Zobrazeno 1 - 10
of 22
pro vyhledávání: '"S. Vallisree"'
Autor:
Shashi Kant Tiwari, Lakshmi Annamalai Kumaraswamidhas, Rohit Patel, Naveen Garg, S. Vallisree
Publikováno v:
Measurement: Sensors, Vol 33, Iss , Pp 101203- (2024)
The present study presents an investigation into the utilization of artificial neural networks (ANN) and multiple linear regression model (MLR) for the prediction of traffic noise levels in various locations of Dhanbad city at varying intervals. Traf
Externí odkaz:
https://doaj.org/article/5d25d5a9a89740a7ad126f0786f39cb7
Publikováno v:
Journal of Electronic Materials. 51:2228-2235
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811923074
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::275d064740847f5ccbcd80fb040fbab0
https://doi.org/10.1007/978-981-19-2308-1_2
https://doi.org/10.1007/978-981-19-2308-1_2
Autor:
Trupti Ranjan Lenka, S. Vallisree
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811637667
Lecture Notes in Electrical Engineering
Lecture Notes in Electrical Engineering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b26369445e60640d2246423eb37635fe
https://doi.org/10.1007/978-981-16-3767-4_21
https://doi.org/10.1007/978-981-16-3767-4_21
Publikováno v:
Applied Physics A. 126
We report on dual absorber n-silicon/p-Cu2ZnSnS4 (Si/CZTS) solar cell model with CZTS as top absorber, silicon as bottom absorber and ITO acting as transparent conducting oxide layer on top of CZTS material in order to exploit the advantages of well-
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:7262-7272
We report a model of CZTS/ZnS/ZnO nanorod device designed using optical coefficients of each thin film layers obtained from the experimental results. The $$J-V$$ characteristic was compared with available experimental result in order to validate our
Publikováno v:
AIMS Geosciences, Vol 2, Iss 4, Pp 273-285 (2016)
Geo-informatics technology has dynamic role in mapping, monitoring and management of forest resources. The transformation of forest cover and its analysis on the earth’s surface are essential for understanding the associations and interactions betw
Publikováno v:
2017 International Conference on Energy, Communication, Data Analytics and Soft Computing (ICECDS).
In this paper a model is developed for bottom gate Thin Film Transistor with ZnO as active channel layer using 2D numerical simulator. Gate dielectric material plays an important role in the design of TFTs as the transistor performance is primarily a
Publikováno v:
Materials Research Express. 6:025910
Currently, crystalline and polycrystalline silicon wafer based solar cells dominate the photovoltaic market, which employs expensive manufacturing processes. Zinc oxide is one among the inexpensive alternatives for acting as emitter/anti-reflection c
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:7273-7273
The original version of this article was published with the following errors. This has been corrected with this erratum.