Zobrazeno 1 - 10
of 24
pro vyhledávání: '"S. Yu. Shapoval"'
Autor:
A. I. Semenenko, E. A. Polushkin, I. A. Semenenko, A. A. Mitina, Anatoly Kovalchuk, E. I. Galperin, S. Yu. Shapoval, T. G. Dyuzheva
Publikováno v:
NAUCHNOE PRIBOROSTROENIE. 26:3-12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39c2bd9e6563bee8d21506aaac1f96d6
https://doi.org/10.18358/np-26-4-i312
https://doi.org/10.18358/np-26-4-i312
Publikováno v:
Semiconductors. 49:1727-1730
Dependence of the chemical composition of a film of plasma-chemical silicon nitride on the technological parameters of the deposition process is studied. The stages in which the process parameters are optimized in order to improve the masking propert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34d92eef3b00af6b2138e9e7a011ec8e
https://doi.org/10.1134/s1063782615130084
https://doi.org/10.1134/s1063782615130084
Autor:
Vyacheslav V. Popov, K. V. Maremyanin, Irina Khmyrova, N. A. Maleev, S. Yu. Shapoval, E. A. Polushkin, V. A. Bespalov, V. I. Egorkin, D. M. Yermolaev, V. E. Zemlyakov, V. M. Ustinov, Anatoly Kovalchuk, V. I. Gavrilenko
Publikováno v:
2017 International Conference on Applied Electronics (AE).
Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was comprised of large serpentine array of high-electron mobility transistors (HEMTs) connected in series. The floating drain contact of each transistor (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91b718aaf16b12b84ffaef017c456a7c
https://doi.org/10.23919/ae.2017.8053630
https://doi.org/10.23919/ae.2017.8053630
Autor:
D. M. Yermolayev, E. A. Polushkin, A. V. Koval’chuk, S. Yu. Shapoval, K. V. Marem’yanin, V. I. Gavrilenko, N. A. Maleev, V. M. Ustinov, V. E. Zemlyakov, V. I. Yegorkin, V. A. Bespalov, V. V. Popov, I. Khmyrova
Publikováno v:
Fundamental and Applied Problems of Terahertz Devices and Technologies.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ca76bfb826fa6e64a34f4b4046820c9
https://doi.org/10.1142/9789813223288_0002
https://doi.org/10.1142/9789813223288_0002
Autor:
D. M. Yermolayev, F.F. Sizov, Denis V. Fateev, K. M. Maremyanin, Nikolai A. Maleev, Vyacheslav V. Popov, S. Yu. Shapoval, V. I. Gavrilenko, V. E. Zemlyakov, Sergey V. Morozov
Publikováno v:
Solid-State Electronics. 86:64-67
We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency range. The fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f98a71e48a39f2ad377dc1a2e6fc17c
https://doi.org/10.1016/j.sse.2012.09.009
https://doi.org/10.1016/j.sse.2012.09.009
Autor:
V. A. Bespalov, Vyacheslav V. Popov, S. Yu. Shapoval, N. A. Maleev, V. I. Egorkin, K. V. Maremyanin, Bogdan Shevchenko, Irina Khmyrova, D. M. Yermolaev, V. E. Zemlyakov, V. M. Ustinov, V. I. Gavrilenko
Publikováno v:
2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications.
Array of field-effect transistors (FET) with asymmetric T-gates and floating electrodes fabricated on a single chip was used as terahertz (THz) detector. Nonresonant detection with strong photovoltaic response was realized due to excitation of electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e94930fe9ee6066ef01923254138361
https://doi.org/10.1109/gsmm.2016.7500291
https://doi.org/10.1109/gsmm.2016.7500291
Autor:
Denis V. Fateev, V. I. Gavrilenko, Nikolai A. Maleev, K. V. Maremyanin, Sergey V. Morozov, S. Yu. Shapoval, D. M. Ermolaev, Vyacheslav V. Popov, V. E. Zemlyakov
Publikováno v:
Technical Physics Letters. 36:365-368
Terahertz photoresponse of a GaAs/InGaAs transistor structure with large-area slit grating gate has been measured. Peaks in the photoresponse curve are assigned to plasmon resonances excited in the structure. More effective excitation of plasmon reso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f1382ceae3f9bed266a749cf638b67c
https://doi.org/10.1134/s106378501004022x
https://doi.org/10.1134/s106378501004022x
Publikováno v:
Inorganic Materials. 45:140-144
The interphase boundary formed in the process of tungsten thin-film deposition on a silicon wafer is investigated. These films are produced via (1) a CVD technique relying on hydrogen reduction of tungsten hexafluoride, (2) the same technique supplem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d45bcaf6d462c5c11ce8709d4809cec
https://doi.org/10.1134/s002016850902006x
https://doi.org/10.1134/s002016850902006x
Autor:
K. V. Maremyanin, Irina Khmyrova, V. I. Gavrilenko, V. E. Zemlyakov, Vyacheslav V. Popov, V. I. Egorkin, V. A. Bespalov, N. A. Maleev, D. M. Yermolaev, V. M. Ustinov, S. Yu. Shapoval
Publikováno v:
2015 International Topical Meeting on Microwave Photonics (MWP).
An array of GaAs/InGaAs/AlGaAs field-effect transistors with an asymmetric T-gate in each transistor and floating electrodes was fabricated on a single chip and tested as a detector of terahertz (THz) radiation. Principle of detection was based on ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa38a9419c159ff04ab20d1811ab65c2
https://doi.org/10.1109/mwp.2015.7356679
https://doi.org/10.1109/mwp.2015.7356679
Autor:
D. M. Yermolayev, E. A. Polushkin, S. Yu. Shapoval, V. V. Popov, K. V. Marem'yanin, V. I. Gavrilenko, N. A. Maleev, V. M. Ustinov, V. E. Zemlyakov, V. I. Yegorkin, V. A. Bespalov, A. V. Muravjov, S. L. Rumyantsev, M. S. Shur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6aec66d6c788f838acd0809b99cd9a22
https://doi.org/10.1142/9789814725200_0002
https://doi.org/10.1142/9789814725200_0002
