Zobrazeno 1 - 10
of 117
pro vyhledávání: '"S. Vanhaelemeersch"'
Autor:
Johan Vertommen, Stephan Beckx, V. Paraschiv, B. Coenegrachts, Serge Biesemans, K. Henson, S. Degendt, Patrick Jaenen, S. Vanhaelemeersch, S. Locorotondo, M. Demand, Denis Shamiryan, Werner Boullart, Martine Claes
Publikováno v:
Microelectronics Reliability. 45:1007-1011
We report on gate patterning development for the 45 nm node and beyond. Both poly-Si and different metal gates in combination with medium- k and high- k dielectrics have been defined. Source/drain silicon recess has been characterized for different s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::108e65e8b0860190dd7efdce10c52439
https://doi.org/10.1016/j.microrel.2004.11.005
https://doi.org/10.1016/j.microrel.2004.11.005
Autor:
Martine Claes, V. Paraschiv, S. Vanhaelemeersch, Mikhail R. Baklanov, Stefan De Gendt, Werner Boullart
Publikováno v:
Solid State Phenomena. :97-102
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05d2e80d2d6054ac72ece747fb6d0685
https://doi.org/10.4028/www.scientific.net/ssp.103-104.97
https://doi.org/10.4028/www.scientific.net/ssp.103-104.97
Autor:
S. Vanhaelemeersch, Marc Van Cauwenberghe, Thierry Conard, D. Hendrickx, M. Schmidt, Michele Stucchi, Jan Van Aelst, Werner Boullart, Geert Mannaert
Publikováno v:
Solid State Phenomena. 92:267-270
The work described below deals with the process development for stripping the resist and etching the SiC barrier layer from oxide and low-k damascene structures. In the damascene patterning, SiC is used as a barrier layer that prevents Cu to diffuse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a797dcf2f63f446e344c0c5d84c261d
https://doi.org/10.4028/www.scientific.net/ssp.92.267
https://doi.org/10.4028/www.scientific.net/ssp.92.267
Autor:
A Das, T Kokubo, Y Furukawa, H Struyf, I Vos, B Sijmus, F Iacopi, J Van. Aelst, Q.T Le, L Carbonell, S Brongersma, M Maenhoudt, Z Tokei, I Vervoort, E Sleeckx, M Stucchi, M Schaekers, W Boullart, E Rosseel, M Van Hove, S Vanhaelemeersch, A Shiota, K Maex
Publikováno v:
Microelectronic Engineering. 64:25-33
Increasing the circuit density is driving the need for lower permittivity interlayer dielectrics (ILD) to reduce the capacitance between long parallel lines. JSR's LKD-5109, an MSQ-based material, is one of such low-k materials for the 65-nm node. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::418d616414353ade522e569289c856b9
https://doi.org/10.1016/s0167-9317(02)00768-2
https://doi.org/10.1016/s0167-9317(02)00768-2
Autor:
Y Travaly, B Eyckens, L Carbonel, A Rothschild, Q.T Le, S.H Brongersma, I Ciofi, H Struyf, Y Furukawa, M Stucchi, M Schaekers, H Bender, E Rosseel, S Vanhaelemeersch, K Maex, F Gaillard, L Van Autryve, P Rabinzohn
Publikováno v:
Microelectronic Engineering. 64:367-374
The impact of material/process interactions on low temperature CVD-O3 low-k dielectric film properties are presented. The film under investigation is deposited following a three-step process consisting of a low temperature chemical vapor deposition (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5cb1ae36b0c295b3eaf81a051f0201d
https://doi.org/10.1016/s0167-9317(02)00810-9
https://doi.org/10.1016/s0167-9317(02)00810-9
Publikováno v:
Solid State Phenomena. :89-92
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec10f4bb0bf65d8f93af2df9a3769cec
https://doi.org/10.4028/www.scientific.net/ssp.65-66.89
https://doi.org/10.4028/www.scientific.net/ssp.65-66.89
Publikováno v:
Solid State Phenomena. :97-100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e3253e52c2692fcf2acc81f45cb6630
https://doi.org/10.4028/www.scientific.net/ssp.65-66.97
https://doi.org/10.4028/www.scientific.net/ssp.65-66.97
Publikováno v:
Solid State Phenomena. :153-156
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f68e221a133feb9cc1a372c4ef6f3970
https://doi.org/10.4028/www.scientific.net/ssp.65-66.153
https://doi.org/10.4028/www.scientific.net/ssp.65-66.153
Autor:
H.C Lee, S Vanhaelemeersch
Publikováno v:
Thin Solid Films. 320:147-150
In this paper, we present the study of the tungsten (W) etch rate as a function of different masking materials: Ti/TiN and SiO 2 . In addition, the impact of the W grain boundary orientation on the etch rate is established. With the use of a SiO 2 ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91a7a672776da46ee6df8684c5672671
https://doi.org/10.1016/s0040-6090(97)01079-1
https://doi.org/10.1016/s0040-6090(97)01079-1
Publikováno v:
The Journal of Physical Chemistry. 96:1257-1263
Rate coefficients of the elementary reactions of CF(X{sup 2}II, v=O) with O{sub 2}, F{sub 2}, Cl{sub 2}, and NO at T = 294 K and p = 2-10 Torr (He or Ar bath gas) have been determined for the first time, using laser photodissociation/laser induced in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24802098c26dda94320e392d755f71d3
https://doi.org/10.1021/j100182a043
https://doi.org/10.1021/j100182a043