Zobrazeno 1 - 10
of 168
pro vyhledávání: '"S. U. Campisano"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 147:56-61
Si/GexSi1−x heterojunction n-p-n bipolar transistors (HBT) with a double polycrystalline silicon (polysilicon) self-aligned structure were fabricated by using high dose Ge implantation for the formation of the Si/GexSi1−x heterostructure and As a
Autor:
Salvatore Lombardo, S. U. Campisano
Publikováno v:
Materials Science and Engineering: R: Reports. 17:281-336
We have investigated the relationship between microstructure and electrical conductivity in semi-insulating polycrystalline silicon (SIPOS) with oxygen concentrations in the 2–35 at.% range and the effect of doping with boron, phosphorus, arsenic a
Autor:
Vito Raineri, G. La Rosa, R. Portoghese, S. U. Campisano, Salvatore Lombardo, A. Pinto, P. Ward
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 120:169-172
Epitaxial Si Ge x Si 1 − x heterojunctions were formed by high dose Ge ion implantation in Si followed by rapid thermal annealing at 1000°C for 10 s. This technique was adopted to fabricate Si Ge x Si 1 − x heterojunction n-p-n bipolar transisto
Publikováno v:
Materials Chemistry and Physics. 46:156-160
Epitaxial Si/GexSi1-x heterojunctions were formed by high dose Ge ion implantation in Si followed by solid phase epitaxy. This technique was adopted for fabricating Si/GexSi1-x heterojunction n-p-n bipolar transistors (HBT). We used a standard self-a
Autor:
A. Kazimirov, F. La Via, Vito Raineri, S. U. Campisano, S. Lagomarsino, K. Kyllesbech Larsen, Salvatore Lombardo
Publikováno v:
Journal of Applied Physics. 79:3456-3463
We have investigated electrical and structural characteristics of C coimplanted GexSi1−x layers formed by high dose Ge implantation in (100) Si followed by rapid thermal annealing at 1100 °C for 10 s. In the absence of C the layers, with Ge peak c
Autor:
S. U. Campisano, F. La Via, V. Privitera, A. Cacciato, Vito Raineri, Salvatore Lombardo, K. Kyllesbech Larsen
Publikováno v:
Scopus-Elsevier
We have investigated the electrical characteristics of p+–n Si junction diodes implanted with 300 keV C ions at fluences of 0.5 and 1×1015 cm−2 and annealed at 900 or 1100 °C. In all cases cross‐sectional transmission electron microscopy show
Publikováno v:
Journal of Applied Physics. 78:3727-3735
The gettering efficiency of copper and platinum by cavities formed in silicon after high dose helium implantation and thermal processing has been investigated. The formation of helium bubbles and their evolution into cavities has been investigated by
Publikováno v:
Journal of Applied Physics. 78:2642-2650
The photoluminescence of erbium‐doped semi‐insulating polycrystalline and amorphous silicon containing 30 at. % oxygen is studied. The films were deposited on single‐crystal Si substrates by chemical vapor deposition, implanted with 500 keV Er
Publikováno v:
Journal of Applied Physics. 77:6504-6510
Room‐temperature electroluminescence at 1.54 μm is demonstrated in erbium‐implanted oxygen‐doped silicon (27 at. % O), due to intra‐4f transitions of the Er3+. The luminescence is electrically stimulated by biasing metal‐(Si:O, Er)‐p+ si
Publikováno v:
Journal of The Electrochemical Society. 142:1601-1607
We have investigated the selective chemical etching of B-doped silicon in p+n and in p + p structures using an HF:HNO 3 mixture under illumination with ultraviolet light. The etching profiles were observed by transmission electron microscopy (TEM) an