Zobrazeno 1 - 10
of 19
pro vyhledávání: '"S. V. Lotkhov"'
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 54:666-669
A capacitance standard based on the definition of capacitance C=Ne/U is realized if a capacitor is charged with a known number N of electrons (e is the elementary charge), and the voltage U across the capacitor is measured . If U is measured by means
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3885ba22da4db2796f0e8052a3c808dd
https://doi.org/10.1109/tim.2004.843075
https://doi.org/10.1109/tim.2004.843075
Publikováno v:
Physical Review B. 59:6487-6498
The resistive anomaly, an increase of sample resistance above the normal state value at the top of the superconducting transition, has been studied experimentally in various aluminum nanostructures. The effect is not absolutely reproducible being dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eceb801b6fa7715d0229d4ef5832b3f
https://doi.org/10.1103/physrevb.59.6487
https://doi.org/10.1103/physrevb.59.6487
Publikováno v:
Journal of Experimental and Theoretical Physics. 84:190-196
A nanostructure based on a uniform one-dimensional array of ultrasmall tunnel junctions (a single-electron trap) characterized by an ability to maintain an excess charge of several electrons in an island is fabricated and investigated. Changes in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c4a43f31cff373fe8431594240dcab0
https://doi.org/10.1134/1.558147
https://doi.org/10.1134/1.558147
Autor:
Alexander B. Zorin, S. V. Lotkhov
A single-electron trap built with two Superconductor (S) - Insulator (I) - Normal (N) metal tunnel junctions and coupled to a readout SINIS-type single-electron transistor A (SET A) was studied in a photon detection regime. As a source of photon irra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9d6fd054698c3e0180e6c04d9f8c118
Autor:
S. V. Lotkhov, Alexander B. Zorin, Olli-Pentti Saira, Jukka P. Pekola, Antti Manninen, Antti Kemppinen
Publikováno v:
Kemppinen, A, Lotkhov, S V, Saira, O-P, Zorin, A B, Pekola, J P & Manninen, A J 2011, ' Long hold times in a two-junction electron trap ', Applied Physics Letters, vol. 99, no. 14, 142106 . https://doi.org/10.1063/1.3647557
The hold time $\tau$ of a single-electron trap is shown to increase significantly due to suppression of environmentally assisted tunneling events. Using two rf-tight radiation shields instead of a single one, we demonstrate increase of $\tau$ by a fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99ba06c82f474ce363cc9f7d95f0f9c3
Publikováno v:
Applied Physics Letters. 78:946-948
We fabricated and tested the single electron R-pump, i.e. a three-junction Al circuit with on-chip Cr resistors. We show that due to the presence of the resistors (R > h/e^2 = 25.8 kOhm), the accuracy of electron transfer in the R-pump can approach t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b53fb63a9388cfb12854eec6ce80f9f
https://doi.org/10.1063/1.1347017
https://doi.org/10.1063/1.1347017
Publikováno v:
Lotkhov, S V, Kemppinen, A, Kafanov, S, Pekola, J P & Zorin, A B 2009, ' Pumping properties of the hybrid single-electron transistor in dissipative environment ', Applied Physics Letters, vol. 95, no. 11 . https://doi.org/10.1063/1.3227839
Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrOx with a sum resistance R=80kOhm were placed adjacent to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea2d450813d8bc5e453cbba0689c805f
https://aaltodoc.aalto.fi/handle/123456789/16098
https://aaltodoc.aalto.fi/handle/123456789/16098
The dc transport properties of long arrays of small Al Josephson junctions, biased through on-chip Cr resistors, are studied. The IV-characteristics show a large Coulomb threshold for current as well as negative-slope regions indicating the regime of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88e620f4c5831ddebebfc9d337e198f1
Publikováno v:
Physics-Uspekhi. 40:542-544
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb6532266d4f43c1ef57a57733201480
https://doi.org/10.1070/pu1997v040n05abeh001569
https://doi.org/10.1070/pu1997v040n05abeh001569
We fabricated and tested the single electron R-pump, i.e. a three-junction Al circuit with on-chip Cr resistors. We show that due to the presence of the resistors (R > h/e^2 = 25.8 kOhm), the accuracy of electron transfer in the R-pump can approach t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c620d324412a3d82fe40419c3ad0ff4