Zobrazeno 1 - 10
of 25
pro vyhledávání: '"S. Y. Yung"'
Autor:
Janus S H Wong, Alfred L H Lee, Christian Fang, Henry C H Leung, Alicia H Y Liu, Ryan C K So, Colin S Y Yung, Tak-Man Wong, Frankie Leung
Publikováno v:
Journal of Orthopaedic Surgery, Vol 30 (2022)
Purpose: To determine mortality and outcomes of patients diagnosed with fracture-related infections (FRIs). Methods: FRI patients treated at a trauma centre between 2001 and 2020 were analysed. The primary outcome was 1-year mortality; mortality asso
Externí odkaz:
https://doaj.org/article/859620d5fe1e40cfb03dfc9a6ad1b22d
Autor:
D Huang, Y Y Cheng, Y T Wong, S Y Yung, C C Tam, K W Chan, C C Lam, K H Yiu, J J Hai, C P Lau, W Y Chan, C E Chiang, H F Tse, P H Chan, C W Siu
Publikováno v:
European Heart Journal. 39
Publikováno v:
Physiologia Plantarum. 82:79-84
Propionic acid and valeric acid at 1 mM reduced the mitotic index of root meristem cells of Pisum sativum to
Autor:
W. W. Liu, N. K. Choy, S. L. Yip, S. Y. Cheung, S. Y. Yung, K. C. Tai, K. W. Chu, Boris Fung, L. Y. Chung, K. Y. Chan, L. Y. Lam
Publikováno v:
Hand surgery : an international journal devoted to hand and upper limb surgery and related research : journal of the Asia-Pacific Federation of Societies for Surgery of the Hand. 12(1)
Occupational risk factors of carpal tunnel syndrome (CTS) are popular current research targets, with main emphasis put on wrist posture and dynamics. In this study, we do not intend to pinpoint individual occupations, but aim to identify high risk wr
Autor:
D.E. Burk, S.-Y. Yung
Publikováno v:
Proceedings of the 1988 Bipolar Circuits and Technology Meeting.
The best-case power-delay products for bipolar-transistor gates that have optimally designed transistors with polysilicon-contacted emitters, both with and without interfacial layers between the polysilicon and underlying emitter, are predicted. It i
Akademický článek
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Akademický článek
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Publikováno v:
Solid-State Electronics. 29:1243-1251
A one-dimensional numerical computer simulation of minority-hole transport in heavily doped n+ silicon emitters is developed accounting for significant temperature dependences. The model includes the most recent insights regarding heavy-doping effect
Autor:
S.-Y. Yung, D.E. Burk
Publikováno v:
Solid-State Electronics. 31:1139-1150
A theoretical polysilicon contact with and without an interfacial layer has been optimized relative to the dopant concentration and thickness of the polysilicon layer, the underlying emitter profile, and, when necessary, transport parameters for the
Autor:
D.E. Burk, S.-Y. Yung
Publikováno v:
Solid-State Electronics. 31:1127-1138
The effective surface recombination velocity of different polysilicon contacts is inferred from a theoretical-experimental comparison of base (emitter recombination) currents as a function of temperature. For the polysilicon contacts, specially proce