Zobrazeno 1 - 10
of 23
pro vyhledávání: '"S. Vallisree"'
Autor:
Shashi Kant Tiwari, Lakshmi Annamalai Kumaraswamidhas, Rohit Patel, Naveen Garg, S. Vallisree
Publikováno v:
Measurement: Sensors, Vol 33, Iss , Pp 101203- (2024)
The present study presents an investigation into the utilization of artificial neural networks (ANN) and multiple linear regression model (MLR) for the prediction of traffic noise levels in various locations of Dhanbad city at varying intervals. Traf
Externí odkaz:
https://doaj.org/article/5d25d5a9a89740a7ad126f0786f39cb7
Publikováno v:
Journal of Electronic Materials. 51:2228-2235
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f6d78600074300025485968c54ee724
https://doi.org/10.1007/s11664-022-09449-2
https://doi.org/10.1007/s11664-022-09449-2
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811923074
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::275d064740847f5ccbcd80fb040fbab0
https://doi.org/10.1007/978-981-19-2308-1_2
https://doi.org/10.1007/978-981-19-2308-1_2
Akademický článek
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Autor:
Trupti Ranjan Lenka, S. Vallisree
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811637667
Lecture Notes in Electrical Engineering
Lecture Notes in Electrical Engineering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b26369445e60640d2246423eb37635fe
https://doi.org/10.1007/978-981-16-3767-4_21
https://doi.org/10.1007/978-981-16-3767-4_21
Publikováno v:
Applied Physics A. 126
We report on dual absorber n-silicon/p-Cu2ZnSnS4 (Si/CZTS) solar cell model with CZTS as top absorber, silicon as bottom absorber and ITO acting as transparent conducting oxide layer on top of CZTS material in order to exploit the advantages of well-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ddf6c14cdadb8afdc83ef65020b52ac
https://doi.org/10.1007/s00339-020-3343-9
https://doi.org/10.1007/s00339-020-3343-9
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:7262-7272
We report a model of CZTS/ZnS/ZnO nanorod device designed using optical coefficients of each thin film layers obtained from the experimental results. The $$J-V$$ characteristic was compared with available experimental result in order to validate our
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9b6ada23c6118cbbdd263e1eac64703
https://doi.org/10.1007/s10854-018-8715-y
https://doi.org/10.1007/s10854-018-8715-y
Publikováno v:
AIMS Geosciences, Vol 2, Iss 4, Pp 273-285 (2016)
Geo-informatics technology has dynamic role in mapping, monitoring and management of forest resources. The transformation of forest cover and its analysis on the earth’s surface are essential for understanding the associations and interactions betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2a99606d0afdcaeff7148573e4f4fec
http://www.aimspress.com/geosciences/article/1049/fulltext.html
http://www.aimspress.com/geosciences/article/1049/fulltext.html
Publikováno v:
2017 International Conference on Energy, Communication, Data Analytics and Soft Computing (ICECDS).
In this paper a model is developed for bottom gate Thin Film Transistor with ZnO as active channel layer using 2D numerical simulator. Gate dielectric material plays an important role in the design of TFTs as the transistor performance is primarily a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efa880a9d60053c75c4f39205f268340
https://doi.org/10.1109/icecds.2017.8390197
https://doi.org/10.1109/icecds.2017.8390197
Publikováno v:
Materials Research Express. 6:025910
Currently, crystalline and polycrystalline silicon wafer based solar cells dominate the photovoltaic market, which employs expensive manufacturing processes. Zinc oxide is one among the inexpensive alternatives for acting as emitter/anti-reflection c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a765387d3607c109b5e829f1f99cb97
https://doi.org/10.1088/2053-1591/aaf023
https://doi.org/10.1088/2053-1591/aaf023