Zobrazeno 1 - 10 of 88 pro vyhledávání: '"S. Valdueza‐Felip"'
1
Akademický článek
Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering
Autor: S. Valdueza-Felip, A. Núñez-Cascajero, R. Blasco, D. Montero, L. Grenet, M. de la Mata, S. Fernández, L. Rodríguez-De Marcos, S. I. Molina, J. Olea, F. B. Naranjo
Publikováno v: AIP Advances, Vol 8, Iss 11, Pp 115315-115315-7 (2018)
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of a 2-3 nm
Externí odkaz: https://doaj.org/article/4ab9abdfaf944c4b820965cc8a734e34
Zobrazit plný text záznamu
2
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
3
Design of AlInN on silicon heterojunctions grown by sputtering for solar devices
Autor: S. Valdueza-Felip, R. Blasco, Fernando B. Naranjo
Publikováno v: Current Applied Physics. 20:1244-1252
AlInN alloys offer great potential for photovoltaics thanks to their wide direct bandgap covering the solar spectrum from the infrared (0.7 eV – InN) to the ultraviolet (6.2 eV – AlN), and their superior resistance to high temperatures and high-e
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fb7623d0b3b2c865f2947890eb2b1a74
https://doi.org/10.1016/j.cap.2020.07.018
Zobrazit plný text záznamu
4
AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering
Autor: Alba Díaz-Lobo, R. Blasco, Fernando B. Naranjo, S. Valdueza-Felip, A.F. Braña, Javier Olea
Publikováno v: E-Prints Complutense. Archivo Institucional de la UCM
instname
Materials, Vol 13, Iss 2336, p 2336 (2020)
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
Biblos-e Archivo: Repositorio Institucional de la UAM
Universidad Autónoma de Madrid
Materials
Volume 13
Issue 10
Biblos-e Archivo. Repositorio Institucional de la UAM
Consejo Superior de Investigaciones Científicas (CSIC)
We investigate the photovoltaic performance of solar cells based on n-AlxIn1&minus
xN (x = 0&ndash
0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlxIn1&minus
xN layers own an optical bandgap absorpti
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b5dfb2cf0544fa10fd9e61cec906350
https://doi.org/10.3390/ma13102336
Zobrazit plný text záznamu
5
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
6
High quality Al$_{0.37}$In$_{0.63}$N layers grown at low temperature (<300$^\circ$C) by radio-frequency sputtering
Autor: S. Valdueza-Felip, Javier Olea, D. Montero, Fernando B. Naranjo, A. Núñez-Cascajero, R. Blasco
Publikováno v: E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
E-Prints Complutense. Archivo Institucional de la UCM
instname
High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to 300 degrees C). Their structural, chemical and optical properties are
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27a85c5ce822a011b10d4a0ca627bfef
http://arxiv.org/abs/1909.12068
Zobrazit plný text záznamu
7
III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm
Autor: Pedro Corredera, Pablo Aitor Postigo, Miguel Gonzalez-Herraez, Fernando B. Naranjo, S. Valdueza-Felip, L. Monteagudo-Lerma, Eva Monroy, Marco Jiménez-Rodríguez
Publikováno v: physica status solidi (a). 213:1269-1275
We present an overview of the recently developed III-nitride-based optical waveguides for application in ultrafast signal processing at telecom wavelengths. We focus on different active and passive optical devices for further implementation within al
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b8d4031d4ad13809b9765af8a0110c82
https://doi.org/10.1002/pssa.201532810
Zobrazit plný text záznamu
8
Low‐to‐Mid Al Content ( x = 0–0.56) Al x In 1− x N Layers Deposited on Si(100) by Radio‐Frequency Sputtering
Autor: Michael Sun, S. Valdueza-Felip, Javier Olea, D. Montero, R. Blasco, Fernando B. Naranjo
Publikováno v: physica status solidi (b). 257:1900575
Radio frequency sputtering is a low-cost technique for the deposition of large-area single-phase AlInN on silicon layers with application in photovoltaic devices. Here we study the effect of the Al mole fraction x from 0 to 0.56 on the structural, mo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e2c18be811b066413aa77127bfbf83ae
https://doi.org/10.1002/pssb.201900575
Zobrazit plný text záznamu
10
Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering
Autor: Miguel Gonzalez-Herraez, Sergio I. Molina, Eva Monroy, S. Valdueza-Felip, R. Blasco, Fernando B. Naranjo, M. de la Mata, A. Núñez-Cascajero
Publikováno v: e_Buah Biblioteca Digital Universidad de Alcalá
instname
Journal of Alloys and Compounds
Journal of Alloys and Compounds, Elsevier, 2018, 769, pp.824-830. ⟨10.1016/j.jallcom.2018.08.059⟩
Journal of Alloys and Compounds, 2018, 769, pp.824-830. ⟨10.1016/j.jallcom.2018.08.059⟩
The effect of an AlN buffer layer thickness on the structural, morphological and optical properties of n- Al0.37In0.63N deposited on p-Si (111) by radio-frequency sputtering was studied. The AlN/ Al0.37In0.63N samples were structurally characterized
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c9d27bc3f575117d1c80e23144a1d13
http://hdl.handle.net/10017/36406
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje