Zobrazeno 1 - 10
of 17
pro vyhledávání: '"S. Ya. Salomatin"'
Publikováno v:
Measurement Techniques. 47:1032-1038
A new procedure is described for preparing standard spectra of the inverse self-convolution of the density of states for silicon oxide required for performing non-destructive quantitative Auger analysis of SiOx. Research results are used for determin
Publikováno v:
Technical Physics Letters. 30:259-261
The process of oxidation of the surface of porous silicon in the course of aqueous after-etching has been studied by monitoring the change in the shape of the inverse self-convolution of a SiL23VV peak in the Auger electron spectrum. It was found tha
Publikováno v:
Technical Physics Letters. 30:88-90
The interface mechanism of photoluminescence (PL) in carbonized porous silicon is considered. The model involves processes in a heterojunction between p-Si and p-SiC nanodimensional grains and the interfacial SiOx and SixOyC1−x−y layers, where th
Publikováno v:
Measurement Techniques; Oct2004, Vol. 47 Issue 10, p1032-1038, 7p
Autor:
Nagornov, Yu.1 Nagornov.Yuri@gmail.com
Publikováno v:
Journal of Experimental & Theoretical Physics. Dec2015, Vol. 121 Issue 6, p1042-1051. 10p.
Autor:
Nagornov, Yu.1 Nagornov.Yuri@gmail.com
Publikováno v:
Technical Physics. May2015, Vol. 60 Issue 5, p700-709. 10p.
Autor:
Nagornov, Yu. S.1 imfit@ulsu.ru, Kostishko, B. M.1, Mikov, S. N.1, Atazhanov, Sh. R.2, Zolotov, A. V.1, Pchelintseva, E. S.1
Publikováno v:
Technical Physics. Aug2007, Vol. 52 Issue 8, p1093-1097. 5p. 1 Black and White Photograph, 3 Graphs.
Autor:
Baran, M., Khomenkova, L., Korsunska, N., Stara, T., Sheinkman, M., Goldstein, Y., Jedrzejewski, J., Savir, E.
Publikováno v:
Journal of Applied Physics; 12/1/2005, Vol. 98 Issue 11, p113515, 5p, 3 Graphs
Publikováno v:
Technical Physics Letters. Apr2004, Vol. 30 Issue 4, p259-261. 3p.
Publikováno v:
Technical Physics Letters. Feb2004, Vol. 30 Issue 2, p88-90. 3p.