Zobrazeno 1 - 10
of 28
pro vyhledávání: '"S. V. Slobodchikov"'
Autor:
S. V. Slobodchikova, K. V. Schmagel
Publikováno v:
Медицинская иммунология, Vol 14, Iss 1-2, Pp 95-102 (2014)
Abstract. Antistaphylococcal immunoglobulins (ASIg) are widely used for treatment of staphylococcal infections. However, Russian literature sources still lack any evidence-based data justifying clinical efficiency of this preparation. Taking into acc
Externí odkaz:
https://doaj.org/article/41d824edc69c4c1a81a45abca52f3e93
Publikováno v:
Semiconductors. 38:1198-1201
I-V characteristics, spectral photosensitivity, and the dependence of the photocurrent on bias, as well as the effect of a 1%-H2S/N2 gas mixture, were studied for an Al-p-Si-SnO2:Cu-Ag heterostructure. The charge transport for carriers in the dark an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::511521f314dae3ea534497ed03c5babe
https://doi.org/10.1134/1.1808828
https://doi.org/10.1134/1.1808828
Publikováno v:
Semiconductors. 37:936-939
Electrical characteristics of Cr-n-InP and Mo-n-InP diode structures were investigated, and the charge-transport mechanism was estimated. It was established that this is either a thermionic or generation-recombination current that dominates in the Cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::580e957b70af03eab8de50977645d715
https://doi.org/10.1134/1.1601662
https://doi.org/10.1134/1.1601662
Publikováno v:
Semiconductors. 37:183-186
The mechanism of charge transport in Fe-p-InP diode structures and its dependences on illumination and magnetic field were investigated. It is shown that a double injection in a drift approximation into a high-resistivity π-layer is the main mechani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f37bd1adffbbff93af1a5c74dc55569
https://doi.org/10.1134/1.1548662
https://doi.org/10.1134/1.1548662
Publikováno v:
Semiconductors. 36:476-479
Electrical and photoelectric characteristics of Pd-p-InP diode structures were studied after their storage in air for many years. An increase in the Schottky barrier height by 0.2–0.3 eV and a rise in photosensitivity were revealed. The current tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f872da2fb98baa9ac1430a44448d7b63
https://doi.org/10.1134/1.1469199
https://doi.org/10.1134/1.1469199
Publikováno v:
Semiconductors. 35:464-467
The mechanism of charge transport in an anisotype p-Si-n+-ZnO-n-ZnO-Pd heterostructure with Schottky contact was studied. Photoelectric characteristics of this heterostructure were analyzed. The observed dependence I ∝ V3 is attributed to the doubl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f5ff5067bdbee2afe18665e877ced41
https://doi.org/10.1134/1.1365196
https://doi.org/10.1134/1.1365196
Publikováno v:
Semiconductors. 34:1224-1228
Current-voltage characteristics at T=100 and 300 K, the temperature dependence of the forward current and photocurrent, the influence of a magnetic field on the photocurrent, and the influence of hydrogen on the photovoltage and dark current were inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50c87d52e7326a0785e2a6f7ff6e549c
https://doi.org/10.1134/1.1317588
https://doi.org/10.1134/1.1317588
Autor:
Kh. M. Salikhov, S. V. Slobodchikov
Publikováno v:
Semiconductors. 34:284-290
The p-InP-n-In2O3-P2O5-Pd diode structure was fabricated using a two-stage technological procedure, which involved cold etching, polishing, and electrochemical deposition of palladium. The charge transport is investigated in the temperature range of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f263c625827b6f4248fed8121170fcec
https://doi.org/10.1134/1.1187972
https://doi.org/10.1134/1.1187972
Publikováno v:
Semiconductors. 31:11-14
The electrical characteristics and the photovoltage on Pd-p 0-Si-p-Si diode structures with a disordered (porous) p 0 layer of Si have been measured. The current-transfer mechanism is assumed to be double injection of electrons and holes into the p 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75e4b18bf289af0d5bf6bd12bea9d25e
https://doi.org/10.1134/1.1187325
https://doi.org/10.1134/1.1187325
Publikováno v:
Semiconductors. 38:1381-1383
Electrical and photoelectric properties of Al-n-Si-SnO2:Cu-Ag heterostructures are studied. It is established that the charge transport in this structure is caused by double injection of charge carriers in the diffusion approximation. A 35% increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5866fc712bcf76aad3d94a5d844245eb
https://doi.org/10.1134/1.1836056
https://doi.org/10.1134/1.1836056