Zobrazeno 1 - 10
of 13
pro vyhledávání: '"S. V. Belaya"'
Autor:
Irina V. Yushina, I. V. Korolkov, E. A. Maksimovskii, S. V. Belaya, V. V. Bakovets, M. I. Rakhmanova, V. R. Shayapov
Publikováno v:
Inorganic Materials. 56:836-846
(Gd1 – xTbx)2O3 (x = 0.04–0.22) films 115 to 150 nm in thickness have been grown on Si and SiO2 substrates by metal organic chemical vapor deposition (MOCVD) using Ln(dpm)3 precursors. After annealing in air at 800°C for removing carbon-containi
Autor:
V. R. Shayapov, Alexandra Shapovalova, Mariana Rakhmanova, S. V. Belaya, Eugenii Maksimovskii, Igor P. Asanov, Ilya V. Korolkov
Publikováno v:
Journal of Luminescence. 233:117842
Autor:
Irina V. Yushina, E. A. Maksimovskii, P. A. Stabnikov, I. V. Korolkov, M. I. Rakhmanova, S. V. Belaya, V. V. Bakovets
Publikováno v:
Inorganic Materials. 53:613-618
(Gd x Y1–x )2O3:Eu3+ (11–14 at % Eu) phosphor films ≤150 nm in thickness have been grown by Ln(dpm)3 chemical vapor deposition on Si(100) substrates, and the chemical and phase compositions of the films have been determined. We have studied pho
Autor:
I. V. Korol’kov, Olga V. Antonova, T. D. Pivovarova, M.I. Rakhmanova, S. V. Belaya, I. P. Dolgovesova, V. V. Bakovets
Publikováno v:
Journal of Luminescence. 215:116633
Publikováno v:
Chemical Vapor Deposition. 21:150-155
Terbium oxide films are deposited on silicon substrates by metal-organic (MO)CVD from a vapor of Tb(thd)3 in argon. Terbium sesquioxide (C-form) is realized in this process. Annealing of the films in air at 800 °C, followed by cooling in air, leads
Publikováno v:
Inorganic Materials. 50:576-581
We have studied the kinetics of terbium oxide chemical vapor deposition using the Tb(dpm)3 com� plex. At substrate temperatures in the range 465-560°C, films ranging in thickness from 25 to 360 nm have been obtained. At precursor partial pressures
Autor:
Ilya V. Korolkov, M. N. Lobzareva, S. V. Belaya, S. V. Koshcheev, Andrei I. Boronin, V. V. Bakovets, P. A. Stabnikov
Publikováno v:
Inorganic Materials. 50:379-386
Terbium oxide films have been grown on Si(111) substrates by decomposition of Tb(dpm)3 vapor in argon flow at Tb(dpm)3 source temperatures of 170 and 190°C and substrate temperatures from 470 to 550°C. The films have been annealed in air at tempera
Publikováno v:
Journal of Alloys and Compounds. 419:149-154
The variety of morphology, chemical composition and density of holmium polysulfide crystals grown from the flux in different as well as in the same experiments is observed. It was found that the crystals of different habits have the monoclinic struct
Publikováno v:
Journal of Structural Chemistry. 44:1011-1017
A series of experiments have been carried out to synthesize holmium polysulfides at temperatures from 600 to 840°C and sulfur vapor pressures of (2.1, 6.5, 16.7)a105 Pa. Polysulfide crystals sized up to 2 mm and micron-sized powders were investigate
Publikováno v:
Journal of Alloys and Compounds. :26-33
Crystals of holmium polysulfides, up to 3×2×1.5 mm in size, were grown by spontaneous crystallization from melted KI. A diversity in morphology was observed from thin transparent plates to polyhedrons with mirror-like surfaces. For crystals of diff