Zobrazeno 1 - 10
of 85
pro vyhledávání: '"S. V. S. Nageswara Rao"'
Autor:
Laden Sherpa, Arun Nimmala, S. V. S. Nageswara Rao, S. A. Khan, Anand P. Pathak, Ajay Tripathi, Archana Tiwari
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-19 (2024)
Abstract We present green synthesis of silver nanoparticles in water using unirradiated and Ag $$^{15+}$$ 15 + ion irradiated phytoextracts of Bergenia Ciliata leaf, Eupatorium adenophorum leaf, Rhododendron arboreum leaf and flower. The use of diffe
Externí odkaz:
https://doaj.org/article/b6226315b0e34d7d881fbf28c06b3ae1
Autor:
Syed Hamad, Sree Satya Bharati Moram, Balaji Yendeti, G. Krishna Podagatlapalli, S. V. S. Nageswara Rao, Anand Prakash Pathak, Mahamad Ahamad Mohiddon, Venugopal Rao Soma
Publikováno v:
ACS Omega, Vol 3, Iss 12, Pp 18420-18432 (2018)
Externí odkaz:
https://doaj.org/article/7cec08ab519c4b6ea2030c26b7bf7976
Autor:
Andrey Baydin, Halina Krzyzanowska, Munthala Dhanunjaya, S. V. S. Nageswara Rao, Jimmy L. Davidson, Leonard C. Feldman, Norman H. Tolk
Publikováno v:
APL Photonics, Vol 1, Iss 3, Pp 036102-036102-8 (2016)
Silicon carbide (SiC) is a promising material for new generation electronics including high power/high temperature devices and advanced optical applications such as room temperature spintronics and quantum computing. Both types of applications requir
Externí odkaz:
https://doaj.org/article/20f68b28ae5e4562a780b92f9c4868f5
Autor:
Syed Hamad, G. Krishna Podagatlapalli, R. Mounika, S. V. S. Nageswara Rao, A. P. Pathak, S. Venugopal Rao
Publikováno v:
AIP Advances, Vol 5, Iss 12, Pp 127127-127127-16 (2015)
We report results from our studies on the fabrication and characterization of silicon (Si) nanoparticles (NPs) and nanostructures (NSs) achieved through the ablation of Si target in four different liquids using ∼2 picosecond (ps) pulses. The conseq
Externí odkaz:
https://doaj.org/article/fcfd52539f0644cd9771a80e24528fcd
Publikováno v:
Journal of Electronic Materials. 52:1541-1551
Publikováno v:
ACS Applied Nano Materials. 5:4550-4582
Autor:
K. Vinod Kumar, J. Pundareekam Goud, Kanaka Ravi Kumar, K. C. James Raju, S. V. S. Nageswara Rao
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:6657-6669
Autor:
Mangababu Akkanaboina, Dipanjan Banerjee, Kanaka Ravi Kumar, R. Sai Prasad Goud, Venugopal Rao Soma, S. V. S. Nageswara Rao
Publikováno v:
Surfaces and Interfaces. 36:102563
Autor:
A. Mangababu, K. Vinod Kumar, N. Arun, L. D. Varma Sangani, S. V. S. Nageswara Rao, M. Ghanashyam Krishna, A. P. Pathak
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:2973-2986
In this work, the effects of 120 MeV Ag ion irradiation on the switching properties of Au/HfO2/Au-based Resistive Random Access Memory (RRAM) devices are reported. The ion fluence is varied between 5 × 1010 and 5 × 1012 ions/cm2 while two device si
Autor:
Ch. Sianglam, A. Mangababu, B. Chandu, M. Motapothula, S. V. S. Nageswara Rao, S. Venugopal Rao, D.K. Avasthi
Publikováno v:
Journal of Electronic Materials. 50:1742-1751
The fabrication of an intriguing nano-fiber network interconnected to crystalline spherical shaped nanoparticles of HfO2 has been achieved by femtosecond (fs) pulsed laser ablation in liquids. Understanding the fundamental reasons behind the formatio