Zobrazeno 1 - 7
of 7
pro vyhledávání: '"S. W. Novak"'
Autor:
Robert P. Devaty, Wolfgang J. Choyke, J. Devrajan, M. Yoganathan, Andrew J. Steckl, S. W. Novak
Publikováno v:
Journal of Electronic Materials. 25:869-873
The effect of post-implantation anneal on erbium-doped 6H-SiC has been investigated. 6H-SiC has been implanted with 330 keV Er+ at a dose of 1 × 1013 /cm2. Er depth profiles were obtained by secondary ion mass spectrometry (SIMS). The as-implanted E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ad5676e9b889dda13afc5d599a171e6
https://doi.org/10.1007/bf02666651
https://doi.org/10.1007/bf02666651
Autor:
R. G. Wilson, S. W. Novak
Publikováno v:
Journal of Applied Physics. 69:466-474
We have measured and plotted the dependence of secondary‐ion‐mass spectrometry (SIMS) relative sensitivity factor (RSF) on electron affinity and ionization potential of up to 74 elements implanted into 23 materials, measured using oxygen‐ion bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2053a249a12fad7bf831d38b84efe98
https://doi.org/10.1063/1.347687
https://doi.org/10.1063/1.347687
Autor:
R. G. Wilson, S. W. Novak
Publikováno v:
Journal of Applied Physics. 69:463-465
We have measured normalized positive ion yields of more than 20 elements implanted into SiO2 and compare them with positive ion yields of the same elements sputtered from Si by oxygen and argon ion bombardment. All measurements were made using simila
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f50fec20ed33304808ea24187065a1fd
https://doi.org/10.1063/1.347686
https://doi.org/10.1063/1.347686
Autor:
Igor L. Kuskovsky, Q. Zhang, Ildar Salakhutdinov, Uttam Manna, Gertrude F. Neumark, Kathleen Dunn, Ismail C. Noyan, S. W. Novak, Richard Moug, Maria C. Tamargo
Publikováno v:
Journal of Applied Physics. 111:033516
We report the structural properties and spatial ordering of multilayer ZnMgTe quantum dots (QDs) embedded in ZnSe, where sub-monolayer quantities of Mg were introduced periodically during growth in order to reduce the valence band offset of ZnTe QDs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c42be1f3e85c082d781300cbf8f4dd90
https://doi.org/10.1063/1.3681812
https://doi.org/10.1063/1.3681812
Publikováno v:
OSA Annual Meeting.
Extraordinary refractive-index profiles for a set of annealed proton-exchanged z-cut LiNbO3 wafers were determined, based on optical prism-coupling measurements, and fitted with a single Gaussian diffusion expression.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0e67ad4ec31506f16ad63619379de4d
https://doi.org/10.1364/oam.1993.wo.3
https://doi.org/10.1364/oam.1993.wo.3
Autor:
Ahn Goo Choo, Andrew J. Steckl, R. M. Kolbas, A. Ezis, P. P. Pronko, Howard E. Jackson, S. W. Novak, P. Chen, Joseph T. Boyd
Publikováno v:
MRS Proceedings. 281
Results are presented on the fabrication of optical gratings on an Al0.3Ga0.7As/GaAs superlattice (SL) with equal 3.5 nm barrier and well widths, by using locally FIB-enhanced mixing. As the first step, the mechanism of the mixing was studied. Si++ w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca131c213e1326fa900d30e70598571
https://doi.org/10.1557/proc-281-319
https://doi.org/10.1557/proc-281-319
Autor:
S. w. Novak, R . G. Wilson
Publikováno v:
SPIE Proceedings.
Profiles measured using secondary ion mass spectrometry for random and channeled implants of column II, IV, and VI elements in GaP, GaAs, InP, and InSb are decsribed. Depths and influence of furnace and lamp annealing on these profiles are emphasized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ee44b39e3bcbea0e3e73893db16c7dd
https://doi.org/10.1117/12.941045
https://doi.org/10.1117/12.941045