Zobrazeno 1 - 10
of 27
pro vyhledávání: '"S. W. Bedell"'
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 030701-030701-12 (2019)
Silicon based complementary metal-oxide-semiconductor field-effect-transistor (CMOSFET) technology has continued to progress unabated for last five decades despite various challenges arising due to extreme scaling. Pervasive use of Si technology is e
Externí odkaz:
https://doaj.org/article/41d44353d20c4e49a94c482a47b481b2
Publikováno v:
Solid-State Electronics. 117:117-122
In this work, we demonstrate mechanically flexible extremely thin silicon on insulator (ETSOI) ring oscillators with a stage delay of ∼16 ps at a power supply voltage of 0.9 V. Extensive electrical analyses of the flexible ETSOI devices reveal the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f953c504f69e069a7c8f0544882dbc8
https://doi.org/10.1016/j.sse.2015.11.023
https://doi.org/10.1016/j.sse.2015.11.023
Autor:
Christos D. Dimitrakopoulos, Cheng-Wei Cheng, Hongsik Park, Jeehwan Kim, Kathleen B. Reuter, D. K. Sadana, Can Bayram, John A. Ott, S. W. Bedell
Publikováno v:
2017 IEEE Photonics Conference (IPC).
Fully functional thin-film blue LED was fabricated by novel means of (1) performing epitaxial growth of a single crystalline InGaN/GaN heterostructure on a recycled graphene/SiC substrate (2) followed by release and transfer of the heterostructure.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9565305d482d9bd8bbe773044b74beb5
https://doi.org/10.1109/ipcon.2017.8115996
https://doi.org/10.1109/ipcon.2017.8115996
Autor:
S. W. Bedell, Bahman Hekmatshoar, Davood Shahrjerdi, Devendra K. Sadana, John A. Ott, Marinus Hopstaken
Publikováno v:
ECS Transactions. 45:31-37
We present a unique ultra low-temperature plasma enhanced chemical vapor deposition process that enables epitaxial growth of compressively strained silicon directly on silicon substrates. The epitaxial layers were structurally examined using high-res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9349fff7996a700832484a81c9162fb
https://doi.org/10.1149/1.3700936
https://doi.org/10.1149/1.3700936
Autor:
D. K. Sadana, S. W. Bedell, K. Fogel, Nicolas Daval, Ali Khakifirooz, Anthony G. Domenicucci, Pranita Kulkarni
Publikováno v:
Microelectronic Engineering. 88:324-330
A thin body (fully depleted) strained SGOI device structure (FDSGOI), and a strained SiGe channel layer on SOI, were fabricated using scaled [email protected] gate dielectrics and metal gate technology. The uniaxial strain effect and corresponding dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11b1584d228d5cf305424b4280e5d572
https://doi.org/10.1016/j.mee.2010.08.002
https://doi.org/10.1016/j.mee.2010.08.002
Publikováno v:
Journal of Crystal Growth. 316:101-105
A commercially available 300 mm single-wafer UHV-CVD reactor was used to grow strained pseudomorphic Si 0.79 Ge 0.21 layers beyond the critical thickness on Si substrates. A unique in situ method of introducing controlled amounts of oxygen at the gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfb6032fb5e351617db8e171223c4a20
https://doi.org/10.1016/j.jcrysgro.2010.12.068
https://doi.org/10.1016/j.jcrysgro.2010.12.068
Autor:
S.R. Shinde, D. K. Sadana, T. Seino, T. Tsunoda, Alexander Reznicek, S. W. Bedell, J. Nakatsuru, A. Venkateshan, Thomas N. Adam
Publikováno v:
Journal of Crystal Growth. 312:3473-3478
Epitaxial (1 0 0) silicon layers were grown at temperatures ranging from 500 to 800 °C in a commercial cold-wall type UHV/CVD reactor at pressures less than 7×10 −5 Torr. The substrates were 300 mm SIMOX SOI wafers and spectroscopic ellipsometry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::199dfba4bbb0d8b183bf9c6f43f13d0f
https://doi.org/10.1016/j.jcrysgro.2010.09.012
https://doi.org/10.1016/j.jcrysgro.2010.09.012
Publikováno v:
Materials Science in Semiconductor Processing. 9:423-436
One of the main challenges to creating a GeOI-based FET is simply to create a high-quality single-crystal layer for the channel material. Due to the low cost and wide availability of Si substrates, the most popular approach to Ge FET material develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b2fbeb0877732582c1fe0217d768ad
https://doi.org/10.1016/j.mssp.2006.08.001
https://doi.org/10.1016/j.mssp.2006.08.001
Autor:
M. Guillorn, Jeffrey W. Sleight, Jemima Gonsalves, Christian Lavoie, Sebastian Engelmann, Siyuranga O. Koswatta, Fei Liu, Zhen Zhang, J. Newbury, Ashish Baraskar, Paul M. Solomon, A. Pyzyna, Yu Zhu, Wei Song, Cyril Cabral, S. W. Bedell, Michael F. Lofaro, Marinus Hopstaken, Li Yang, Mark Raymond, Kenneth P. Rodbell, Ahmet S. Ozcan, C. Witt
Publikováno v:
IEEE Electron Device Letters. 34:723-725
Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities ~1.5 × 10-9 Ω· cm2 are extracted from Ni(Pt) silicide contacts on in situ boron-doped Si0.7Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9ccd05218821402c0c44fc7f2bd365c
https://doi.org/10.1109/led.2013.2257664
https://doi.org/10.1109/led.2013.2257664
Publikováno v:
ECS Solid State Letters. 2:N8-N10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8908bd4015c68eaf38e2e625ec52e4b
https://doi.org/10.1149/2.005302ssl
https://doi.org/10.1149/2.005302ssl