Zobrazeno 1 - 10
of 11
pro vyhledávání: '"S. V. Obolenskiy"'
Publikováno v:
Труды РФЯЦ-ВНИИЭФ. :248-259
The formation of a disordered defect region in bulk silicon is simulated using the molecular-dynamics method for various energies of a primary recoil atom. Variations in the volume and number of radiation-induced defects in a cluster during its forma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24b52387a361c85fab4c5fe608f70324
https://doi.org/10.53403/9785951505163_2021_26_1_248
https://doi.org/10.53403/9785951505163_2021_26_1_248
Autor:
S. V. Obolenskiy, A. V. Skupov
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 14:1160-1167
It is shown that the concentration оf disordered regions (radiation-induced defect clusters) formed during the irradiation of semiconductors by neutrons with a fluence of 1013–1015 cm–2 is just an order of magnitude less than the bulk concentrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5346f2d1006e8605f4933fa3b0f9fd75
https://doi.org/10.1134/s1027451020060166
https://doi.org/10.1134/s1027451020060166
Publikováno v:
Semiconductors. 54:1134-1140
The change in the carrier mobility in GaAs structures after irradiation is numerically simulated. For each investigated scattering potential, the model parameters are determined at which the calculation data are consistent with the results of the exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::852f35c3668b01684b7fd6cb7e08bd13
https://doi.org/10.1134/s1063782620090328
https://doi.org/10.1134/s1063782620090328
Publikováno v:
Semiconductors. 53:1222-1228
The simulation of reversible single events in test samples of static memory microcircuits with design norms of 0.5, 0.35, 0.25, and 0.1 μm under the effect of neutron fluxes with various energies is performed. It is shown theoretically and experimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a96820c2c23bd4869f25072285958846
https://doi.org/10.1134/s1063782619090173
https://doi.org/10.1134/s1063782619090173
Publikováno v:
Semiconductors. 52:1407-1411
The excitation-relaxation process in electron–hole plasma upon exposure to ionizing radiation for a time shorter than the relaxation time of the mobile carrier energy and momentum is considered. By the example of the calculation of transient ioniza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c7dd41019100436e102e0b38cb64cb9
https://doi.org/10.1134/s1063782618110209
https://doi.org/10.1134/s1063782618110209
Publikováno v:
Semiconductors. 53:1246-1248
The current–voltage characteristics of a resistive-memory structure based on non-stoichiometric tantalum oxides is numerically simulated. The results of pulsed studies of structures with different shapes of the conductive filament, such as a trunca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a80057f69741b74a63fbefe6f324cbf9
https://doi.org/10.1134/s1063782619090252
https://doi.org/10.1134/s1063782619090252
Publikováno v:
Semiconductors. 51:1466-1471
Calculation is performed for a flux of charge carriers in the structure of a GaAs bipolar transistor with a thin base in the case where a single cluster of radiation-induced defects is formed in the operating region of a transistor. It is shown that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff9b61ec5706d3ea6a79dd9d898d49ea
https://doi.org/10.1134/s106378261711029x
https://doi.org/10.1134/s106378261711029x
Publikováno v:
Semiconductors. 49:1537-1544
The processes of the formation and stabilization of a radiation-induced defect cluster upon the arrival of a fast neutron to the space-charge region of a semiconductor diode are analyzed. The current pulse formed by secondary electrons is calculated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a68f9af0a7b4fa98dbe6048135a92d1
https://doi.org/10.1134/s1063782615120155
https://doi.org/10.1134/s1063782615120155
Autor:
D. N. Lobanov, Z. F. Krasilnik, S. V. Obolenskiy, K. E. Kudryavtsev, D. V. Shengurov, A. V. Novikov, A. N. Kachemtsev
Publikováno v:
Semiconductors. 45:225-229
The effect of neutron radiation on the electroluminescence of the Si p-i-n diode containing a multilayered Ge/Si heterostructure with self-assembled nanoislands is studied. In comparison with bulk Si, the diodes containing Ge(Si) nanoislands exhibit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a86b2f5696ce1cada12bfb493f89010
https://doi.org/10.1134/s1063782611020126
https://doi.org/10.1134/s1063782611020126
Autor:
D. N. Lobanov, A. V. Novikov, Artem N. Yablonskiy, V. V. Platonov, S. V. Obolenskiy, Z. F. Krasilnik
Publikováno v:
Semiconductors. 44:329-334
This study is concerned with the effect of irradiation on the luminescence properties of low-dimensional Si/Ge heterostructures with different degrees of spatial localization of charge carriers. It is shown that the radiation stability of Si/Ge heter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::508ed6a2df14d4b40bc5f9a5fed896ff
https://doi.org/10.1134/s1063782610030103
https://doi.org/10.1134/s1063782610030103