Zobrazeno 1 - 10
of 12
pro vyhledávání: '"S. V. Bilichuk"'
Autor:
M. N. Solovan, Viktor V. Brus, S. V. Bilichuk, T. T. Kovalyuk, A. I. Mostovoi, Pavlo D. Maryanchuk, Eduard V. Maistruk, I. G. Orletskii, Federico Pinna
Publikováno v:
Physics of the Solid State. 59:1643-1647
Results of the study of structural and optical properties of Cu2ZnSn(S,Se)4 thin films obtained by sulfitation (selenization) of Cu2ZnSn films which were sputtered by target direct current magnetron sputtering using a stoichiometric Cu2ZnSn (99.99%)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c08e9cb79e7a9635792cfe54929d48dc
https://doi.org/10.1134/s1063783417080261
https://doi.org/10.1134/s1063783417080261
Publikováno v:
Semiconductors. 51:1041-1043
The parameters of impurity levels in Hg3In2Te6 samples are studied using the temperature dependences of the electron concentration n(T) and the Fermi-level energy E F(T). The dependences n(T) and E F(T) are obtained from data on the Hall coefficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7136b8dc5be5d1fc2336612db1fa125
https://doi.org/10.1134/s1063782617080061
https://doi.org/10.1134/s1063782617080061
Autor:
S. M. Chupyra, S. V. Bilichuk, O. G. Grushka, O. M. Mysliuk, A. I. Savchuk, V. V. Shlemkevych
Publikováno v:
Semiconductors. 48:1271-1274
The results of studying the electrical and photoelectric properties of Hg3In2Te6 bulk crystals with stoichiometric composition and of Hg3(1 + δ)In2(1 − δ)Te6 crystals with a deviation from the stoichiometric composition of δ = ±0.06 are reporte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ed5b92cec1f42920803e58390c9ad3
https://doi.org/10.1134/s1063782614100091
https://doi.org/10.1134/s1063782614100091
Publikováno v:
Semiconductors. 49:892-894
Optical and photoelectric measurements reveal that doping with iron leads to the formation of a deep level at Ec–0.69 eV in Hg3In2Te6 crystals. When light is absorbed by Fe2+ impurity centers, both electronic transitions of the impurity-level–con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc08e413d30a18bcecaebf2a652032d1
https://doi.org/10.1134/s106378261507009x
https://doi.org/10.1134/s106378261507009x
Autor:
P. N. Gorley, A. I. Savchuk, V. V. Khomyak, V. I. Fediv, Alessio Perrone, S. V. Bilichuk, A.G. Voloshchuk, I.D. Stolyarchuk
Publikováno v:
Materials Science and Engineering: C. 23:753-756
The technique of pulsed laser deposition and colloidal chemistry methods have been applied for synthesis of semimagnetic semiconductor Cd 1− x Mn x Te nanocrystals embedded in dielectric matrix. The performed analysis suggests a narrower size distr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee08b73c21aad0c6292ecea16000192c
https://doi.org/10.1016/j.msec.2003.09.092
https://doi.org/10.1016/j.msec.2003.09.092
Publikováno v:
Semiconductors. 47:1141-1144
The effect of Mn impurities on the properties of Hg3In2Te6 crystals is studied by electrical and optical measurements. It is shown that, despite the high dopant concentration (1 × 1019 cm−3), the electron concentration remains the same as that in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97a52206ee28478ad2dcdfcb9a175ff0
https://doi.org/10.1134/s1063782613090078
https://doi.org/10.1134/s1063782613090078
Publikováno v:
Materials Science and Engineering: B. 118:160-163
The authors investigated the influence of technological conditions on the properties of thin films of tin dioxide (SnO2) deposited with reactive magnetron sputtering in Ar–O2 carrier gas mixture. The optimal technological regimes were determined to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e57c2651f6c4cfd21e9f44d29963efee
https://doi.org/10.1016/j.mseb.2004.12.026
https://doi.org/10.1016/j.mseb.2004.12.026
Autor:
V. T. Maslyuk, S. M. Chupyra, I. I. Zabolotskiy, O. M. Mysliuk, O. G. Grushka, S. V. Bilichuk
Publikováno v:
Semiconductors. 46:312-314
The results of studying the electrical properties of Hg3In2Te6 crystals irradiated with electrons with the energy E e = 18 MeV and the dose D = 4 × 1016 cm−2 are reported. It is shown that, irrespective of the charge-carrier concentration in the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::059f08c5bf007c980b98e56d6ecb125e
https://doi.org/10.1134/s1063782612030128
https://doi.org/10.1134/s1063782612030128
Publikováno v:
Semiconductors. 45:49-51
The effect of electric field and temperature on the conductivity of bulk Hg3In2Te6 crystals is investigated. It is shown that the I–V characteristics in high electric fields are of the S type with the effect of switching into a low-resistance state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fadb2ef5d21049f2cbb6b480c4af17dd
https://doi.org/10.1134/s106378261101009x
https://doi.org/10.1134/s106378261101009x
Autor:
P. N. Gorley, S. V. Bilichuk, A. I. Savchuk, K.S Ulyanytsky, Alessio Perrone, Petr I. Nikitin, V. V. Khomyak
The Zn 1− x Mn x O ( x 0.9 Mn 0.1 O has been revealed and its origin is discussed. Magnetic susceptibility as a function of temperature for ceramic samples demonstrates Curie–Weiss behavior. The observed negative sign of Faraday rotation angle, i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55b114d73d2676512fbcb992ab62da86
https://hdl.handle.net/11587/331795
https://hdl.handle.net/11587/331795
