samples from Wuyo, North East of Nigeria. The geological samples studied include (i) sandstones (fresh, mylonised and silicified), (ii) granites
Autor:
Lionello Marrelli, Piergiorgio Sonato, M. Valisa, G. Della Mea, W.R. Baker, A. Murari, L. Tramontin, V. Antoni, S. Zandolin, L. Carraro, A. Buffa, S. Costa, R. Bertoncello, V. Rigato, M. E. Puiatti, P. Scarin
Publikováno v:
Journal of nuclear materials 227 (1996): 259–265. doi:10.1016/0022-3115(95)00161-1
info:cnr-pdr/source/autori:Sonato P.; Antoni V.; Baker WR.; Bertoncello R.; Buffa A.; Carraro L.; Costa S.; Della Mea G.; Marrelli L.; Murari A.; Puiatti M.E.; Rigato V.; Scarin P.; Tramontin L.; Valisa M.; Zandolin S./titolo:Boronization with trimethylboron in the reversed field pinch RFX/doi:10.1016%2F0022-3115(95)00161-1/rivista:Journal of nuclear materials/anno:1996/pagina_da:259/pagina_a:265/intervallo_pagine:259–265/volume:227
Journal of nuclear materials 27 (1996): 259–265. doi:10.1016/0022-3115(95)00161-1
info:cnr-pdr/source/autori:P. Sonato a,., V. Antoni a, W.R. Baker a, R. BertonceUo b, A. Buffa a, L. Carraro a, S. Costa a, G. Della Mea c, L. Marrelli a, A. Murari a, M.E. Puiatti a, V. Rigato c, P. Scarin a, L. Tramontin a, M. Valisa a, S. Zandolin c/titolo:Boronization with trimethylboron in the reversed field pinch RFX/doi:10.1016%2F0022-3115(95)00161-1/rivista:Journal of nuclear materials/anno:1996/pagina_da:259/pagina_a:265/intervallo_pagine:259–265/volume:27
info:cnr-pdr/source/autori:Sonato P.; Antoni V.; Baker WR.; Bertoncello R.; Buffa A.; Carraro L.; Costa S.; Della Mea G.; Marrelli L.; Murari A.; Puiatti M.E.; Rigato V.; Scarin P.; Tramontin L.; Valisa M.; Zandolin S./titolo:Boronization with trimethylboron in the reversed field pinch RFX/doi:10.1016%2F0022-3115(95)00161-1/rivista:Journal of nuclear materials/anno:1996/pagina_da:259/pagina_a:265/intervallo_pagine:259–265/volume:227
Journal of nuclear materials 27 (1996): 259–265. doi:10.1016/0022-3115(95)00161-1
info:cnr-pdr/source/autori:P. Sonato a,., V. Antoni a, W.R. Baker a, R. BertonceUo b, A. Buffa a, L. Carraro a, S. Costa a, G. Della Mea c, L. Marrelli a, A. Murari a, M.E. Puiatti a, V. Rigato c, P. Scarin a, L. Tramontin a, M. Valisa a, S. Zandolin c/titolo:Boronization with trimethylboron in the reversed field pinch RFX/doi:10.1016%2F0022-3115(95)00161-1/rivista:Journal of nuclear materials/anno:1996/pagina_da:259/pagina_a:265/intervallo_pagine:259–265/volume:27
The first wall and the vessel of the Reversed Field Pinch RFX has been in situ coated with a B/C:H film by glow discharge cleaning with a mixture of 12.5% of trimethylboron ((CH3)(3)B) in He. The film has been analysed and the effects on the plasma d
Autor:
Candido Pirri, V. Rigato, S. Zandolin, G. Della Mea, Elena Maria Tresso, Fabrizio Giorgis, F. Demichelis
Publikováno v:
Diamond and Related Materials. 4:357-360
In this paper we present a study on a-SiC:H films with energy gap in the range 2.2–3.5 eV grown by plasma-enhanced CVD from CH 4 + SiH 4 mixtures, with and without H 2 dilution. The compositional, structural and optoelectronic properties of the fil
Autor:
G. P. Egeni, G. Lamanna, G. Ciullo, P. Lenisa, V. Rigato, L.B. Tecchio, S. Zandolin, B. Yang, G. Della Mea, V. Rudello, Vincenzo Guidi, Roberto Calabrese, B. Maciga
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 340:109-113
We discuss the performance improvement of a GaAs electron source. High quantum yield (14%) and constant current extraction (1 mA for more than four weeks) are achieved after a little initial decay. These parameters meet the requirements for applicati