Zobrazeno 1 - 6
of 6
pro vyhledávání: '"S. V. Bytkin"'
Publikováno v:
Russian Microelectronics. 43:546-551
The characteristics of low-power and power thyristors based on dislocation-free single crystals of germanium-doped silicon in the range of concentrations N Ge ∼ (0.05–1.5) × 1020 cm−3 are presented. Using the methods of processing of the exper
Autor:
Yu.F. Lonin, М. В. Avramenko, А.G. Ponomarev, V. F. Кlepikov, S. E. Donets, V. Т. Uvarov, О. О. Isaenko, S. V. Bytkin, V.V. Lytvynenko, О. А. Startsev
Publikováno v:
Journal of Nano- and Electronic Physics. 9:04013-1
Autor:
Talanin, V. I.1 (AUTHOR) v.i.talanin@mail.ru, Talanin, I. E.1 (AUTHOR)
Publikováno v:
Crystallography Reports. Jul2019, Vol. 64 Issue 4, p581-585. 5p.
Publikováno v:
Russian Microelectronics; Dec2014, Vol. 43 Issue 8, p546-551, 6p
Autor:
Bytkin, S.V.
Publikováno v:
RADECS 97 Fourth European Conference on Radiation & its Effects on Components & Systems (Cat No97TH8294); 1997, p141-146, 6p
Publikováno v:
RADECS 97 Fourth European Conference on Radiation & its Effects on Components & Systems (Cat No97TH8294); 1997, pi-i, 1p