Výsledky vyhledávání - "S. Y. Narayan"

2.78 μm InGaAsSb/AlGaAsSb multiple quantum-well lasers with metastable InGaAsSb wells grown by molecular beam epitaxy

Autor: P. K. York, Ramon U. Martinelli, R.J. Menna, Hao Lee, S. Y. Narayan, D. Garbuzov

Publikováno v: Journal of Crystal Growth. 150:1354-1357

Multiple quantum-well (MQW) lasers with metastable InGaAsSb quantum wells and AlGaAsSb barriers and claddings were grown on n+−GaSb(100) substrates by molecular beam epitaxy. The lasers exhibited a lasing wavelength of 2.78 μm and pulsed operation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::36b6d3dfd164db8ebd997433bb9baf2c
https://doi.org/10.1016/0022-0248(95)80159-a

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4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes

Autor: H. Lee, L. A. DiMarco, R. J. Matarese, Pamela K. York, Ramon U. Martinelli, R. J. Menna, M. G. Harvey, John C. Connolly, S. Y. Narayan, D. Z. Garbuzov

Publikováno v: Applied Physics Letters. 70:2931-2933

AlGaAsSb/InGaAsSb single-quantum-well (SQW) laser diodes emitting at 2 μm were fabricated and tested. At 10–15 °C, the uncoated SQW lasers with 2–3 mm cavity lengths exhibit a threshold current density of 115 A/cm2, a continuous-wave output pow

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0fc4233daff6b8c725ff277e41695e4e
https://doi.org/10.1063/1.118747

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Ultralow‐loss broadened‐waveguide high‐power 2 μm AlGaAsSb/InGaAsSb/GaSb separate‐confinement quantum‐well lasers

Autor: S. Y. Narayan, H. Lee, Pamela K. York, R. J. Menna, D. Z. Garbuzov, Ramon U. Martinelli, John C. Connolly

Publikováno v: Applied Physics Letters. 69:2006-2008

Broadening the waveguides of 2 μm AlGaAsSb/InGaAsSb separate‐confinement multiquantum‐well lasers decreases their internal losses to 2 cm−1, while threshold current densities remain as low as 300 A/cm2. The consequently high cw differential ef

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb27b20f8e35cdc12f6a60d5552e390f
https://doi.org/10.1063/1.116861

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2.7‐μm InGaAsSb/AlGaAsSb laser diodes with continuous‐wave operation up to −39 °C

Autor: John C. Connolly, R. J. Menna, S. Y. Narayan, D. Z. Garbuzov, Ramon U. Martinelli, H. Lee, P. K. York

Publikováno v: Applied Physics Letters. 67:1346-1348

We have demonstrated continuous wave operation of 2.7‐μm InGaAsSb/AlGaAsSb multiquantum‐well diode lasers up to a temperature of 234 K (−39 °C). These devices were grown by molecular‐beam‐epitaxy. They have a tendency to operate in a domi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7894b4b42e0a4f84a7beed32264de6bd
https://doi.org/10.1063/1.115546

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Room‐temperature 2.78 μm AlGaAsSb/InGaAsSb quantum‐well lasers

Autor: Pamela K. York, R. J. Menna, John C. Connolly, D. Z. Garbuzov, Ramon U. Martinelli, H. Lee, S. Y. Narayan

Publikováno v: Applied Physics Letters. 66:1942-1944

We describe room‐temperature 2.78 μm AlGaAsSb/InGaAsSb multiquantum well lasers. Pulsed laser operation was observed at 15 °C with a threshold current of 1.1 A (10 kA/cm2), and a maximum power output of 30 mW, and a maximum differential quantum e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::68cb64371224c6734af87f1e227bb911
https://doi.org/10.1063/1.113284

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Rapid capless annealing of28Si,64Zn, and9Be implants in GaAs

Autor: S. G. Liu, S. Y. Narayan

Publikováno v: Journal of Electronic Materials. 13:897-911

We report the use of tungsten-halogen lamps for rapid (−10 s) thermal annealing of ion-implanted (100) GaAs under AsH3/Ar and N2 atmospheres. Annealing under flowing AsH3/Ar was carried out without wafer encapsulation. Rapid capless annealing activ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::002df103aaced4cbff947660fd8d4350
https://doi.org/10.1007/bf02655306

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28Si implantation into40Ar implant‐pretreated semi‐insulating GaAs substrates—mobility and activation efficiency enhancement

Autor: C. P. Wu, S. G. Liu, C. W. Magee, S. Y. Narayan

Publikováno v: Applied Physics Letters. 41:72-75

We describe a 750‐keV, 5–10×1012 cm−2 dose, 40Ar implant pretreatment for semi‐insulating (SI) GaAs substrates allowing generation of 28Si implanted n layers with higher mobility and/or activation efficiency. This effect was observed in Brid

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::424aa02b41526ac6ed30b097f7e8cc85
https://doi.org/10.1063/1.93293

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InP/Low-Temperature-Deposited SiO 2 Interface

Autor: P. D. Gardner, S. Y. Narayan

Publikováno v: SPIE Proceedings.

This paper describes the characteristics of the InP/low-temperature-deposited SiO2 MIS system, with emphasis on C-V hysteresis and drain current drift in InP MISFETs. The SiO2 was deposited using a low-pressure (2 Torr) Hg-assisted UV deposition syst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32b2d3d9a3034770b7ebf5cef9f7a8d9
https://doi.org/10.1117/12.962001

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Growth And Characterization Of GaAs, GaInAs, and GaInAsP for microwave applications

Autor: J. P. Paczkowski, S. T. Jolly, S. Y. Narayan, D.R. Capewell

Publikováno v: Semiconductor Growth Technology.

Vapor-phase epitaxy (VPE) systems for the growth of 1) GaAs on Cr-doped GaAs substrates, and 2) lattice matched GaInAs and GaInAsP on Fe-doped InP substrates are briefly described. Layer composition of the ternary and quaternary compounds were measur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b352ce7bc650219b44e5b19b9217620c
https://doi.org/10.1117/12.934279

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