Zobrazeno 1 - 10
of 30
pro vyhledávání: '"S. V. Gastev"'
Autor:
E. Velichko, S. V. Gastev, V. Ukleev, B. B. Krichevtsov, Yu. Chetverikov, S. V. Grigoriev, Reda Moubah, N. A. Kulesh, D. A. Baranov
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 28:3571-3577
We investigate the magnetic anisotropy and domain structure of amorphous Tb (x) Co(1-x) films grown in external in-plane magnetic field by high-frequency ion sputtering. Films with different thickn ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3be70ce232fc1e1abe75784bba19b505
https://doi.org/10.1007/s10948-015-3172-9
https://doi.org/10.1007/s10948-015-3172-9
Autor:
N. S. Sokolov, A. K. Kaveev, B. B. Krichevtsov, Mikhail P. Volkov, S. V. Gastev, V. E. Bursian, Sergey M. Suturin
Publikováno v:
Technical Physics Letters. 42:1156-1158
Laser molecular-beam epitaxy has been employed to obtain layers of yttrium-iron garnet (YIG) Y3Fe5O12 on gallium nitride substrates. It was found that there exists a polycrystalline YIG phase without admixtures of other structural phases. A magnetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::444f44579baeadd45e968bb9524e4410
https://doi.org/10.1134/s1063785016120075
https://doi.org/10.1134/s1063785016120075
Publikováno v:
Physics of the Solid State. 51:118-126
The Co/CaF2/Si(001) heterostructures with the corrugated (110) surface of the CaF2 buffer layer have been grown by molecular beam epitaxy. The structures are nanoparticle arrays of single-crystal Co, mostly of the cubic fcc modification. The behavior
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87bc8b1fc013fcdfe5574a27c6005f14
https://doi.org/10.1134/s1063783409010156
https://doi.org/10.1134/s1063783409010156
Publikováno v:
Physics of the Solid State. 51:44-49
The optical transitions 5D0, 1 → 7FJ (J = 0, 1, ..., 6) of Eu3+ cubic centers in the CaF2 single crystal are investigated using combined excitation and emission spectroscopy at different time delays after the excitation pulse. The energies of the S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a69e76948b226fdb617caf11bf07e584
https://doi.org/10.1134/s1063783409010041
https://doi.org/10.1134/s1063783409010041
Publikováno v:
Journal of Alloys and Compounds. 451:84-87
Combined excitation–emission spectroscopy was carried out to study Eu 3+ centers in CaF 2 :Eu–CdF 2 superlattices. Two distinctive centers were observed and assigned as remote (R) and interface (I). The energy level of the R center appeared to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f54c0b65b548b2239dd4733b97dbab21
https://doi.org/10.1016/j.jallcom.2007.04.179
https://doi.org/10.1016/j.jallcom.2007.04.179
Publikováno v:
Journal of Crystal Growth. 268:536-542
Laser spectroscopy technique has been applied for studies of MnF 2 and ZnF 2 layers grown by molecular beam epitaxy on silicon substrates with the use of CaF 2 buffer layer. The films were doped during the growth with samarium either from SmF 3 molec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01a0f65213244c0ed6c6326ea7b78bc9
https://doi.org/10.1016/j.jcrysgro.2004.04.087
https://doi.org/10.1016/j.jcrysgro.2004.04.087
Publikováno v:
Journal of Luminescence. 108:25-30
We describe recent studies of epitaxially grown fluoride thin films aimed at isolating distinct crystalline phases present in the films. The MnF2 and ZnF2 films were grown on silicon wafers with a CaF2 buffer layer. Using excitation photoluminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a2486af81b747da0ede0c2d571d343f
https://doi.org/10.1016/j.jlumin.2004.01.005
https://doi.org/10.1016/j.jlumin.2004.01.005
Autor:
V. B. Shmagin, A. M. Emel’yanov, Boris A. Andreev, S. V. Gastev, Nikolai A. Sobolev, Z. F. Krasilnik
Publikováno v:
Semiconductors. 37:1100-1103
The effective cross section for photoluminescence (PL) excitation and lifetime of erbium ions in an excited state have been determined in Si:Er/Si/Si:Er/Si.../Si structures fabricated by sublimation molecular beam epitaxy. The obtained results show t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a1e76c9a2c8280689bf3b514158ef4b
https://doi.org/10.1134/1.1610127
https://doi.org/10.1134/1.1610127
Publikováno v:
Physics of the Solid State. 44:1445-1449
The nonstationary behavior of Eu2+ and Sm2+ photoluminescence in continuously optically pumped CaF2:RE2+-CdF2superlattices was considered. The transient character of the photoluminescence is due to spontaneous electron tunneling from the excited 4f5d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8182b48ae05d341d0ae232103c30b299
https://doi.org/10.1134/1.1501334
https://doi.org/10.1134/1.1501334
Autor:
N. Asli, Horst Zimmermann, A. F. Shulekin, I. V. Grekhov, Stanislav Tyaginov, S. V. Gastev, P. Seegebrecht, M.I. Vexler
Publikováno v:
Materials Science in Semiconductor Processing. 3:539-543
This paper contains a description of a procedure for determining the rates of photon generation by hot electrons in silicon. The algorithm proposed presumes the mathematical processing of experimental radiation spectra of forward-biased MOS tunnel st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a93e8e888b1ef6664fe2c2bd34eda01
https://doi.org/10.1016/s1369-8001(00)00081-0
https://doi.org/10.1016/s1369-8001(00)00081-0