Zobrazeno 1 - 10
of 16
pro vyhledávání: '"S. Wolfel"'
Autor:
Gerhard Lutz, Shuang-Nan Zhang, Lothar Strüder, S. Wolfel, Johannes Treis, Peter Lechner, Chen Zhang
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 588:389-396
The Depleted P-channel Field Effect Transistor (DEPFET) Macropixel detectors based on the combined detector/amplifier structure have been designed for X-ray spectroscopy applications at the Max-Planck Institute (MPI) Semiconductor Laboratory. Prototy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8033ced5c2b12b2e63d68aca4816eeca
https://doi.org/10.1016/j.nima.2008.02.002
https://doi.org/10.1016/j.nima.2008.02.002
Autor:
Sven Herrmann, Lothar Strüder, Johannes Treis, Gerhard Lutz, S. Wolfel, Peter Lechner, Rainer Richter, Matteo Porro
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 566:536-539
We demonstrate the use of a silicon detector based on a DEPFET device, with sub-electron readout noise ( 0.6 e - ENC). The so-called repetitive non-destructive readout (RNDR) detector was realised by putting two single DEPFETs next to each other, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7874a4dd4f1ae261c9f0bd3683321898
https://doi.org/10.1016/j.nima.2006.06.060
https://doi.org/10.1016/j.nima.2006.06.060
Autor:
L. Struder, Sven Herrmann, Peter Fischer, D. Herz, Peter Lechner, R. Kohrs, Ladislav Andricek, H. G. Moser, K. Heinzinger, C. Sandow, Hans Krüger, Norbert Wermes, Robert Richter, Johannes Treis, M. Trimpl, M. Schnecke, S. Wolfel, G. Lutz, F. Giesen, L. Reuen, Jaap Velthuis, Ivan Peric, M. Karagounis, E.v. Törne, Florian Schopper
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 565:165-171
A new generation of MOS-type DEPFET active pixel sensors in double metal/double poly technology with /spl sim/25 /spl mu/m pixel size has been developed to meet the requirements of the vertex detector at the ILC (International Linear Collider). The p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c43e933c9b03b5b12d424e7332cdf10
https://doi.org/10.1016/j.nima.2006.05.045
https://doi.org/10.1016/j.nima.2006.05.045
Publikováno v:
Sensors, Vol 16, Iss 5, p 608 (2016)
Sensors (Basel, Switzerland)
Sensors; Volume 16; Issue 5; Pages: 608
Sensors (Basel, Switzerland)
Sensors; Volume 16; Issue 5; Pages: 608
Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1af5181b889db5f43c2a160394c4d04e
https://doi.org/10.3390/s16050608
https://doi.org/10.3390/s16050608
Autor:
S. Wolfel, Peter Lechner, G. Lutz, Matteo Porro, G. de Vita, Carlo Fiorini, Sven Herrmann, L. Striider, Johannes Treis, Robert Richter, Luca Bombelli, E.L. Vaquero
We present a new CCD detector system for single optical photon and low light sources imaging. PnCCDs produced in the double sided silicon technology of the Max-Planck-Institut Halbleiterlabor have been operating for long in the field of X-ray imaging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7b00c250b6d2d4e05b2553d6853dbb7
http://hdl.handle.net/11311/538642
http://hdl.handle.net/11311/538642
Autor:
Luca Bombelli, S. Wolfel, Matteo Porro, A. Wassatsch, G. de Vita, Sven Herrmann, Johannes Treis, Carlo Fiorini, G. Segneri, Lothar Strüder
Publikováno v:
2007 IEEE Nuclear Science Symposium Conference Record.
ASTEROID is a new 64 channel ASIC developed to read out a DEPFET macropixel array. This sensor will be part of the MIXS instrument that will be used in the ESA's BepiColombo Mercury exploration mission. The detector will operate in an environment wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e43571c91929f984ce5a82fc1bc5ada3
https://doi.org/10.1109/nssmic.2007.4436625
https://doi.org/10.1109/nssmic.2007.4436625
Autor:
Gerhard Lutz, Sven Herrmann, R.H. Richter, Peter Lechner, Lothar Strüder, Matteo Porro, Johannes Treis, S. Wolfel
In this work we demonstrate theoretically and experimentally the capability to reduce the readout noise of an optical and X-ray photon detector based on the semiconductor DEPFET device below a level of only 0.3e- ENC (equivalent noise charge). The re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::368de31e57781aebde360ba53aa71a1e
http://hdl.handle.net/10278/3755715
http://hdl.handle.net/10278/3755715
Autor:
S. Wolfel, Sven Herrmann, Ladislav Andricek, Peter Lechner, T. Lauf, Gerhard Schaller, L. Struder, G. Segneri, Florian Schopper, Johannes Treis, Matteo Porro, K. Heinzinger, Robert Richter, G. Lutz, J. M. Mas-Hesse, C. H. Whitford, M. Schnecke, T. Stevenson, Heike Soltau
Publikováno v:
2007 IEEE Nuclear Science Symposium Conference Record.
The combined Detector-Amplifier structure DEPFET (Depleted P-channel FET) is a promising new building block for large area silicon detector devices, e.g. in X-ray astronomy and high energy physics. The DEPFET structure combines excellent energy resol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a178356029de57f85fe27820d874e019
https://doi.org/10.1109/nssmic.2007.4436593
https://doi.org/10.1109/nssmic.2007.4436593
Autor:
R.H. Richter, G. Lutz, Peter Lechner, Matteo Porro, S. Wolfel, Lothar Strüder, Johannes Treis, Sven Herrmann
Publikováno v:
2007 IEEE Nuclear Science Symposium Conference Record.
The DEPFET detector-amplifier structure invented 1985 by J. Kemmer and G. Lutz possesses several unique properties which make it extremely interesting as readout element in semiconductor detectors and in particular as building block of semiconductor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abc6e0094f8882182d1adce0023256fe
https://doi.org/10.1109/nssmic.2007.4437181
https://doi.org/10.1109/nssmic.2007.4437181
Autor:
Gerhard Lutz, Peter Lechner, Rainer Richter, Matteo Porro, S. Wolfel, Sven Herrmann, Lothar Strüder, Johannes Treis
Publikováno v:
2006 IEEE Nuclear Science Symposium Conference Record.
In this work we demonstrate theoretically and experimentally the capability to reduce the readout noise of an optical and X-ray photon detector based on the semiconductor DEPFET device below a level of only 0.3e- ENC (equivalent noise charge). The re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f191d6e2e7b06fdfec218b8f35b4dbeb
https://doi.org/10.1109/nssmic.2006.356109
https://doi.org/10.1109/nssmic.2006.356109