Zobrazeno 1 - 10
of 124
pro vyhledávání: '"S. Van Huylenbroeck"'
Autor:
S. Van Huylenbroeck, Vladimir Cherman, Eric Beyne, X. Chang, Melina Lofrano, Herman Oprins, Kenneth June Rebibis, Mireia Bargallo Gonzalez, Gerald Beyer, G. Van der Plas
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
In this paper we address the thermal, mechanical and reliability performance of wafer-to-wafer hybrid bonded CMOS wafers manufactured using standard 65nm technology. Proprietary chip design includes different test structures which enable assessment o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dfbd36de2869391b4596fa08f6c3f49
https://doi.org/10.1109/ectc32862.2020.00092
https://doi.org/10.1109/ectc32862.2020.00092
Publikováno v:
International Symposium for Testing and Failure Analysis.
We report and demonstrate a new methodology for the localization of dielectric breakdown sites in through-silicon via (TSV) structures. We apply a combination of optical beam induced resistance change (OBIRCH) and mechanical/chemical chip deprocessin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b848a2d582cf76bf6966576208e76a1
https://doi.org/10.31399/asm.cp.istfa2019p0020
https://doi.org/10.31399/asm.cp.istfa2019p0020
Autor:
Davide Guermandi, S. Van Huylenbroeck, Peter Verheyen, P. De Heyn, Ashwyn Srinivasan, Caroline Demeurisse, Julien Bertheau, Andy Miller, M. Pantouvaki, S. Lardenois, P. Nolmans, Michal Rakowski, Kenneth June Rebibis, S. Balakrishnan, Y. Ban, Xiao Sun, Philippe Absil, Nicolas Pantano, Junwen He, Pieter Bex, Alain Phommahaxay, J. De Coster, J. Van Campenhout, L. Bogaerts, Dimitrios Velenis
Publikováno v:
45th European Conference on Optical Communication (ECOC 2019).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::707e6e03f40471f7edd5dc86f52b7206
https://doi.org/10.1049/cp.2019.0990
https://doi.org/10.1049/cp.2019.0990
Autor:
Yoojin Ban, Xiao Sun, Kenneth June Rebibis, L. Bogaerts, Michal Rakowski, Nicolas Pantano, Philippe Absil, Dimitrios Velenis, J. Van Campenhout, S. Lardenois, S. Balakrishnan, J. De Coster, S. Van Huylenbroeck, Caroline Demeurisse, Pieter Bex, Andy Miller, Bradley Snyder, M. Pantouvaki, P. Nolmans, P. De Heyn, Fumihiro Inoue, Ashwyn Srinivasan, Peter Verheyen
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
We demonstrate a microbump flip-chip integrated 14nm-FinFET CMOS-Silicon Photonics (SiPh) technology platform enabling ultra-low power Optical I/O transceivers with 1.6Tb/s/mm2 bandwidth density. The transmitter combines a differential FinFET driver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::424db2cf527f2a7f16f76bde203cfb38
https://doi.org/10.1109/vlsit.2018.8510668
https://doi.org/10.1109/vlsit.2018.8510668
Publikováno v:
2017 IEEE 67th Electronic Components and Technology Conference (ECTC).
This paper applies for the first time an RF equivalent of the four-point probe Kelvin DC technique to characterize the TSV inductance. This RF approach is based on two-port S-parameter measurements over a wide frequency range using a vector network a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::017fdfd50fc0b73f89059fd867178452
https://doi.org/10.1109/ectc.2017.142
https://doi.org/10.1109/ectc.2017.142
Akademický článek
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Autor:
A. Mizutani, Samuel Suhard, A. Iwasaki, S. Draper, Y. Li, T. Dory, Frank Holsteyns, S. Van Huylenbroeck
Publikováno v:
2016 IEEE 18th Electronics Packaging Technology Conference (EPTC).
In this paper an integrated wet process (photoresist strip and polymer removal) for through silicon vias fabricated by a Bosch process on a 300 mm single wafer tool will be discussed. A comparison between a dry and a wet post etch residue process, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11b51769b16f79e23b5c810eeb854687
https://doi.org/10.1109/eptc.2016.7861517
https://doi.org/10.1109/eptc.2016.7861517
Autor:
Eric Beyne, Priya Mukundhan, M. Liebens, Andy Miller, Manjusha Mehendale, Michael Kotelyanskii, X. Ru, Todd W. Murray, Robin Mair, S. Van Huylenbroeck, T. Kryman, L. Haensel
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Through Silicon Via (TSV) technology represents one key aspect of 3D integration. International Technology Roadmap for Semiconductors (ITRS) has identified a need for an in-line metrology for characterizing voids in TSV structures. We have previously
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90c93630e97603f35833d623ce9eb482
https://doi.org/10.1109/asmc.2016.7491103
https://doi.org/10.1109/asmc.2016.7491103
Autor:
Ngoc Duy Nguyen, S. Van Huylenbroeck, K. Van Wichelen, Rafael Venegas, Stefaan Decoutere, K. De Meyer, Shuzhen You, A. Sibaja-Hernandez
Publikováno v:
Thin Solid Films. 518:S68-S71
This paper investigates the optimization of the external polysilicon base sheet resistance of quasi self-aligned (QSA) SiGe:C HBTs from a 0.13 μm BiCMOS process. Taking advantage of optimized implant conditions to improve the doping of the external
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cbdbc3e56516b4cc499e04c2ff98df2
https://doi.org/10.1016/j.tsf.2009.10.058
https://doi.org/10.1016/j.tsf.2009.10.058
Publikováno v:
IEEE Transactions on Nuclear Science. 56:2198-2204
The effect of an airgap deep trench isolation on the gamma radiation behavior of a 0.13 mum SiGe NPN HBT technology is studied with the help of in-situ measurements. The incorporation of this deep trench isolation in the technology leads to a lower d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9986aecd4ce451acbaf94c16282d1ef
https://doi.org/10.1109/tns.2009.2018277
https://doi.org/10.1109/tns.2009.2018277