Zobrazeno 1 - 10
of 94
pro vyhledávání: '"S. Vicknesh"'
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
We have investigated the DC and RF performances of AlGaN/GaN HEMTs on CVD-Diamond at high power density continuous wave (CW) operating condition. About 4-times improved DC and RF performances were observed in GaN/Dia HEMTs, which was due to the lower
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::903dd83fb651ece78ad87b72b688cc79
https://doi.org/10.1109/edtm.2019.8731089
https://doi.org/10.1109/edtm.2019.8731089
Publikováno v:
physica status solidi c. 10:1421-1425
We have studied the drain current dispersion characteristics of conventional AlGaN/GaN HEMTs and SiN/Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMT) fabricated on silicon substrate. The fabricated MISHEMT ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83ca802e48484cd497df540d32959cde
https://doi.org/10.1002/pssc.201300219
https://doi.org/10.1002/pssc.201300219
Autor:
R. Grover, Soo Jin Chua, S. R. Shannigrahi, J. N. Tan, S. A. Oh, Sukant K. Tripathy, Bhupendra Kumar, Lianshan Wang, S. Vicknesh, A. Ramam, J. Arokiaraj, K. Y. Zang, Hao Gong, Vivian Kaixin Lin
Publikováno v:
physica status solidi (a). 205:1168-1172
Using a combination of selective dry etching techniques, surface micro-machined GaN and ZnO micromechanical structures are demonstrated on silicon-on-insulator (SOI) substrates. The dry releasing technique employs a controlled gas phase pulse etching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c716f16351c6aacf4b766c34847a478
https://doi.org/10.1002/pssa.200723611
https://doi.org/10.1002/pssa.200723611
Publikováno v:
Microsystem Technologies. 14:331-341
A novel InP-based microactuator, which is actuated by electrostatic means, has been proposed, designed, fabricated, and characterized for tuning applications in the 1.5 μm wavelength domains. Its structural design is based on the global optimization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1de2048021086e937516b0510640a59d
https://doi.org/10.1007/s00542-007-0429-7
https://doi.org/10.1007/s00542-007-0429-7
Publikováno v:
Applied Surface Science. 253:1243-1246
Using a low-temperature wafer bonding process, InP substrates are bonded to silicon-on-insulator (SOI) substrates at 220 °C. A combination of oxygen plasma and chemical treatment results in a direct contact bonding at room temperature. After the bon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0c119ab97e259b07b2cf2d4fd2df653
https://doi.org/10.1016/j.apsusc.2006.01.071
https://doi.org/10.1016/j.apsusc.2006.01.071
Publikováno v:
Journal of Physics: Conference Series. 34:404-409
Wafer bonding or wafer fusion is a method of combining two same or dissimilar materials, either atomically or by means of adhesive. In this paper we report a new process to bond thin film Indium Phosphide (InP) to oxidized Silicon (100) substrates at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f66753a80843df063ef9d09acaea8b68
https://doi.org/10.1088/1742-6596/34/1/066
https://doi.org/10.1088/1742-6596/34/1/066
Publikováno v:
Electrochemical and Solid-State Letters. 8:G115-G118
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efd0bc947a62142e6a033aba447c8633
https://doi.org/10.1149/1.1887245
https://doi.org/10.1149/1.1887245
Publikováno v:
IEEE Electron Device Letters. 34:1364-1366
Enhanced OFF -state breakdown voltage has been observed in ammonium sulfide [(NH4)2Sx]-treated AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate without compromising the unit gain cutoff frequencies. About six times higher OFF -sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c1fdba6db3511f7477d8176e656276
https://doi.org/10.1109/led.2013.2279882
https://doi.org/10.1109/led.2013.2279882
Autor:
A. Ramam, S. Vicknesh
Publikováno v:
Journal of The Electrochemical Society. 151:C772-C780
A systematic study of the etching of InP material by hydrogen bromide (HBr)-based chemistry is conducted using the inductively coupled plasma (ICP) technique. Sidewall profiles, material selectivity, surface morphologies, and the residual species due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84bc7bebf38a5273e89e035c48c3fcb3
https://doi.org/10.1149/1.1812731
https://doi.org/10.1149/1.1812731
Autor:
Binit Syamal, C. M. Manoj Kumar, K. Ranjan, Geok Ing Ng, S. C. Foo, M. J. Anand, S. Vicknesh, Xing Zhou, Subramaniam Arulkumaran
The influence of electric field (EF) on the dynamic ON-resistance (dyn-R DS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b78cd2df57d0fc76e15801fa3d95bd5a
http://hdl.handle.net/10220/25288
http://hdl.handle.net/10220/25288
