Femtosecond differential transmission measurements on low temperature GaAs metal–semiconductor–metal structures

Autor: Peter Kiesel, Gottfried H. Döhler, Ulrich D. Keil, Jørn Märcher Hvam, S. Tautz, S. U. Dankowski

Publikováno v: Keil, U D F, Hvam, J M, Tautz, S, Dankowski, S U, Kiesel, P & Döhler, G H 1997, ' Femtosecond differential transmission measurements on low temperature GaAs metal-semiconductor-metal structures ', Applied Physics Letters, vol. 70, no. 1, pp. 72-74 . https://doi.org/10.1063/1.119310

We report on differential transmission measurements on low temperature grown (LT)-GaAs with and without applied electrical fields at different wavelengths. Electrical fields up to 100 kV/cm can be applied via an interdigitated contact structure to ou

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::350b2fd7ad435be607f086ead3d9d0b4
https://doi.org/10.1063/1.119310

Dynamics Of The Electroabsorption In MSM-Modulators based on Low Temperature Grown GaAs

Autor: Ulrich D. Keil, S. U. Dankowski, S. Tautz, Gottfried H. Döhler, M. Krause, P. Kiesel, H. Seichter

Publikováno v: International Topical Meeting on Microwave Photonics.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7dd76d5e702e1bb189433759996ca035
https://doi.org/10.1109/mwp.1997.740254

Field screening and bandfilling effects in low temperature GaAs MSM structures observed by differential transmission experiments

Autor: S. U. Dankowski, H. Seichter, Peter Kiesel, Ulrich D. Keil, M. Ruff, Gottfried H. Döhler, D. Streb, U. Hilburger, S. Tautz

Publikováno v: CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a5a17bd88eb176fd9347e8308ba0e13f
https://doi.org/10.1109/cleo.1997.603041

Polarization dependence of the electroabsorption in low‐temperature grown GaAs for above band‐gap energies

Autor: Peter Kiesel, M. Ruff, Gottfried H. Döhler, S. Tautz, Ulrich D. Keil, Michael Kneissl, B. Knüpfer, D. Streb, Norbert Linder, S. U. Dankowski

Publikováno v: Ruff, M, Streb, D, Dankowski, S U, Tautz, S, Kiesel, P, Knüpfer, B, Kneissl, M, Linder, N, Döhler, G H & Keil, U D F 1996, ' Polarization dependence of the electroabsorption in low-temperature grown GaAs for above band-gap energies ', Applied Physics Letters, vol. 68, no. 21, pp. 2968-2970 . https://doi.org/10.1063/1.116371

We have measured the electroabsorption in low-temperature grown GaAs by performing room-temperature transmission experiments in the spectral range from 1.3 to 1.9 eV for different electric fields induced by a voltage applied to a metal-semiconductor-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ea70f60630c3214ceea53de7abd8c81
https://doi.org/10.1063/1.116371

Polarization-insensitive high-contrast GaAs/AlGaAs waveguide modulator based on the Franz-Keldysh effect

Autor: Peter Kiesel, Norbert Linder, G. Weimann, Michael Kneissl, S. U. Dankowski, B. Knüpfer, Gottfried H. Döhler

Publikováno v: IEEE Photonics Technology Letters. 5:1386-1388

A GaAs/AlGaAs p-i-n double heterostructure waveguide modulator based on the Franz-Keldysh effect is reported. On/off ratios up to 40 dB are obtained over a broad range of wavelengths (>or=32 dB between 905 nm and 960 nm), while absorption loss in the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1fb36cead490eb87bde1ec09b2054a1b
https://doi.org/10.1109/68.262549