Zobrazeno 1 - 10
of 27
pro vyhledávání: '"S. Verdonckt-Vandebroek"'
Autor:
E. Peeters, S. Verdonckt-Vandebroek
Publikováno v:
IEEE Circuits and Devices Magazine. 13:19-23
Micromachining and microelectromechanical system (MEMS) technology have enabled the unprecedented cost/performance ratio of thermal ink jet (TIJ) products that currently dominate the desktop color printing market. The generic TIJ operating principles
Autor:
Phillip J. Restle, S. Verdonckt-Vandebroek, David L. Harame, Jeffrey B. Johnson, J.M.C. Stork, Emmanuel F. Crabbe, Bernard S. Meyerson
Publikováno v:
IEEE Transactions on Electron Devices. 41:90-101
The advances in the growth of pseudomorphic silicon-germanium epitaxial layers combined with the strong need for high-speed complementary circuits have led to increased interest in silicon-based heterojunction field-effect transistors. Metal-oxide-se
Publikováno v:
IEEE Transactions on Electron Devices. 38:2487-2496
A hybrid-mode device based on a standard submicrometer CMOS technology is presented. The device is essentially a MOSFET in which the gate and the well are internally connected to form the base of a lateral bipolar junction transistor (BJT). At low co
Publikováno v:
50th Annual Device Research Conference.
Publikováno v:
Technical Digest., International Electron Devices Meeting.
A novel local interconnect technology utilizing polysilicon strapped with selective CVD (chemical vapor deposition) tungsten (W) has been developed for advanced CMOS applications. Problems associated with etching of a local interconnect material do n
Publikováno v:
Technical Digest., International Electron Devices Meeting.
The authors describe a submicron BiMOS process in which the lateral BJTs (bipolar junction transistors) are so similar to the MOSFETs that no extra process steps are needed. A lateral npn BJT with beta higher than 1000 has been demonstrated. A latera
Autor:
Paul Ronsheim, M.J. Saccamango, J.Y.-C. Sun, James H. Comfort, S. Verdonckt-Vandebroek, S. Ratanaphanyarat, Jeffrey B. Johnson, Phillip J. Restle, David L. Harame, A. Acovic, E. Ganin, S.A. Furkay, Stephan A. Cohen
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
A novel antimony-preamorphized phosphorus process (Sb/P) for NMOS source/drain formation is presented. It is demonstrated that very shallow ( >
Autor:
B.S. Meyerson, S. Verdonckt-Vandebroek, J.M.C. Stork, D.L. Harame, E.F. Crabbe, Phillip J. Restle
Publikováno v:
[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
Important SiGe HFET design issues are discussed and confirmed after the fabrication of subsurface graded SiGe-channel modulation-doped p-MOSFETs. By grading the SiGe channel profile, the location of the carrier flow can be controlled and the transcon
Publikováno v:
Proceedings on Bipolar Circuits and Technology Meeting.
The authors present a BJT (bipolar junction transistor) which is fabricated using a bulk CMOS technology. The device is essentially a MOSFET in which the gate and the well are internally connected to form the base of a lateral BJT. Complementary NPN
Autor:
A.C. Megdanis, Emmanuel F. Crabbe, Phillip J. Restle, S. Verdonckt-Vandebroek, C.L. Stanis, A.C. Warren, J.M.C. Stork, David L. Harame, Bernard S. Meyerson, A.A. Bright, Gerrit Kroesen
Publikováno v:
IEEE Electron Device Letters. 12:447-449
A novel subsurface SiGe-channel p-MOSFET is demonstrated in which modulation doping is used to control the threshold voltage without degrading the channel mobility. A novel device design consisting of a graded SiGe channel, an n/sup +/ polysilicon ga