Zobrazeno 1 - 10
of 13
pro vyhledávání: '"S. V. Voitikov"'
Autor:
P. A. Popov, S. A. Skrobov, W. Paszkowicz, V. M. Puzikov, A.N. Shekhovtsov, I. A. Khodasevich, M. B. Kosmyna, A. Behrooz, N. N. Shereshovets, V. A. Orlovich, S. V. Voitikov, A. V. Matovnikov, B. P. Nazarenko
Publikováno v:
International Journal of Thermophysics. 38
The $$\hbox {Ca}_{9}\hbox {RE}(\hbox {VO}_{4})_{7}$$ (RE $$=$$ La, Nd, Gd) and $$\hbox {Ca}_{10}\hbox {M}(\hbox {VO}_{4})_{7}$$ (M $$=$$ Li, Na, K) single crystals have been grown by the Czochralski method. The binary vanadates are isostructural to
Publikováno v:
Quantum Electronics. 32:260-263
By solving radiation-transfer equations, we studied the effect of amplified luminescence on the lasing threshold of long-wavelength injection InGaAsP/InP lasers with bulk and quantum-well active layers emitting in the range from 1.3 to 1.55 μm. The
Autor:
K.A. Shore, R. Kragler, L. I. Burov, Gennadii I. Ryabtsev, P. S. Grigelevich, S. V. Voitikov, V. P. Gribkovskii, M. Kramar
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 14:331-343
A theoretical framework is established for the investigation of the effect of amplified luminescence, non-radiative recombination, photon losses, and gain non-linearity on the threshold current characteristics and small-signal modulation responses of
Autor:
S. V. Voitikov
Publikováno v:
Journal of Applied Spectroscopy. 56:499-504
i. ~. D. Aluker, V. V. Gavrilov, R. G. Deich, and S. A. Chernov, Pisma Zh. ~ksp. Teor. Fiz., 17, No. 2, 116 (1988). 2. J. L. Jansons, V. J. Krumins, Z. A. Rachko, and J. A. Valbis, Phys. Status Solidi (B), 144, No. 5, 835 (1987). 3. A. V. Golovin, P.
Autor:
S. V. Voitikov
Publikováno v:
physica status solidi (b). 163:151-160
Impact ionization of semiconductors under ultrafast electric-field excitation at the streamer discharge front is theoretically investigated. It is shown that impact ionization is initiated by virtual electrons and is of unthreshold character unlike t
Publikováno v:
Lasers for Measurements and Information Transfer 2004.
Laser operation of passively Q-switched Nd3+:LSB microchip laser with Cr4+:YAG saturable absorber has been investigated theoretically and experimentally. Energy and temporal characteristics of sub-nanosecond output laser pulses have been studied usin
Publikováno v:
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401).
The high-speed response of long-wavelength laser diodes to harmonic modulation of the injection current has been investigated and modeled. It is shown that intrinsic nonlinearities of gain, recombination processes, and amplified luminescence signific
Publikováno v:
IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305).
The values of power densities for the amplified luminescence (superluminescence) trapped in a laser diode (LD) cavity have been calculated as a function of the current and temperature for different types of LDs. AlGaAs, InGaAs/AlGaAs and InGaAsP/InP
Publikováno v:
13th International Conference on Microwaves, Radar and Wireless Communications. MIKON - 2000. Conference Proceedings (IEEE Cat. No.00EX428).
Investigation and modeling of the effect of recombination and gain nonlinearities caused both by saturation and nonlinear dependence on carrier concentration on modulation response of high-speed long-wavelength bulk semiconductor lasers under moderat
CARRIER TRANSPORT EFFECT ON A LARGE SIGNAL RESPONSE OF QUANTUM-WELL LASERS WITH A SATURABLE ABSORBER
Autor:
V. P. Gribkovskii, S. V. Voitikov
Publikováno v:
Physics, Chemistry and Application of Nanostructures.