Výsledky vyhledávání - "S. V. Danylyuk"

Interaction of sub-terahertz radiation with low-doped grating-based AlGaN/GaN plasmonic structures. Time-domain spectroscopy measurements and electrodynamic modeling

Autor: S. Brose, Yu M. Lyaschuk, Svetlana Vitusevich, V. A. Kochelap, Luca Varani, Dominique Coquillat, V. V. Korotyeyev, S. V. Danylyuk

Publikováno v: Semiconductor physics, quantum electronics & optoelectronics 22(2), 237-251 (2019). doi:10.15407/spqeo22.02.237
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS OPTOELECTRONICS
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS OPTOELECTRONICS, 2019, 22 (2), pp.237-251. ⟨10.15407/spqeo22.02.237⟩
Semiconductor physics, quantum electronics & optoelectronics : SQO 22(2), 237-251 (2019). doi:10.15407/spqeo22.02.237
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 22, Iss 2, Pp 237-251 (2019)

Semiconductor physics, quantum electronics & optoelectronics : SQO 22(2), 237-251 (2019). doi:10.15407/spqeo22.02.237
Published by Inst. of Semiconductor Physics, Kyiv

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::969c8394b84ba587a8afe5bdd6c67ec0
https://juser.fz-juelich.de/record/865352

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Aluminium nitride–niobium multilayers and free-standing structures for MEMS

Autor: Norbert Klein, G. Pickartz, E. Hollmann, G. Panaitov, Alexander Belyaev, R. Ott, Svetlana Vitusevich, S. V. Danylyuk

Publikováno v: Thin Solid Films. 515:489-492

In this article we investigate aluminium nitride–niobium thin films sputtered on Si wafers and free-standing structures made of these layers. The quality of the films is characterized by Rutherford backscattering (RBS), X-ray diffraction and time-o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bb522eb142a021f4b27ca8577bd6eb77
https://doi.org/10.1016/j.tsf.2005.12.276

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Capacitance characterization of AlN/GaN double‐barrier resonant tunnelling diodes

Autor: S. V. Danylyuk, Hans Lüth, A. M. Kurakin, Norbert Klein, Svetlana Vitusevich, A. V. Naumov, Sergei V. Novikov, Alexander Belyaev, C. T. Foxon

Publikováno v: physica status solidi c. 3:2265-2269

We report on the electrical characterization of AlN/GaN/AlN double-barrier resonant tunnelling diodes (RTDs) using steady-state current-voltage and capacitance-voltage (C-V) characteristics in a wide frequency range with 2 kHz steps. The C-V characte

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::22c097683f4e214f57d8ecd27d5fb535
https://doi.org/10.1002/pssc.200565156

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Low‐frequency noise in AlGaN/GaN HEMT structures with AlN thin film layer

Autor: Svetlana Vitusevich, Norbert Klein, S. V. Danylyuk, O. A. Antoniuk, A. M. Kurakin, Mykhaylo Petrychuk, Alexander Belyaev

Publikováno v: physica status solidi c. 3:2329-2332

Low-frequency noise in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures with additional AlN thin barrier layer is investigated. Transmission line model structures with different lengths of the conducting channel formed by polarizat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aadafb26b87374edc9f13fdc81752bd4
https://doi.org/10.1002/pssc.200565138

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Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3substrates

Autor: B. A. Danilchenko, Alexander Belyaev, Norbert Klein, Svetlana Vitusevich, S.E. Zelensky, S. V. Danylyuk, Hans Lüth, V. A. Kochelap, E. Drok

Publikováno v: physica status solidi (b). 243:1529-1532

The energy relaxation rate for hot electrons in AlGaN/GaN heterostructures was measured over the temperature range 4.2-300 K. Samples grown on sapphire and 4H-SiC substrates were studied. The most important result is that the hot carrier energy dissi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5952534e3304c00e707c12ec4cfd4ef7
https://doi.org/10.1002/pssb.200565445

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TRANSPORT AND NOISE FEATURES IN AlGaN/GaN FIELD EFFECT TRANSISTOR WITH NANOMETER-SCALING GATE LENGTH

Autor: Alexander Belyaev, Mykhaylo Petrychuk, Hans Lüth, S. V. Danylyuk, Nigel Klein, Svetlana Vitusevich, A. M. Kurakin

Publikováno v: International Journal of Nanoscience. :1001-1006

The study of low frequency noise in nanoscale gate HEMT structures (L SD /L G >10) has been carried out. Deviation from 1/f dependence has been observed in extended range of frequency and one becomes more pronounced with increase of gate voltage. It

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ef73a9d277e50bdab13387f19d687b5d
https://doi.org/10.1142/s0219581x05003978

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Phase noise study of AlGaN/GaN HEMT X‐band oscillator

Autor: L.F. Eastman, James R. Shealy, Nigel Klein, V. Tilak, S. V. Danylyuk, Svetlana Vitusevich, V. Kaper

Publikováno v: physica status solidi (c). 2:2615-2618

AlGaN/GaN high electron mobility transistor (HEMT) heterostructures were investigated by noise spectral density measurements. The heterostructure layers are grown without intentionally doping the barrier material and two-dimensional gas appears at th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e2a8cd92ce2ee77cb60b8938a330e43c
https://doi.org/10.1002/pssc.200461457

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Influence of surface passivation on low-frequency noise properties of AlGaN/GaN high electron mobility transistor structures

Autor: Nigel Klein, A. M. Kurakin, Svetlana Vitusevich, Alexander Belyaev, Mykhaylo Petrychuk, S. V. Danylyuk

Publikováno v: physica status solidi (a). 202:816-819

We investigated low-frequency noise in passivated and nonpassivated AlGaN/GaN high electron mobility transistor (HEMT) heterostructures grown on SiC substrate. The heterostructure layers are grown without intentionally doping the barrier material and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::75aebe8cd4bb261cf51cbbb0c49cbd8b
https://doi.org/10.1002/pssa.200461461

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Power and temperature dependence of low frequency noise in AlGaN∕GaN transmission line model structures

Autor: S. V. Danylyuk, Svetlana Vitusevich, Nigel Klein, Mykhaylo Petrychuk, Alexander Belyaev

Publikováno v: Journal of applied physics 96, 5625-5630 (2004). doi:10.1063/1.1805719

The low-frequency noise in AlGaN/GaN transmission line model structures has been investigated for a wide range of ambient temperatures and dissipated powers. A deviation of low-frequency noise from a 1/f dependence has been observed upon increasing t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14acf5b96021622a22fb7b3e88798c34
https://doi.org/10.1063/1.1805719

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LOW FREQUENCY NOISE PARAMETERS IN AN AlGaN/GaN HETEROSTRUCTURE WITH 33% AND 75% Al MOLE FRACTION

Autor: Norbert Klein, Lester F. Eastman, Alexander Belyaev, M. V. Petrychuk, Svetlana Vitusevich, S. V. Danylyuk, A. Vertiatchikh

Publikováno v: International Journal of High Speed Electronics and Systems. 14:762-768

Transport and low frequency noise properties of undoped AlGaN/GaN high electron mobility transistor (HEMT) heterostructures with 33% and 75% Al mole fractions in the ohmic and non-linear regimes of applied voltages are studied. In contrast to the low

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f04db15c3d6d576f4f708ad6e29a6077
https://doi.org/10.1142/s0129156404002806

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