Zobrazeno 1 - 10
of 10
pro vyhledávání: '"S. V. Mutilin"'
Publikováno v:
CrystEngComm. 23:443-452
In the present study, a strategy for the formation of hybrid Si/VO2 nanostructures that is fully compatible with well-established standard silicon technology has been developed. The strategy is based on the selective synthesis of VO2 NCs and their ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2204fc8bd75839e7cb42a22b032132f
https://doi.org/10.1039/d0ce01072c
https://doi.org/10.1039/d0ce01072c
Publikováno v:
Nanoscale. 12:3443-3454
A new approach for the formation of free-standing vertical resistive nanoswitches based on VO2 nanocrystals (NCs) with embedded conductive nanosharp Si tips is demonstrated in the present article. This approach consists in the chemical vapor depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2532df33b5992aac07032c305585fbb8
https://doi.org/10.1039/c9nr08712e
https://doi.org/10.1039/c9nr08712e
Publikováno v:
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM).
Vanadium dioxide (VO 2 ) is one of the most promising materials for new electronic devices and neuromorphic systems. Great interest in this material has arisen due to the unique reversible semiconductor-metal phase transition observed at 68°C. Recen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53339463f43c93ff40d10e723eebc4c4
https://doi.org/10.1109/edm52169.2021.9507652
https://doi.org/10.1109/edm52169.2021.9507652
Autor:
S. V. Mutilin, Victor Ya. Prinz, Vladimir R. Shayapov, Vadim N. Kichay, L. V. Yakovkina, Nikita I. Lysenko
Publikováno v:
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM).
Vanadium dioxide (VO 2 ) has a wide range of physical properties due to the existence of polymorphs. The most interesting ones for practical applications are the M- and B- phases of VO 2 . The M-phase exhibits a reversible structural and ultrafast (2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30f7fa90eea5fde47bc71e9512662d21
https://doi.org/10.1109/edm52169.2021.9507670
https://doi.org/10.1109/edm52169.2021.9507670
Publikováno v:
2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).
Vanadium dioxide VO 2 is a promising functional material for many practical applications, due to its large jump in conductivity observed during the phase transition. One of the main tasks for VO 2 material is to improve its phase transition character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::678a071567b7b13dfe86218f1fe791df
https://doi.org/10.1109/edm49804.2020.9153343
https://doi.org/10.1109/edm49804.2020.9153343
Autor:
V. Ya. Prinz, E. A. Maksimovsky, I. V. Korol’kov, L. V. Yakovkina, Tamara P. Smirnova, N. D. Volchok, S. V. Mutilin, V. R. Shayapov
Publikováno v:
Journal of Materials Science. 52:4061-4069
High-quality vanadium dioxide (VO2) films were synthesized on sapphire and silicon substrates by metal–organic chemical vapor deposition. Optimal growth conditions for obtaining abrupt and reversible semiconductor–metal phase transition of VO2 we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f16975900898a388fe4b740848bffc0
https://doi.org/10.1007/s10853-016-0669-y
https://doi.org/10.1007/s10853-016-0669-y
Publikováno v:
Applied Physics Letters. 113:043101
In recent years, the synthesis and study of individual single-crystal VO2 nanowires (NWs) have been attracting much interest due to the unique properties of the material related with the single-domain metal-insulator phase transition in such NWs. Alt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::896cc78a33bf2c3e2455d7e5974927ee
https://doi.org/10.1063/1.5031075
https://doi.org/10.1063/1.5031075
Autor:
T. Khasanov, S. V. Mutilin
Publikováno v:
Optics and Spectroscopy. 105:461-465
The effect of the through-thickness inhomogeneity of SiO2 films on their refractive index is studied. The SiO2 films, deposited by tetraethoxysilane pyrolysis on plane-parallel oriented crystalline quartz substrates and on silicon plates, were etched
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c581652062e4d6cd0b09fbae3e4cef67
https://doi.org/10.1134/s0030400x0809018x
https://doi.org/10.1134/s0030400x0809018x
Publikováno v:
Journal of Physics D: Applied Physics. 47:295301
Variously shaped shells were fabricated from strained ZnTe/CdTe/CdHgTe/HgTe/CdHgTe heterofilms that contained a HgTe quantum well populated simultaneously with electrons and holes. The radius of curvature of formed tubes proved to be 12??m and the pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9673c8bcffd35587f7335c9e9202f081
https://doi.org/10.1088/0022-3727/47/29/295301
https://doi.org/10.1088/0022-3727/47/29/295301
Publikováno v:
Journal of Physics D: Applied Physics. 44:365104
Conducting InAs/AlSb/GaSb shells of curvature radius ∼10 µm are fabricated on GaSb (1 0 0) substrates. In the InAs quantum well, the shells are shown to contain a two-dimensional electron gas. Controlled tuning of the curvature of the formed shell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b50f72a20d19ec5ac2c51b5317ac93c8
https://doi.org/10.1088/0022-3727/44/36/365104
https://doi.org/10.1088/0022-3727/44/36/365104