Zobrazeno 1 - 2
of 2
pro vyhledávání: '"S. V. Bytkin"'
Publikováno v:
Russian Microelectronics. 43:546-551
The characteristics of low-power and power thyristors based on dislocation-free single crystals of germanium-doped silicon in the range of concentrations N Ge ∼ (0.05–1.5) × 1020 cm−3 are presented. Using the methods of processing of the exper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::304363b88778c72d996ec3bcbc80f539
https://doi.org/10.1134/s1063739714080046
https://doi.org/10.1134/s1063739714080046
Autor:
Yu.F. Lonin, М. В. Avramenko, А.G. Ponomarev, V. F. Кlepikov, S. E. Donets, V. Т. Uvarov, О. О. Isaenko, S. V. Bytkin, V.V. Lytvynenko, О. А. Startsev
Publikováno v:
Journal of Nano- and Electronic Physics. 9:04013-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e7e511a50d3a5c65e608438790facab
https://doi.org/10.21272/jnep.9(4).04013
https://doi.org/10.21272/jnep.9(4).04013