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pro vyhledávání: '"S. U. Irgashev"'
Autor:
A. S. Rysbaev, S. U. Irgashev, A. S. Kasimov, D. Sh. Juraeva, J. B. Khujaniyazov, M. I. Khudoyberdieva
Publikováno v:
Eurasian Journal of Physics and Functional Materials, Vol 4, Iss 1, Pp 50-60 (2021)
The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nan
Externí odkaz:
https://doaj.org/article/23bc6ed49faa4a2c8750aef82deb0b81
