Zobrazeno 1 - 9
of 9
pro vyhledávání: '"S. V. Subach"'
Autor:
I. V. Ivonin, S. V. Subach
Publikováno v:
Russian Physics Journal. 49:580-588
The composition of the adsorption layer formed on the GaAs (001) surface at the initial stages of heteroepitaxial growth of InP in a chloride vapor-transport system is calculated within a thermodynamic approach. The obtained results allow us to under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::098364653f86c465d14c9136aca763a0
https://doi.org/10.1007/s11182-006-0146-1
https://doi.org/10.1007/s11182-006-0146-1
Autor:
S. V. Subach, V. V. Preobrazhenskii, B. R. Semyagin, L. L. Anisimova, Anton K. Gutakovskii, I. V. Ivonin, Mikhail A. Putyato
Publikováno v:
Journal of Structural Chemistry. 45:S96-S102
Results are obtained from the experimental studies (atomic force and transmission microscopy) of the influence of III/V flux ratio on the topography and internal structure of LT MBE films of InGaAs and GaAs. The layers are shown to contain both the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e04b9bfd3aed0b1314aaa85688ef11a
https://doi.org/10.1007/s10947-006-0101-6
https://doi.org/10.1007/s10947-006-0101-6
Autor:
M. D. Vilisova, L. G. Lavrent'eva, I. A. Bobrovnikova, S. V. Subach, V. V. Preobrazhenskii, I. V. Ivonin, S. E. Toropov, B. R. Semyagin, Mikhail A. Putyato
Publikováno v:
Semiconductors. 37:1047-1052
The effect of dopant concentration and growth-surface crystallographic orientation on the incorporation of Si into Ga and As sublattices was investigated during GaAs molecular-beam epitaxy. The epitaxial layers (epilayers) were grown on GaAs substrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbbe9f590aa0cb0d1979e4e2d76919b3
https://doi.org/10.1134/1.1610116
https://doi.org/10.1134/1.1610116
Autor:
M. D. Vilisova, S. E. Toropov, S. V. Subach, L. G. Lavrent'eva, B. R. Semyagin, V. V. Preobrazhenskii, I. A. Bobrovnikova, I. V. Ivonin, M. A. Putyato
Publikováno v:
Russian Physics Journal. 45:414-418
The influence of crystallographic orientation of the growth surface near (100) and (111)A GaAs singular faces on the silicon capture into A- and B-sublattices of gallium arsenide in molecular beam epitaxy is investigated by the electrophysical and ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::468ad1b29004aa708651ca69e4d50443
https://doi.org/10.1023/a:1020543427057
https://doi.org/10.1023/a:1020543427057
Autor:
L. G. Lavrent'yeva, M. D. Vilisova, B. Bobrovnikova, S. V. Subach, V. V. Preobrazhenskii, B. R. Semyagin, I. V. Ivonin, Mikhail A. Putyato
Publikováno v:
Russian Physics Journal. 43:816-820
InGaAs layers grown by low-temperature molecular-beam epitaxy on InP substrates at variable flow ratios between elements of groups III and V are investigated. Layers with a defect structure and low electrophysical parameters are shown to grow with an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2197267459ac32abb6fed7b37590f36c
https://doi.org/10.1023/a:1009476531833
https://doi.org/10.1023/a:1009476531833
Autor:
S. V. Subach, M. D. Vilisova, I. T. Shulepov, T. V. Korableva, V. S. Lukash, L. G. Lavrent'eva, I. V. Ivonin, M. P. Yakubenya
Publikováno v:
Russian Physics Journal. 42:17-21
It is known that during gas-phase epitaxy of InP and GaAs the region of the film close to the heteroboundary is formed with altered phase, structural, and electrophysical properties. The main cause for this is formation of a transition layer due to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce1693484f18700083cee0ae135e71a0
https://doi.org/10.1007/bf02508239
https://doi.org/10.1007/bf02508239
Autor:
S. V. Subach, E. V. Chernikov, V. S. Lukash, I. V. Ivonin, A. N. Tarzimyanov, L. G. Lavrent'eva
Publikováno v:
Russian Physics Journal. 39:571-575
The initial stages in the growth of indium phosphide films on gallium arsenide substrates in a chloride gastransport system are investigated by transmission electron microscopy and electron-diffraction and secondaryion mass spectrometry techniques. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27cceb031e7c5fe524504f247edd4dc6
https://doi.org/10.1007/bf02437023
https://doi.org/10.1007/bf02437023
Autor:
B. R. Semyagin, Yu. G. Musikhin, N. A. Bert, L. G. Lavrentieva, Mikhail A. Putyato, S. V. Subach, V. V. Preobrazhenskii, M. D. Vilisova, V. V. Chaldyshev, I. V. Ivonin, M. P. Yakubenya
Publikováno v:
Scopus-Elsevier
This paper describes studies of InGaAs layers grown by molecular-beam epitaxy on InP (100) substrates at temperatures of 150–480 °C using various arsenic fluxes. It was found that lowering the epitaxy temperature leads to changes in the growth sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1873c5027b6abd71ef5fc1d7c3f3607d
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033177755&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033177755&partnerID=MN8TOARS
Autor:
M. P. Yakubenya, S. V. Subach, V. V. Preobrazhenskii, D. I. Lubyshev, V. V. Chaldyshev, I. V. Ivonin, A. I. Veinger, M. D. Vilisova, I. A. Bobrovnikova, B. R. Semyagin, L. G. Lavrent'eva, Mikhail A. Putyato
Publikováno v:
Scopus-Elsevier
We study epitaxial GaAs and InGaAs films produced by molecular-beam epitaxy in the temperature range 150–480°C and with various arsenic partial pressures. We determine the structural and electrophysical characteristics of the film (the excess arse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed81a29e77bf6ba54dafeb823a71506d
http://www.scopus.com/inward/record.url?eid=2-s2.0-54649084848&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-54649084848&partnerID=MN8TOARS