Výsledky vyhledávání - "S. W. Downey"

Diagnostic studies of aluminum etching in an inductively coupled plasma system: Determination of electron temperatures and connections to plasma-induced damage

Autor: Nace Layadi, J. I. Colonell, Vincent M. Donnelly, M. V. Malyshev, S. W. Downey

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:849-859

Using trace rare gases-optical emission spectroscopy (TRG-OES) and Langmuir probe measurements, electron temperatures (Te) were obtained in Cl2/BCl3/N2 plasmas in an inductively coupled plasma system, under typical processing conditions for metal etc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::323cacc0bd0701b0437f1397a84c3c42
https://doi.org/10.1116/1.582266

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Characterization of InGaAsP materials by ultrahigh intensity post-ionization mass spectrometry: Relative sensitivity factors for zinc versus bulk constituents

Autor: S. W. Downey, M. L. Wise, A. B. Emerson

Publikováno v: Journal of Materials Research. 11:321-324

The first relative sensitivity factors (RSF) for detecting the major and dopant elements of optical materials by ultrahigh intensity post-ionization (UHIPI) mass spectrometry are determined. The post-ionization is performed using a single laser wavel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3b7b897eb8dfe5c0965bd103324fac4d
https://doi.org/10.1557/jmr.1996.0037

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Detection of Sputtered Neutrals by Ultrahigh-Intensity Postionization in the Near-Infrared

Autor: A. Bruce. Emerson, S. W. Downey, Michael L. Wise

Publikováno v: Analytical Chemistry. 67:4033-4039

Characterization of sputtered semiconductor materials by ultrahigh-intensity postionization has been performed utilizing a high repetition rate, regeneratively amplified, ultrafast Ti-sapphire laser coupled with a modified magnetic-sector SIMS instru

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7edf044f68f53be6d2f84c813d8dffa8
https://doi.org/10.1021/ac00118a001

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Single Particle Characterization by Time-of-Flight Mass Spectrometry

Autor: S. W. Downey, D. J. Siconolfi, A. M. Mujsce, J. D. Sinclair, A. G. Swanson, A. B. Emerson, W. D. Reents, A. J. Muller

Publikováno v: Aerosol Science and Technology. 23:263-270

We have built a particle analyzer capable of real-time detection and characterization of individual particles. Particle analysis is accomplished by pulsed laser ablation of a particle followed by time-of-flight mass spectrometry of the resulting atom

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ea730a3884c4b17a4de22efb6708e1e5
https://doi.org/10.1080/02786829508965311

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Real-time compositional analysis of submicrometre particles

Autor: A. G. Swanson, J. D. Sinclair, S. W. Downey, D. J. Siconolfi, A. M. Mujsce, A. B. Emerson, W. D. Reents, A. J. Muller

Publikováno v: Plasma Sources Science and Technology. 3:369-372

A particle analyser is described that simultaneously detects and characterizes 10 mu m diameter particles independent of particle composition in real time. No previous instrument has been able to perform these functions simultaneously. Our design use

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7578138ebf4e3192cd5e0650157f6a31
https://doi.org/10.1088/0963-0252/3/3/020

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Improved Precision in a Resonance Ionization Mass Spectrometer by the Use of Stark-Shifted Spectral Lines as a Probe for Extraction Field

Autor: T. R. Fullowan, A. B. Emerson, S. W. Downey

Publikováno v: Applied Spectroscopy. 47:1245-1250

High-lying (Rydberg) electronic levels of sputtered Na atoms are spectrally shifted by the strong ion extracting electric field (⩾12 kV/cm) present in a resonance ionization mass spectrometer (Stark effect). The Stark-shifted lines are a beneficial

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::252d4f9428b0db746022a17e800b4ea9
https://doi.org/10.1366/0003702934067883

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Sputtering effects in Si, SiO2 and the Si/SiO2 interface

Autor: S. W. Downey, A. B. Emerson

Publikováno v: Surface and Interface Analysis. 20:53-59

Resonance ionization mass spectrometry (RIMS) is used to determine the optimal sputtering conditions for sampling Si and SiO2 in depth profiling applications. Silicon RIMS signals are proportional to the Si concentration in these materials. Molecular

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2c0832ba6016e9d47cd311f0f3d15cd4
https://doi.org/10.1002/sia.740200109

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Resonance ionization mass spectrometry of AI(x)Ga(1-x)As: depth resolution, sensitivity, and matrix effects

Autor: S. W. Downey, Erdmann Frederick Schubert, J. M. Kuo, Rose Kopf

Publikováno v: Applied optics. 29(33)

Resonance ionization mass spectrometry (RIMS) of neutral atoms sputtered from III-V compound semiconductors such as Al(x)Ga(1-x)As provides information that is complementary to secondary ion mass spectrometry with the added advantages of rejecting ma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4100534147ae516746a04e4d42bdbbc3
https://pubmed.ncbi.nlm.nih.gov/20577488

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Si(111)(7×7) dangling bond contribution to surface recombination

Autor: A. vom Felde, Julia W. P. Hsu, S. W. Downey, C.C. Bahr, M. J. Cardillo, G. S. Higashi

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:985-989

We correlate photoconductivity with surface characterization in order to probe the influence of surface properties of Si(111) on carrier dynamics. Results on the clean (7×7) reconstructed surface indicate that carrier recombination at this surface i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e57c52b16b064fd4e78b4646d9d94578
https://doi.org/10.1116/1.577891

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Surface effects on carrier dynamics: photoconductivity studies on Si (111)

Autor: C.C. Bahr, Julia W. P. Hsu, G. S. Higashi, S. W. Downey, A. vom Felde, M. J. Cardillo

Publikováno v: Journal of Applied Physics. 71:4983-4990

We correlate photoconductivity with surface characterization in order to probe the influence of different surface properties of Si (111) on electron‐hole dynamics. Photoconductivity data show that the carrier recombination is influenced strongly by

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02542aee6b385188b5b57ee70f4ee2a5
https://doi.org/10.1063/1.350597

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