Zobrazeno 1 - 10 of 10 pro vyhledávání: '"S. V. Shapenkov"'
1
Gas sensors based on pseudohexagonal phase of gallium oxide
Autor: M.P. Scheglov, Pavel Butenko, Igor Sinyugin, V. I. Nikolaev, A. V. Almaev, A. I. Pechnikov, Sergey Stepanov, S. V. Shapenkov, Nikita N. Yakovlev
Publikováno v: Physica status solidi. 2022. Vol. 259, № 2. P. 2100306 (1-11)
The electrical conductivity of pseudohexagonal ε(κ)-Ga2O3 films under different ambient gases (H2, NO2, O2, and CO) is studied in a range of temperatures from 400 to 550 °C. The exposure of ε(κ)-Ga2O3 to reducing gases such as H2 and CO results
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e32e05944bc65af26d222c83a65358e0
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000898835
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3
Correlation of structure and intrinsic luminescence of freshly introduced dislocations in GaN revealed by SEM and TEM
Autor: S. V. Shapenkov, Michael Seibt, Oleg S. Medvedev, Oleg Vyvenko, Evgeniy Ubyivovk
Publikováno v: AIP Conference Proceedings.
Dislocation structure and cathodoluminescence (CL) of locally plastically deformed n-GaN is investigated in transmission electron microscope (TEM) and in scanning electron microscope (SEM). Multiple dense indentations of the samples with subsequent T
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::12a8746fee047f494494d4454d353674
https://doi.org/10.1063/1.5087682
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4
Characteristic emission from quantum dot-like intersection nodes of dislocations in GaN
Autor: Gordon Schmidt, Sebastian Metzner, Peter Veit, S V Shapenkov, O F Vyvenko, Juergen Christen, F. Bertram
Publikováno v: Journal of Physics: Conference Series. 1851:012013
Freshly introduced a-screw dislocations in gallium nitride are an effective source of ultraviolet radiation, characterized by intense emission of narrow luminescence doublet lines in the spectral range of 3.1-3.2 eV. Furthermore, an additional narrow
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::07afe972166ba8cbf0ae3f4825b3e7b6
https://doi.org/10.1088/1742-6596/1851/1/012013
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6
HVPE Growth and Characterization of ε-Ga2O3 Films on Various Substrates
Autor: M. P. Scheglov, Oleg Vyvenko, S. V. Shapenkov, A.V. Chikiryaka, A. I. Pechnikov, V. I. Nikolaev, S.I. Stepanov
Publikováno v: ECS Journal of Solid State Science and Technology. 9:045014
In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy (HVPE) on various substrates under the same growth conditions. Gallium oxide films were deposited at 500 °C–600 °C on basal plane (0001) planar and patterned
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a88374c9dc50ffb349d1b16bf0a6829
https://doi.org/10.1149/2162-8777/ab8b4c
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7
HVPE growth of α- and ε-Ga2O3 on patterned sapphire substrates
Autor: M. P. Scheglov, V. I. Nikolaev, Sergey Stepanov, S. V. Shapenkov, Oleg Vyvenko, O S Medvedev, A.V. Chikiryaka, A. I. Pechnikov, Evgeny Ubyivovk, V. V. Nikolaev
Publikováno v: Journal of Physics: Conference Series. 1400:055049
Here we report on the growth and characterisation of α- and ε-Ga2O3 epitaxial films produced by halide vapour phase epitaxy (HVPE). The films were deposited on two types of substrate: (0001) plain sapphire substrates and (0001) patterned sapphire s
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::42e5228f6618b19fe04a7acbf72ed5c4
https://doi.org/10.1088/1742-6596/1400/5/055049
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8
Extended core structure and luminescence of a-screw dislocations in GaN
Autor: Michael Seibt, S. V. Shapenkov, Oleg Vyvenko, Evgeniy Ubyivovk, Oleg S. Medvedev
Publikováno v: Journal of Physics: Conference Series. 1190:012006
Straight segments of a-screw dislocations introduced by scratching of basal (0001) of intentionally undoped low-ohmic GaN radiate a doublet of narrow luminescent lines in the spectral region at about 3.1-3.2 eV while the dislocation intersection poin
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::68d0b788292e4fdcf011d1c92596c746
https://doi.org/10.1088/1742-6596/1190/1/012006
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9
Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN
Autor: Michael Seibt, Evgeniy Ubyivovk, Oleg N. Medvedev, S. V. Shapenkov, P. Saring, O. F. Vyvenko, Anton Bondarenko
Publikováno v: Journal of Applied Physics. 123:161427
Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means of cathodoluminescence and transmission electron microscopy (TEM). A
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae1b3575c00064aa411637bcf1f06f34
https://doi.org/10.1063/1.5011368
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10
Akademický článek
Extended core structure and luminescence of a-screw dislocations in GaN.
Autor: O S Medvedev, O F Vyvenko, E V Ubyivovk, S V Shapenkov, M Seibt
Publikováno v: Journal of Physics: Conference Series; 2019, Vol. 1190 Issue 1, p1-1, 1p
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