Zobrazeno 1 - 10
of 30
pro vyhledávání: '"S. V. Sitnikov"'
Publikováno v:
Туберкулез и болезни лёгких, Vol 0, Iss 6, Pp 61-65 (2014)
A simple prospective investigation studied the efficacy of reamberine used to prevent antituberculosis drug-induced hepatitis in 144 patients with new-onset infiltrative pulmonary tuberculosis who were divided into 2 groups: 1) those who received a 1
Externí odkaz:
https://doaj.org/article/eb8e85dc4b7e427697de4d296c5237ab
Autor:
O. I. Semenova, L. I. Fedina, A. K. Gutakovskii, S. V. Sitnikov, N. N. Kurus, A. A. Dudin, A. A. Pavlov, D. V. Sheglov
Publikováno v:
Journal of Structural Chemistry. 63:1145-1152
Autor:
D. V. Sheglov, M. A. Dem’yanenko, O. I. Semenova, S. V. Rodyakin, D. A. Nasimov, S. V. Sitnikov, D. I. Rogilo, L. I. Fedina, A. L. Aseev, A. V. Latyshev
Publikováno v:
RADIO COMMUNICATION TECHNOLOGY. :75-88
This work is devoted to the development of a technique for obtaining an array of multi-walled vertically aligned carbon nanotubes (VACNT) with a thickness of up to 120 μm on Si/Al2O3/Fe substrates and to the study of their absorbing properties in th
Autor:
D. V. Sheglov, L. I. Fedina, Anton Latyshev, S. A. Ponomarev, S. V. Sitnikov, E. E. Rodyakina, A. S. Petrov, D. I. Rogilo
Publikováno v:
Crystallography Reports. 66:570-580
The results of recent studies of the structural morphological transformations of Si(111) and Si(100) surfaces using in situ ultrahigh-vacuum reflection electron microscopy (UHV REM) are presented. It is established that high-temperature sublimation f
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 56:533-544
The article presents how the understanding of the fundamental processes of self-organization and morphological transformations of the atomically clean Si(111) surface as a result of the study using in situ ultrahigh vacuum reflection electron microsc
Publikováno v:
Journal of Crystal Growth. 520:85-88
Using in situ ultrahigh vacuum reflection electron microscopy and ex situ atomic force microscopy, we have investigated the influence Si deposition on the step bunching on the Si(0 0 1) surface under direct current (DC) sample heating in 950–1150
Publikováno v:
Semiconductors. 53:795-799
By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is de
Publikováno v:
Semiconductors. 53:434-438
The transformation of micropits on large terraces of the Si(111) surface containing no vicinal atomic steps has been investigated by in situ ultrahigh-vacuum reflection electron microscopy upon thermal annealing of the substrate in the range of 1200
Publikováno v:
Siberian Journal of Physics. 14:77-85
Publikováno v:
Russian Microelectronics. 47:365-370
The effect of homoepitaxial Si(001) growth on the surface morphology during the annealing of a substrate by passing a direct current is examined by in situ high-vacuum reflection electron microscopy at a temperature of 1100°С and ex situ atomic for