Zobrazeno 1 - 10
of 18
pro vyhledávání: '"S. Turgis"'
Autor:
S. Turgis, D. Auvergne
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 17:1090-1098
We present in this paper a novel alternative for the internal power-dissipation estimation of CMOS structures. A first order macromodeling is developed, considering full submicronic additional effects such as input slew dependency of short-circuit cu
Publikováno v:
Microelectronic Engineering. 39:209-223
Designing in the deep submicronic range implies to manage trade off between speed and power. This paper presents an improved macro model for the delay and power dissipation of CMOS structures. This model is based on a simple but realistic MOS model t
Publikováno v:
Proceedings of IEEE Custom Integrated Circuits Conference - CICC '94.
We present the design of a real time parallel processor for classification adapted to image processing. We propose a geometric classification method by stress polytope training, allowing the use of a large number of parameters and ensuring a high dec
Publikováno v:
EDAC-ETC-EUROASIC
Summary form only given. The authors present the design of a real time parallel processor for classification adapted to image processing. They propose a geometric classification method allowing the use of a large number of parameters and ensuring a h
Publikováno v:
Proceedings European Design and Test Conference. ED & TC 97.
Publikováno v:
ISLPD: International Symposium on Low Power Design
ISLPD: International Symposium on Low Power Design, Apr 1995, Dana Point, CA, United States. pp.129-134, ⟨10.1145/224081.224104⟩
ISLPD
ISLPD: International Symposium on Low Power Design, Apr 1995, Dana Point, CA, United States. pp.129-134, ⟨10.1145/224081.224104⟩
ISLPD
International audience; For supply voltage standards such as Vdd > V TN + |V TP | short-circuit power dissipation significantly contributes to the total power dissipation in ICs. We propose a new alternative for the estimation of the short-circuit po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a10e95b8a079985520d4284c7a8b2589
https://hal-lirmm.ccsd.cnrs.fr/lirmm-00241153
https://hal-lirmm.ccsd.cnrs.fr/lirmm-00241153
Publikováno v:
Electronics Letters. 32:2070
The authors present an improved macro-model for the delay of CMOS inverters for a submicrometre process. This model includes input-to-output coupling capacitance, short circuit current and input slope effects. Validations are obtained by comparing si
Publikováno v:
Proceedings ED&TC European Design and Test Conference.
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Akademický článek
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